Stabilized quantum dot structure and method of making a stabilized quantum dot structure

Patent metadata

Field	Value
Publication number	US-9780266-B2
Application number	US-201615196906-A
Country	US
Kind code	B2
Filing date	Jun 29, 2016
Priority date	Jun 30, 2015
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm 2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

First claim

The invention claimed is:

1. A stabilized quantum dot structure for use in a light emitting device, the stabilized quantum dot structure comprising:
a luminescent particle comprising one or more semiconductors;
a buffer layer overlying the luminescent particle, the buffer layer comprising an amorphous material; and
a barrier layer overlying the buffer layer, the barrier layer comprising oxygen, nitrogen and/or carbon.

2. The stabilized quantum dot structure of claim 1 , wherein the amorphous material is selected from the group consisting of amorphous silica, amorphous titania, amorphous carbon, amorphous alumina, amorphous silicon oxycarbide, or an amorphous aluminosilicate.

3. The stabilized quantum dot structure of claim 1 , wherein the barrier layer comprises an oxide, a carbide, a nitride, an oxynitride or an oxycarbide.

4. The stabilized quantum dot structure of claim 3 , wherein the barrier layer comprises an insulating oxide selected from the group consisting of: aluminum oxide, zirconium oxide and hafnium oxide.

5. The stabilized quantum dot structure of claim 3 , wherein the barrier layer comprises a semiconducting oxide selected from the group consisting of: zinc oxide, titanium dioxide, indium oxide, tin oxide, nickel oxide and copper oxide; or a conducting oxide selected from the group consisting of: indium-tin oxide, aluminum-doped zinc oxide, and gallium-doped zinc oxide.

6. The stabilized quantum dot structure of claim 3 , wherein the barrier layer comprises: a nitride selected from the group consisting of silicon nitride, aluminum nitride, boron nitride, and gallium nitride; or a carbide selected from the group consisting of: silicon carbide and boron carbide.

7. The stabilized quantum dot structure of claim 1 , wherein one or both of the buffer layer and the barrier layer are substantially transparent to visible light.

8. The stabilized quantum dot structure of claim 1 , wherein the buffer layer further comprises an ionic species selected from the group consisting of K and Na, the buffer layer being a treated buffer layer.

9. The stabilized quantum dot structure of claim 1 , wherein the buffer layer is a densified buffer layer comprising amorphous silica, an FTIR spectrum of the stabilized quantum dot structure exhibiting a peak intensity ratio R=I 1050 /I 3300 of at least about 35, where I 1050 is a peak intensity at about 1050 cm −1 and I 3300 is a peak intensity at about 3300 cm −1 .

10. The stabilized quantum dot structure of claim 1 , wherein the luminescent particle comprises a core-shell structure including a semiconducting core and one or more semiconducting shells overlying the semiconducting core.

11. The stabilized quantum dot structure of claim 1 , wherein each of the buffer layer and the barrier layer has a thickness of from about 2 nm to about 50 nm.

12. The stabilized quantum dot structure of claim 1 , wherein the luminescent particle has a size of about 100 nm or less.

13. The stabilized quantum dot structure of claim 1 exhibiting a quantum yield of at least about 0.7 when exposed to a blue light flux of 30 W/cm 2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

14. A light emitting device comprising a blue light emitting diode (LED) chip having a dominant wavelength of 425 nm to 475 nm in optical communication with a plurality of the stabilized quantum dot structures of claim 1 for down conversion of light emitted from the blue LED chip.

Assignees

• Cree Inc

Inventors

• Lotito Kenneth
• Gresback Ryan
• Fini Paul
• Ibbetson James
• Keller Bernd

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10H20/8508

  Package substrates, e.g. submounts · CPC title

• H10H20/8502

  Surface mount technology [SMT] type packages · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title