Semiconductor device

Patent metadata

Field	Value
Publication number	US-9780069-B2
Application number	US-201514664168-A
Country	US
Kind code	B2
Filing date	Mar 20, 2015
Priority date	Jun 18, 2009
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

First claim

What is claimed is:

1. A wire bonding method, comprising:
forming an FAB at a tip of a copper wire held by a capillary;
making the capillary approach a pad on a top surface of a semiconductor chip and making the FAB contact the pad;
applying a load to the FAB by means of the capillary after the contacting of the FAB with the pad; and
applying a drive current to an ultrasonic transducer provided in the capillary, the value of the drive current applied to the ultrasonic transducer being gradually increased to a predetermined value after contacting of the FAB with the pad.

2. The wire bonding method according to claim 1 , wherein
in a case where a bottleneck type capillary is used as the capillary, a value of the drive current applied to the ultrasonic transducer is set to a value that is no less than 1.3 times and no more than 1.5 times the value of the drive current in a case where a standard type capillary is used as the capillary.

3. The wire bonding method according to claim 2 , wherein
a value of the drive current in a case where a bottleneck type capillary is used as the capillary is set to 1.4 times the value of the drive current in a case where a standard type capillary is used as the capillary.

4. The wire bonding method according to claim 1 , wherein
the value of the drive current applied to the ultrasonic transducer is increased to the predetermined value at a fixed rate of change after contacting of the FAB with the pad.

5. The wire bonding method according to claim 1 , wherein
the drive current is applied to the ultrasonic transducer before the contacting of the FAB with the pad.

6. A method for manufacturing a semiconductor device comprising:
forming an FAB at a tip of a copper wire held by a capillary;
making the capillary approach a pad on a top surface of a semiconductor chip and making the FAB contact the pad;
applying a load to the FAB by means of the capillary after the contacting of the FAB with the pad; and
applying a drive current to an ultrasonic transducer provided in the capillary, the value of the drive current applied to the ultrasonic transducer being gradually increased to a predetermined value after contacting of the FAB with the pad.

7. The method for manufacturing a semiconductor device according to claim 6 , wherein
in a case where a bottleneck type capillary is used as the capillary, a value of the drive current applied to the ultrasonic transducer is set to a value that is no less than 1.3 times and no more than 1.5 times the value of the drive current in a case where a standard type capillary is used as the capillary.

8. The method for manufacturing a semiconductor device according to claim 7 , wherein
a value of the drive current in a case where a bottleneck type capillary is used as the capillary is set to 1.4 times the value of the drive current in a case where a standard type capillary is used as the capillary.

9. The method for manufacturing a semiconductor device according to claim 6 , wherein
the value of the drive current applied to the ultrasonic transducer is increased to the predetermined value at a fixed rate of change after contacting of the FAB with the pad.

10. The method for manufacturing a semiconductor device according to claim 6 , wherein
the drive current is applied to the ultrasonic transducer before the contacting of the FAB with the pad.

11. The method for manufacturing a semiconductor device according to claim 6 , further comprising:
bonding the copper wire to a lead around the semiconductor chip.

12. The method for manufacturing a semiconductor device according to claim 6 , further comprising:
forming a water-impermeable film so as to integrally cover the entire pad and an entire pad bond portion of the copper wire.

13. The method for manufacturing a semiconductor device according to claim 12 , wherein
the entire copper wire is covered with the water-impermeable film.

14. The method for manufacturing a semiconductor device according to claim 11 , further comprising:
forming a water-impermeable film so as to integrally cover the entire pad, an entire pad bond portion of the copper wire, the entire lead and an entire lead bond portion of the copper wire.

15. The method for manufacturing a semiconductor device according to claim 12 , wherein the water-impermeable film includes an insulating film.

16. The method for manufacturing a semiconductor device according to claim 12 , wherein the water-impermeable film includes a metal film.

17. The method for manufacturing a semiconductor device according to claim 16 , wherein the metal film is made of nickel or palladium.

18. The method for manufacturing a semiconductor device according to claim 12 , wherein the water-impermeable film is 0.5 μm to 3 μm thick.

19. A method for manufacturing a semiconductor device, comprising:
forming an FAB at a tip of a copper wire held by a capillary;
making the capillary approach a pad on a top surface of a semiconductor chip and making the FAB contact the pad;
applying a load to the FAB by means of the capillary after the contacting of the FAB with the pad;
applying a drive current to an ultrasonic transducer provided in the capillary; and
forming a water-impermeable film, that includes a metal film, so as to integrally cover the entire pad and an entire pad bond portion of the copper wire.

20. The method for manufacturing a semiconductor device according to claim 19 , wherein the metal film is made of nickel or palladium.

Assignees

• Rohm Co Ltd

Inventors

• Haga Motoharu
• Yoshida Shingo
• Kasuya Yasumasa
• Nagahara Toichi
• Kimura Akihiro
• Fujii Kenji

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title