Semiconductor device and manufacturing method of the same

Patent metadata

Field	Value
Publication number	US-9780201-B2
Application number	US-201615223002-A
Country	US
Kind code	B2
Filing date	Jul 29, 2016
Priority date	Oct 22, 2013
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first transistor;
performing a first heat treatment after forming the first transistor;
forming a first insulating film over the first transistor;
performing a second heat treatment after forming the first insulating film;
forming a first barrier film over the first insulating film after performing the second heat treatment;
forming a second insulating film over the first barrier film;
forming an opening in the second insulating film, the first barrier film, and the first insulating film; and
forming a second transistor comprising an oxide semiconductor film comprising a channel formation region, the second transistor being over the second insulating film and electrically connected to the first transistor through the opening.

2. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein a temperature of the second heat treatment is higher than that of the first heat treatment.

3. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first transistor is formed by using a semiconductor substrate.

4. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the second heat treatment is performed for less than or equal to 10 hours at a temperature higher than or equal to 450° C. and lower than 650° C.

5. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first barrier film is loaned by a DC sputtering method.

6. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein a second barrier film is formed over the second transistor.

7. The method for manufacturing a semiconductor device, according to claim 6 ,
wherein the second barrier film is formed by a DC sputtering method.

8. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein after the first transistor is formed, a third insulating film containing hydrogen is formed before the first heat treatment.

9. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first transistor;
performing a first heat treatment after forming the first transistor;
forming a first insulating film over the first transistor;
forming a first barrier film over the first insulating film;
forming a second insulating film over the first barrier film;
forming an opening in the second insulating film, the first barrier film, and the first insulating film;
performing a second heat treatment after forming the opening; and
forming a second transistor comprising an oxide semiconductor film comprising a channel formation region, the second transistor being over the second insulating film and electrically connected to the first transistor through the opening.

10. The method for manufacturing a semiconductor device, according to claim 9 ,
wherein a temperature of the second heat treatment is higher than that of the first heat treatment.

11. The method for manufacturing a semiconductor device, according to claim 9 ,
wherein the first transistor is formed by using a semiconductor substrate.

12. The method for manufacturing a semiconductor device, according to claim 9
wherein the second heat treatment is performed for less than or equal to 10 hours at a temperature higher than or equal to 450° C. and lower than 650° C.

13. The method for manufacturing a semiconductor device, according to claim 9 ,
wherein the first barrier film is formed by a DC sputtering method.

14. The method for manufacturing a semiconductor device, according to claim 9 ,
wherein a second barrier film is formed over the second transistor.

15. The method for manufacturing a semiconductor device, according to claim 14 ,
wherein the second barrier film is formed by a DC sputtering method.

16. The method for manufacturing a semiconductor device, according to claim 9 ,
wherein after the first transistor is formed, a third insulating film containing hydrogen is formed before the first heat treatment.

Assignees

• Semiconductor Energy Lab

Inventors

• Ando Yoshinori
• Miyairi Hidekazu
• Yamade Naoto
• Higa Asako
• Suzuki Miki
• Ieda Yoshinori
• Suzuki Yasutaka
• Nei Kosei
• Yamazaki Shunpei

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P50/28

  of insulating materials · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6516

  of treatments performed after formation of the materials · CPC title