Method for manufacturing CZTS based thin film having dual band gap slope, method for manufacturing CZTS based solar cell having dual band gap slope and CZTS based solar cell thereof

Patent metadata

Field	Value
Publication number	US-9780246-B2
Application number	US-201314364879-A
Country	US
Kind code	B2
Filing date	Jun 19, 2013
Priority date	Jun 20, 2012
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu 2 ZnSnS 4 thin film layer; forming a Cu 2 ZnSn(S,Se) 4 thin film layer; and forming a Cu 2 ZnSnS 4 thin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

First claim

The invention claimed is:

1. A CZTS-based solar cell, comprising:
a back contact; and
a CZTS-based thin film layer formed on the back contact;
wherein the CZTS-based thin film layer comprises a first Cu 2 ZnSnS 4 thin film layer, a Cu 2 ZnSn(S,Se) 4 thin film layer, and a second Cu 2 ZnSnS 4 thin film layer which are sequentially formed, and a band gap energy of the Cu 2 ZnSn(S,Se) 4 thin film layer is lower than those of the first Cu 2 ZnSnS 4 thin film layer and the second Cu 2 ZnSnS 4 thin film layer.

2. The CZTS-based solar cell of claim 1 , wherein the Cu 2 ZnSn(S,Se) 4 thin film layer is thicker than the first Cu 2 ZnSnS 4 thin film layer and the second Cu 2 ZnSnS 4 thin film layer.

3. A method of manufacturing a CZTS-based thin film having a dual band gap slope, comprising:
forming a first Cu 2 ZnSnS 4 thin film layer;
forming a Cu 2 ZnSn(S,Se) 4 thin film layer on the first Cu 2 ZnSnS 4 thin film layer; and
forming a second Cu 2 ZnSnS 4 thin film layer on the Cu 2 ZnSn(S,Se) 4 thin film layer.

4. The method of claim 3 , wherein:
forming the first Cu 2 ZnSnS 4 thin film layer comprises:
synthesizing a precursor thin film layer comprising Cu, Zn and Sn; and
subjecting the precursor thin film layer to primary sulfurization;

forming the Cu 2 ZnSn(S,Se) 4 thin film layer comprises selenizing the sulfurized thin film layer; and
forming the second Cu 2 ZnSnS 4 thin film layer comprises subjecting the selenized thin film layer to secondary sulfurization.

5. The method of claim 4 , wherein the synthesizing the precursor thin film layer is performed using any one process selected from among co-evaporation, sputtering, electrodeposition, nanoparticle deposition and solution coating.

6. The method of claim 4 , wherein the primary sulfurization and the secondary sulfurization are performed by thermal treatment in an H 2 S atmosphere or injection of S into a thin film using a vacuum evaporation process.

7. The method of claim 4 , wherein the selenizing is performed by thermal treatment in an H 2 Se atmosphere or injection of Se into a thin film using a vacuum evaporation process.

8. The method of claim 3 , wherein:
forming the first Cu 2 ZnSnS 4 thin film layer comprises synthesizing a precursor thin film layer comprising Cu, Zn, Sn and S;
forming the Cu 2 ZnSn(S,Se) 4 thin film layer comprises selenizing the precursor thin film layer; and
forming the second Cu 2 ZnSnS 4 thin film layer comprises sulfurizing the selenized thin film layer.

9. The method of claim 8 , wherein the synthesizing the precursor thin film layer is performed using any one process selected from among co-evaporation, sputtering, electrodeposition, nanoparticle deposition and solution coating.

10. The method of claim 8 , wherein the selenizing is performed by thermal treatment in an H 2 Se atmosphere or injection of Se into a thin film using a vacuum evaporation process.

11. The method of claim 8 , wherein the sulfurizing is performed by thermal treatment in an H 2 S atmosphere or injection of S into a thin film using a vacuum evaporation process.

12. The method of claim 3 , wherein:
forming the first Cu 2 ZnSnS 4 thin film layer comprises:
synthesizing a first precursor thin film layer comprising Cu, Zn and Sn; and
subjecting the first precursor thin film layer to primary sulfurization;

forming the Cu 2 ZnSn(S,Se) 4 thin film layer comprises:
synthesizing a second precursor thin film layer comprising Cu, Zn and Sn on the sulfurized thin film layer; and
selenizing the second precursor thin film layer; and

forming the second Cu 2 ZnSnS 4 thin film layer comprises:
synthesizing a third precursor thin film layer comprising Cu, Zn and Sn on the selenized thin film layer; and
subjecting the third precursor thin film layer to secondary sulfurization.

13. The method of claim 12 , wherein the synthesizing the first to third precursor thin film layers is performed using any one process selected from among co-evaporation, sputtering, electrodeposition, nanoparticle deposition and solution coating.

14. The method of claim 12 , wherein the primary sulfurization and the secondary sulfurization are performed by thermal treatment in an H 2 S atmosphere or injection of S into a thin film using a vacuum evaporation process.

15. The method of claim 12 , wherein the selenizing is performed by thermal treatment in an H 2 Se atmosphere or injection of Se into a thin film using a vacuum evaporation process.

16. A method of manufacturing a CZTS-based solar cell having a dual band gap slope, comprising:
forming a back contact; and
forming a CZTS-based thin film layer, which comprise the steps of:
forming a first Cu 2 ZnSnS 4 thin film layer on the back contact;
forming a Cu 2 ZnSn(S,Se) 4 thin film layer on the first Cu 2 ZnSnS 4 thin film layer; and
forming a second Cu 2 ZnSnS 4 thin film layer on the Cu 2 ZnSn(S,Se) 4 thin film layer.

17. The method of claim 16 , wherein:
forming the first Cu 2 ZnSnS 4 thin film layer comprises:
synthesizing a precursor thin film layer comprising Cu, Zn and Sn; and
subjecting the precursor thin film layer to primary sulfurization;

forming the Cu 2 ZnSn(S,Se) 4 thin film layer comprises selenizing the sulfurized thin film layer; and
forming the second Cu 2 ZnSnS 4 thin film layer comprises subjecting the selenized thin film layer to secondary sulfurization.

18. The method of claim 17 , wherein the synthesizing the precursor thin film layer is performed using any one process selected from among co-evaporation, sputtering, electrodeposition, nanoparticle deposition and solution coating.

19. The method of claim 17 , wherein the primary sulfurization and the secondary sulfurization are performed by thermal treatment in an H 2 S atmosphere or injection of S into a thin film using a vacuum evaporation process.

20. The method of claim 17 , wherein the selenizing is performed by thermal treatment in an H 2 Se atmosphere or injection of Se into a thin film using a vacuum evaporation process.

Assignees

• Korea Energy Research Inst

Inventors

• Yun Jae Ho
• Gwak Jihye
• Ahn Sejin
• Yoon Kyung Hoon
• Shin Kee Shik
• Ahn Seoungkyu
• Cho Ara
• Park Sang Hyun
• Cho Jun Sik
• You Jin Su
• Park Joo Hyung
• Eo Young Joo

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3431

  Selenides · CPC title

• H10P14/3428

  Sulfides · CPC title

• H10P14/3241

  being conductive materials · CPC title

• H10P14/3236

  being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds · CPC title