Semiconductor optical device, arrayed semiconductor optical device, and optical module

Patent metadata

Field	Value
Publication number	US-9778428-B2
Application number	US-201615334317-A
Country	US
Kind code	B2
Filing date	Oct 26, 2016
Priority date	Oct 29, 2015
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

Provided is a semiconductor optical device, an arrayed semiconductor optical device, an optical module having a structure to reduce the parasitic capacitance as well as a high design degree of freedom and having a multilayer structure in which a semi-insulating substrate, a first semiconductor layer having one conductive type, an active layer having light emission function, a second semiconductor layer having the other conductive type, an insulating layer, and a conductive layer are stacked in order from the bottom. The multilayer structure includes a light emitting structure, a first electrode structure, and a second electrode structure. In the semi-insulating substrate and the first semiconductor layer, a first grove which separates the second electrode structure from a remaining portion and approaches the second electrode structure with a non-linear shape rather than a linear shape in its entirety is formed.

First claim

What is claimed is:

1. A semiconductor optical device comprising:
a multilayer structure in which
a semi-insulating substrate,
a first semiconductor layer having one of p-type conductivity and n-type conductivity,
an active layer having light emission function,
a second semiconductor layer having conductivity opposite to that of the first semiconductor layer,
an insulating layer, and
an conductive layer are stacked in order from the bottom,

wherein the multilayer structure includes a light emitting structure, a first electrode structure, and a second electrode structure,
wherein in the semi-insulating substrate and the first semiconductor layer, a first groove, which separates the second electrode structure from a remaining portion and approaches the second electrode structure with a non-linear shape rather than a linear shape in its entirety, is formed,
wherein the remaining portion of the first semiconductor layer separated by the first groove continues from the light emitting structure to the first electrode structure,
wherein the active layer is formed on each of the light emitting structure, the first electrode structure, and the second electrode structure to be separated,
wherein the second semiconductor layer is formed on each of the light emitting structure, the first electrode structure, and the second electrode to be separated,
wherein the insulating layer is formed to cover the first semiconductor layer and expose a portion of the second semiconductor layer in the light emitting structure, cover the second semiconductor layer in the first electrode structure, cover the first semiconductor layer and the second semiconductor layer in the second electrode structure, and cover the first semiconductor layer in the inner surface of the first groove, and
wherein the conductive layer includes a first wiring pattern contacting the first semiconductor layer and reaching the upper end of the first electrode structure and a second wiring pattern contacting the second semiconductor layer in the light emitting structure and reaching the upper end of the second electrode structure through above the insulating layer in the inner side of the first groove.

2. The semiconductor optical device according to claim 1 ,
wherein the light emitting structure includes a ridge configured by a portion of the second semiconductor layer.

3. The semiconductor optical device according to claim 1 ,
wherein the insulating layer is formed to expose a portion of the first semiconductor layer between the light emitting structure and the first electrode structure, and
wherein the first wiring pattern contacts the first semiconductor layer to be electrically connected between the light emitting structure and the first electrode structure.

4. The semiconductor optical device according to claim 1 ,
wherein the light emitting structure further includes a diffraction grating, and is configured as a distributed feedback laser.

5. The semiconductor optical device according to claim 1 ,
wherein the light emitting structure further includes a distributed Bragg reflection mirror, and is configured as a distributed Bragg reflector type laser.

6. The semiconductor optical device according to claim 1 ,
wherein the light emitting structure further includes a distributed feedback laser and a distributed Bragg reflection mirror, and is configured as a distributed reflector type laser.

7. The semiconductor optical device according to claim 1 ,
wherein mirror structures in which light emitted from the light emitting structure is reflected toward a side opposite to the conductor layer are monolithically integrated.

8. The semiconductor optical device according to claim 1 ,
wherein the semi-insulating substrate and the first semiconductor layer have a side surface enlarging in a thickness direction, and
wherein at least one end of the first groove is formed to be opened to the side surface of the semi-insulating substrate and the first semiconductor layer.

9. An arrayed semiconductor optical device comprising:
a plurality of semiconductor optical devices,
wherein each of the plurality of semiconductor optical devices is the semiconductor optical device according to claim 1 ,
wherein the plurality of semiconductor optical devices are monolithically integrated, and
wherein a second groove separating adjacent semiconductor optical devices is formed in the semi-insulating substrate and the first semiconductor layer.

10. The arrayed semiconductor optical device according to claim 9 ,
wherein at least one end of the first groove formed on one of the adjacent semiconductor optical devices is formed to be opened to the second groove.

11. An optical module comprising:
the semiconductor optical device according to claim 1 ;
a drive circuit for driving the semiconductor optical device;
an external waveguide optically connected to the semiconductor optical device; and
a package for fixing the semiconductor optical device, the drive circuit, and the external waveguide to predetermined positions, respectively.

12. An optical module comprising:
the arrayed semiconductor optical device according to claim 9 ;
a drive circuit for driving the plurality of semiconductor optical devices;
a plurality of external waveguides optically connected respectively to the plurality of semiconductor optical devices; and
a package for fixing the plurality of semiconductor optical devices, the drive circuit, and the plurality of external waveguides to predetermined positions, respectively.

13. A semiconductor optical device comprising:
a semiconductor substrate;
a light emitting structure provided on a surface of the semiconductor substrate, having a waveguide structure, and including a laser part and a distributed Bragg reflection mirror;
a monitor PD part arranged to be optically connected on the distributed Bragg reflection mirror side of the light emitting structure;
a window structure arranged on a side opposite to the distributed Bragg reflection mirror side of the monitor PD part; and
a mirror structure reflecting light emitted from a side opposite to the distributed Bragg reflection mirror side of the laser part to a rear surface of the semiconductor substrate.

Assignees

• Oclaro Japan Inc

Inventors

• Adachi Koichiro
• Nakahara Kouji

Classifications

• H01S5/42

  Arrays of surface emitting lasers · CPC title

• H01S5/1085

  Oblique facets · CPC title

• H01S5/0267

  Integrated focusing lens (H01S5/18388 takes precedence) · CPC title

• H01S5/04257

  having positive and negative electrodes on the same side of the substrate · CPC title

• H01S5/0422

  with n- and p-contacts on the same side of the active layer · CPC title