Semiconductor device and method for fabricating the same
US-2016104786-A1 · Apr 14, 2016 · US
Semiconductor devices having work function metal films and tuning materials
US9780183B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9780183-B2 |
| Application number | US-201614989154-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 6, 2016 |
| Priority date | Feb 3, 2015 |
| Publication date | Oct 3, 2017 |
| Grant date | Oct 3, 2017 |
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Abstract
Official abstract text for this publication.
A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first fin-type transistor comprising a first fin, a first trench on the first fin, a first dielectric film extending along inner walls of the first trench and a first work function metal film on the first dielectric film in the first trench, the first work function metal film being of a first conductivity type; a second fin-type transistor comprising a second fin, a second trench on the second fin, a second dielectric f…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L29/4966Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9780183B2 cover?
- A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comp…
- Who is the assignee on this patent?
- Kim Wan-Don, Kwon Oh-Seong, Na Hoon-Joo, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification H01L29/4966. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 03 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).