Scanning ion beam deposition and etch
US-12176178-B2 · Dec 24, 2024 · US
US9779953B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9779953-B2 |
| Application number | US-201414491729-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2014 |
| Priority date | Sep 25, 2013 |
| Publication date | Oct 3, 2017 |
| Grant date | Oct 3, 2017 |
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Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils.
Opening claim text (preview).
The invention claimed is: 1. An apparatus for processing a substrate, comprising: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils, wherein the electromagnetic dipole includes at least two electromagnets comprising: a first electromagnetic coil of one or more wires wrapped in a first plurality of layers and having a first polarity; and a second electromagnetic coil of one or more wires wrapped in a second plurality of layers having a second polarity opposite the first polarity, wherein the second electromagnetic coil is disposed radially outward of the first electromagnetic coil at a first distance; and an actuator configured to move at least one of the at least two electromagnets from a first position above the dielectric lid to a second position above the dielectric lid. 2. The apparatus of claim 1 , wherein the first distance is about 0.5 inches to about 5 inches. 3. The apparatus of claim 1 , wherein the first distance is 1 inch. 4. The apparatus of claim 1 , wherein the electromagnetic dipole is configured to form a magnetic field in an area proximate to and below the dielectric lid to enable plasma density tuning. 5. The apparatus of claim 1 , wherein the electromagnetic dipole is configured to adjust an impedance in an area proximate to and below the dielectric lid to enable plasma density tuning.
of Group IV materials · CPC title
Particular magnets or magnet arrangements for controlling the discharge · CPC title
Antennas, e.g. particular shapes of coils · CPC title
Electricity · mapped topic
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