Oxynitride phosphor powder

Patent metadata

Field	Value
Publication number	US-9777215-B2
Application number	US-201414890972-A
Country	US
Kind code	B2
Filing date	May 26, 2014
Priority date	May 28, 2013
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

An oxynitride phosphor powder is an α-SiAlON phosphor having a dominant wavelength of 565-577 nm and fluorescence intensity and external quantum efficiency that are high enough for practical use. The oxynitride phosphor powder comprises an α-SiAlON represented by the compositional formula: Ca x1 Eu x2 Yb x3 Si 12−(y+z) Al (y+z) O z N 16−z (wherein 0.0<x1≦2.0, 0.0000<x2≦0.0100, 0.0000<x3≦0.0100, 0.4≦x2/x3≦1.4, 1.0≦y≦4.0, 0.5≦z≦2.0).

First claim

The invention claimed is:

1. An oxynitride phosphor powder comprising an α-SiAlON, represented by:
Ca x1 Eu x2 Yb x3 Si 12−(y+z) Al (y+z) O z N 16−z

wherein 0.0<x1≦2.0, 0.0000<x2≦0.0100, 0.0000<x3≦0.0100, 0.4≦x2/x3≦1.4, 1.0≦y≦4.0, and 0.5≦z≦2.0.

2. The oxynitride phosphor powder according to claim 1 , wherein x1, x2, x3, y and z are 0.9<x1≦1.5, 0.0035≦x2≦0.0060, 0.0040≦x3≦0.0080, 0.65≦x2/x3≦1.1, 2.0≦y≦3.0, and 1.0≦z≦1.5.

3. The oxynitride phosphor powder according to claim 1 , wherein fluorescence having a dominant wavelength of 565 to 577 nm is emitted upon excitation with light having a wavelength of 450 nm and an external quantum efficiency thereof is 41% or more.

4. A method of producing the oxynitride phosphor powder according to claim 1 comprising:
mixing a silicon source, an aluminum source, a calcium source, a europium source and an ytterbium source to provide a composition represented by:
Ca x1 Eu x2 Yb x3 Si 12−(y+z) Al (y+z) O z N 16−z

wherein 0.0<x1≦2.0, 0.0000<x2≦0.0100, 0.0000<x3≦0.0100, 0.4≦x2/x3≦1.4, 1.0≦y≦4.0, and 0.5≦z≦2.0,
firing at a temperature of 1,500 to 2,000° C. in an inert gas atmosphere to obtain a fired oxynitride represented by the above formula, and
heat-treating said fired oxynitride at a temperature of 1,100 to 1,600° C. in an inert gas atmosphere.

5. The method according to claim 4 , wherein said silicon source is a silicon nitride powder and said silicon nitride powder has an oxygen content of 0.2 to 0.9 mass %, an average particle size of 1.0 to 12.0 μm and a specific surface area of 0.2 to 3.0 m 2 /g.

6. A light-emitting device comprising a light-emitting source and a phosphor, wherein the light-emitting source comprises a light-emitting diode and the phosphor uses at least the oxynitride phosphor powder according to claim 1 .

7. The oxynitride phosphor powder according to claim 2 , wherein fluorescence having a dominant wavelength of 565 to 577 nm is emitted upon excitation with light having a wavelength of 450 nm and an external quantum efficiency thereof is 41% or more.

8. A method of producing the oxynitride phosphor powder according to claim 2 comprising:
mixing a silicon source, an aluminum source, a calcium source, a europium source and an ytterbium source to provide a composition represented by:
Ca x1 Eu x2 Yb x3 Si 12−(y+z) Al (y+z) O z N 16−z

wherein 0.0<x1≦2.0, 0.0000<x2≦0.0100, 0.0000<x3≦0.0100, 0.4≦x2/x3≦1.4, 1.0≦y≦4.0, and 0.5≦z≦2.0,
firing at a temperature of 1,500 to 2,000° C. in an inert gas atmosphere to obtain a fired oxynitride represented by the above formula, and
heat-treating said fired oxynitride at a temperature of 1,100 to 1,600° C. in an inert gas atmosphere.

9. A method of producing the oxynitride phosphor powder according to claim 3 comprising:
mixing a silicon source, an aluminum source, a calcium source, a europium source and an ytterbium source to provide a composition represented by:
Ca x1 Eu x2 Yb x3 Si 12−(y+z) Al (y+z) O z N 16−z

wherein 0.0<x1≦2.0, 0.0000<x2≦0.0100, 0.0000<x3≦0.0100, 0.4≦x2/x3≦1.4, 1.0≦y≦4.0, and 0.5≦z≦2.0,
firing at a temperature of 1,500 to 2,000° C. in an inert gas atmosphere to obtain a fired oxynitride represented by the above formula, and
heat-treating said fired oxynitride at a temperature of 1,100 to 1,600° C. in an inert gas atmosphere.

10. A light-emitting device comprising a light-emitting source and a phosphor, wherein the light-emitting source comprises a light-emitting diode and the phosphor uses at least the oxynitride phosphor powder according to claim 2 .

11. A light-emitting device comprising a light-emitting source and a phosphor, wherein the light-emitting source comprises a light-emitting diode and the phosphor uses at least the oxynitride phosphor powder according to claim 3 .

Assignees

• Ube Industries

Inventors

• Sumino Mao
• Sakai Takuma
• Iwashita Kazuki
• Fujinaga Masataka
• Jida Shinsuke

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/5366

  the bond wires having kinks · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• C09K11/0883 Primary

  Arsenides; Nitrides; Phosphides · CPC title

• C09K11/77928 Primary

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title