Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method

Patent metadata

Field	Value
Publication number	US-9779938-B2
Application number	US-201614989059-A
Country	US
Kind code	B2
Filing date	Jan 6, 2016
Priority date	Jul 10, 2013
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy, in which peak areas, which are obtained by separation of peaks having a peak energy of a metal-oxygen bond attributed to 1s electrons of oxygen, satisfy the following expression.

0.9< D/E   (1)

(D represents a peak area of a component having a peak position in a binding energy range of 529 eV or higher and lower than 531 eV, and E represents a peak area of a component having a peak position in a binding energy range of 531 eV to 532 eV.)

First claim

What is claimed is:

1. A metal oxide thin film comprising
a component having a peak position which is attributed to 1 s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy,
wherein peak areas, which are obtained by separation of peaks attributed to 1 s electrons of oxygen, satisfy 0.9<D/E,
D represents a peak area of a component having a peak position in a binding energy range of 529 eV or higher and lower than 531 eV, and
E represents a peak area of a component having a peak position in a binding energy range of 531 eV to 532 eV, and
wherein a content of indium is 50 atom % or higher with respect to all metal elements contained in the metal oxide thin film.

2. The metal oxide thin film according to claim 1 ,
wherein in the XPS spectrum, a component having a peak position in a binding energy range of 406 eV to 408 eV is not substantially contained.

3. The metal oxide thin film according to claim 1 ,
wherein 0.9<D/E≦5.5 is satisfied.

4. The metal oxide thin film according to claim 3 ,
wherein 1≦D/E≦5.1 is satisfied.

5. The metal oxide thin film according to claim 3 , wherein the metal oxide thin film is a semiconductor thin film.

6. The metal oxide thin film according to claim 3 ,
wherein indium and at least one metal selected from the group consisting of zinc, tin, gallium, and aluminum are contained.

7. A thin film transistor comprising the metal oxide thin film according to claim 5 as an active layer.

8. A display apparatus comprising the thin film transistor according to claim 7 .

Assignees

• Fujifilm Corp

Inventors

• Takata Masahiro
• Kikuchi Makoto
• Tanaka Atsushi
• Suzuki Masayuki

Classifications

• H10P14/3426

  Oxides · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H01L29/24

  Electricity · mapped topic

• H01L21/02554

  Electricity · mapped topic