Method of preparing quantum dot layer, QLED display device having the quantum dot layer and method of preparing the same

Patent metadata

Field	Value
Publication number	US-9780257-B1
Application number	US-201615224234-A
Country	US
Kind code	B1
Filing date	Jul 29, 2016
Priority date	Mar 16, 2016
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A method of preparing a quantum dot layer, including: placing an anodic aluminum oxide sheet with a plurality of through holes on a substrate; dispersing quantum dots into the plurality of through holes of the anodic aluminum oxide sheet; and removing the anodic aluminum oxide sheet to form a quantum dot layer.

First claim

What is claimed is:

1. A method of preparing a quantum dot light emitting diode display device, comprising:
forming a hole transport layer;
placing an anodic aluminum oxide sheet with a plurality of through holes on the hole transport layer, wherein a diameter of each through hole is larger than a thickness of a partition wall between any two adjacent through holes;
dispersing quantum dots into the plurality of through holes of the anodic aluminum oxide sheet; and
removing the anodic aluminum oxide sheet to form a quantum dot layer on the hole transport layer.

2. The method according to claim 1 , before forming the hole transport layer, further comprising:
providing a substrate; and
forming an anode and a hole blocking layer on the substrate in that order.

3. The method according to claim 2 , after forming the quantum dot layer, further comprising:
forming an electron transport layer, an electron blocking layer and a cathode on the quantum dot layer in that order.

4. A method of preparing a quantum dot light emitting diode display device, comprising:
forming a hole transport layer;
forming a protective layer on the hole transport layer;
placing an anodic aluminum oxide sheet with a plurality of through holes on the protective layer, wherein a diameter of each through hole is larger than a thickness of a partition wall between any two adjacent through holes;
dispersing quantum dots into the plurality of through holes of the anodic aluminum oxide sheet; and
removing the anodic aluminum oxide sheet to form a quantum dot layer on the protective layer.

5. The method according to claim 4 , wherein, the protective layer is one selected from p-type doping protective layer, n-type doping protective layer and anisotropic conductive layer.

6. The method according to claim 4 , before forming the hole transport layer, further comprising:
providing a substrate; and
forming an anode and a hole blocking layer on the substrate in that order.

7. The method according to claim 6 , after forming the quantum dot layer, further comprising:
forming an electron transport layer, an electron blocking layer and a cathode on the quantum dot layer in that order.

8. A quantum dot light emitting diode display device, which is prepared by the method according to claim 7 .

9. The method according to claim 1 , wherein the anodic aluminum oxide sheet is removed by dissolution.

10. The method according to claim 9 , wherein the anodic aluminum oxide sheet is removed by being immersed in an acid or alkali solution of a low concentration.

11. The method according to claim 10 , wherein:
the low concentration comprises a concentration range of from 5 wt. % to 10 wt. %;
the acid solution is selected from hydrochloric acid solution or phosphoric acid solution; and
the alkali solution is NaOH solution.

12. The method according to claim 1 , wherein the anodic aluminum oxide sheet is prepared by using a method comprising:
S1. cleaning an aluminum sheet and placing the cleaned aluminum sheet into a first mixed solution to electropolish it;
S2. placing the electropolished aluminum sheet into oxalic acid solution to conduct a first anodic oxidation, so as to form a first sheet;
S3. placing the first sheet into a second mixed solution to conduct a water bath, so as to remove an aluminum oxide film formed on a first surface of the first sheet, and then placing the first sheet into oxalic acid solution to conduct a second anodic oxidation, so as to form a second sheet;
S4. placing a second surface of the second sheet, on which aluminum is not oxidized, into a saturated copper chloride solution to conduct a replacement reaction so as to remove the aluminum completely, to form a third sheet; and
S5. forming the through holes in the third sheet by using phosphoric acid to form the anodic aluminum oxide sheet.

13. The method according to claim 12 , wherein, in the step S1, the first mixed solution is prepared by mixing absolute ethanol and perchloric acid with 4 to 1:1 by volume, and the electropolishing is conducted at a voltage in a range of from 15V to 18V.

14. The method according to claim 12 , wherein, in the step S2, the oxalic acid solution has a concentration range of 0.3 mM to 1 mM, and the first anodic oxidation is conducted at a voltage in a range of from 40V to 50V and lasts for 3 to 4 hours.

15. The method according to claim 12 , wherein, in the step S3, the second mixed solution is prepared by mixing 1.8 wt. % chromic acid and 6 wt. % phosphoric acid.

16. The method according to claim 12 , wherein, in the step S3, the second anodic oxidation is conducted at a voltage in a range of from 20V to 50V and lasts for 20 minutes to 48 hours.

17. The method according to claim 12 , wherein, in the step S5, the phosphoric acid has a concentration range of 5 wt. % to 10 wt. %, and the through holes are formed within a time range of from 4 to 10 hours.

18. The method according to claim 12 , wherein, in the step S5, diameters of the through holes are controlled to be within a range of from 5 nm to 200 nm.

19. The method according to claim 1 , wherein, the quantum dots are dispersed into the plurality of through holes of the anodic aluminum oxide sheet by drop-in or spin-coating.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Xu Xiaona
• Yang Tian
• Tian Biao
• Kang Zhao
• Zhu Xiaoyan
• Chen Ning
• Zhou Xiang

Classifications

• H01L2933/0025

  Electricity · mapped topic

• H01L2933/0066

  Electricity · mapped topic

• H01L2933/0033

  Electricity · mapped topic

• H01L33/06 Primary

  Electricity · mapped topic

• H01L33/44

  Electricity · mapped topic