Power cell and power cell circuit for a power amplifier

Patent metadata

Field	Value
Publication number	US-9780211-B2
Application number	US-201213731873-A
Country	US
Kind code	B2
Filing date	Dec 31, 2012
Priority date	Dec 31, 2012
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A power cell includes a fin over a substrate, the fin extending in a direction substantially perpendicular to a bottom surface of the substrate. The fin includes a first dopant type. The power cell further includes at least one isolation region over the substrate between the fin and an adjacent fin. The power cell further includes a gate structure in contact with the fin and the at least one isolation region, wherein the gate structure comprises a doped region in the fin, wherein the doped region has a second dopant type different from the first dopant type and the doped region defines a channel region in the fin.

First claim

What is claimed is:

1. A power cell comprising:
a fin over a substrate, the fin extending in a first direction substantially perpendicular to a bottom surface of the substrate, wherein the fin comprises a first doped region having a first dopant type;
at least one isolation region over the substrate between the fin and an adjacent fin, wherein a bottom surface of the first doped region is farther from the bottom surface of the substrate than a top surface of the at least one isolation region, a second doped region extends continuously across the isolation region, the second doped region extends into the fin, and a dimension of the second doped region in the isolation region in a second direction perpendicular to the first direction is less than a dimension of the at least one isolation region in the second direction; and
a gate structure in contact with the fin and the at least one isolation region, wherein the gate structure comprises a metal layer over the fin, wherein the metal layer defines a three-dimensional channel region in the fin.

2. The power cell of claim 1 , wherein the second doped region has a second dopant type opposite the first dopant type.

3. The power cell of claim 1 , wherein the metal layer and the fin form a Schottky contact.

4. The power cell of claim 1 , wherein the metal layer and the fin form an ohmic contact.

5. The power cell of claim 1 , wherein the power cell is a tri-gate power cell having three fins and the at least one isolation region is positioned between each of the three fins.

6. The power cell of claim 5 , wherein the gate structure is continuous across all of the three fins.

7. The power cell of claim 1 , wherein the substrate has a resistance greater than 5K ohm-cm.

8. A power cell comprising:
a fin over a substrate, the fin extending in a first direction substantially perpendicular to a bottom surface of the substrate, wherein the fin comprises a first doped region having a first dopant type;
at least one isolation region over the substrate between the fin and an adjacent fin, wherein a bottom surface of the first doped region is farther from the bottom surface of the substrate than a top surface of the at least one isolation region, a top portion of the at least one isolation region includes a second doped region, and a width of the second doped region in a direction perpendicular to the first direction is less than a width of the at least one isolation structure; and
a gate structure in contact with the fin and the at least one isolation region, wherein the gate structure is substantially perpendicular to the fin, wherein the gate structure comprises a metal layer over the fin, wherein the metal layer defines a channel region in the fin.

9. The power cell of claim 8 , wherein the second doped region is part of the gate structure.

10. The power cell of claim 8 , wherein the metal layer and the fin form a Schottky contact.

11. The power cell of claim 8 , wherein the metal layer and the fin form an ohmic contact.

12. The power cell of claim 8 , wherein the power cell is a tri-gate power cell having three fins and the at least one isolation region is positioned between each of the three fins.

13. The power cell of claim 12 , wherein the gate structure is continuous across all of the three fins.

14. A power cell comprising:
a fin over a substrate, the fin extending in a direction substantially perpendicular to a bottom surface of the substrate, wherein the fin comprises a first doped region having an N type dopant;
at least one isolation region over the substrate between the fin and an adjacent fin, wherein a bottom surface of the first doped region is farther from the bottom surface of the substrate than a top surface of the at least one isolation region, a top portion of the at least one isolation region comprises a second doped region, an area of the second doped region is less than an area of a top surface of the at least one isolation region, and the top portion in physical contact with the doped region of the fin;
a gate structure in contact with the fin and the at least one isolation region, wherein the gate structure comprises a metal layer over the fin, wherein the metal layer defines a three-dimensional channel region in the fin.

15. The power cell of claim 14 , wherein the second doped region has a P type dopant.

16. The power cell of claim 14 , wherein the metal layer and the fin form a Schottky contact.

17. The power cell of claim 14 , wherein the metal layer and the fin form an ohmic contact.

18. The power cell of claim 8 , wherein the power cell is a tri-gate power cell having three fins and the at least one isolation region is positioned between each of the three fins.

19. The power cell of claim 18 , wherein the gate structure is continuous across all of the three fins.

20. The power cell of claim 1 , wherein a top of the second doped region is coplanar with a top of the at least one isolation region.

Assignees

• Jou Chewn-Pu
• Yeh Tzu-Jin
• Chen Chia-Chung
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Jou Chewn-Pu
• Yeh Tzu-Jin
• Chen Chia-Chung

Classifications

• H01L29/66901

  Electricity · mapped topic

• H01L29/785 Primary

  Electricity · mapped topic

• H10D84/853

  comprising FinFETs · CPC title

• H10D84/0193

  the components including FinFETs · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title