Flip-chip hybridisation of two microelectronic components using a UV anneal
US-9318453-B2 · Apr 19, 2016 · US
US9778375B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9778375-B2 |
| Application number | US-201515300560-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 17, 2015 |
| Priority date | Apr 3, 2014 |
| Publication date | Oct 3, 2017 |
| Grant date | Oct 3, 2017 |
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An X-ray detector including a substrate having opposite first and second faces, at least a first temperature sensor on the side of the first or second face, and at least one stack including of a copper oxide layer and a copper layer. The copper oxide layer is located between the copper layer and the substrate. The stack covers at least partially the first temperature sensor or is at least partially opposite the first temperature sensor.
Opening claim text (preview).
The invention claimed is: 1. An X-ray detector, comprising a substrate comprising first and second opposite surfaces, at least one first temperature sensor on the side of the first or of the second surface and at least one stack of a copper oxide layer and of a copper layer, the copper oxide layer being located between the copper layer and the substrate, the stack at least partly covering the first temperature sensor or being at least partially opposite the first temperature sensor. 2. The detector of claim 1 , wherein the thickness of the copper layer is in the range from 5 μm to 60 μm. 3. The detector of claim 1 or 2 , wherein the thickness of the copper oxide layer is in the range from 100 nm to 1 μm. 4. The detector of claim 1 , wherein the first temperature sensor rests on the first surface and wherein the copper oxide layer covers the first temperature sensor. 5. The detector of claim 4 , further comprising a second temperature sensor resting on the second surface and at least partially opposite the first temperature sensor. 6. The detector of claim 1 , comprising a deformable enclosure between the stack and the first temperature sensor, the enclosure containing heat-sensitive molecules capable of deforming the enclosure when the temperature exceeds a threshold temperature. 7. The detector of claim 1 , wherein the substrate comprises a flexible film of a crystalline or semicrystalline material comprising an area at least partially covered with the first temperature sensor, and surrounded with an amorphized wall. 8. A method of manufacturing the X-ray detector of claim 1 , comprising the steps of: providing a substrate comprising first and second opposite surfaces; forming at least one first temperature sensor on the first or second surface side; depositing a copper oxide pad at least partly covering the first temperature sensor or being at least partially opposite the first temperature sensor; and irradiating the copper oxide pad with an ultraviolet radiation to form, in the pad, a stack of a copper oxide layer and of a copper layer, the copper oxide layer being located between the copper layer and the substrate. 9. The method of claim 8 , wherein the ultraviolet radiation is applied in pulses, each pulse having a duration in the range from 500 μs to 3 ms, with a fluence in the range from 10 J/cm2 to 30 J/cm2. 10. The method of claim 8 , wherein the first temperature sensor is formed by printing techniques.
with other specified detectors not provided for in the other subgroups of G01T1/16 · CPC title
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