Multilayer heterostructures for application in OLEDs and photovoltaic devices

Patent metadata

Field	Value
Publication number	US-9780306-B2
Application number	US-201414557493-A
Country	US
Kind code	B2
Filing date	Dec 2, 2014
Priority date	Nov 28, 2007
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

First claim

The invention claimed is:

1. A method of making a supported polymer heterostructure comprising an abrupt or diffuse interface, the method comprising the steps of:
i) depositing on a substrate a first material and a phase control material and wherein the first material and the phase control material phase separate;
ii) removing of the phase control material by a selective solvent;
iii) crosslinking the remaining deposited first material; and
iv) depositing a further material on at least the crosslinked deposited first material to form the supported polymer heterostructure, wherein the supported polymer heterostructure is a phase separated nanostructure with a length scale between 10 nm and 1000 nm.

2. The method of claim 1 , wherein the first material is a polymer.

3. The method of claim 2 , wherein the polymer is radiatively crosslinked.

4. The method of claim 2 , wherein the polymer is thermally crosslinked.

5. The method of claim 1 , wherein the phase control material comprises at least one of; a low molecular weight polymer, an oligomer, a polyelectrolyte, an ionomer, a solvent which does not dissolve the polymer.

6. The method of claim 1 , comprising a subsequent phase separation step.

7. The method of claim 6 , wherein the subsequent phase separation is self-aligned to the first determined pattern.

8. The method of claim 1 , wherein the substrate is pre-patterned.

9. The method of claim 1 , comprising the further steps of incorporating the supported heterostructure in a semiconductor device.

10. The method according to claim 1 , wherein the device is a photovoltaic device.

11. The method according to claim 1 , wherein the device is a light-emitting diode.

Assignees

• Nat Univ Singapore

Inventors

• Ho Peter
• Chia Perq-Jon
• Chua Lay-Lay
• Png Rui-Qi
• Friend Richard Henry

Classifications

• H01L51/0003

  Electricity · mapped topic

• H01L51/0039

  Electricity · mapped topic

• H01L51/5012

  Electricity · mapped topic

• H01L51/0037

  Electricity · mapped topic

• Y02E10/549

  Organic PV cells · CPC title