Resin composition, dry-etching resist mask, and patterning method

Patent metadata

Field	Value
Publication number	US-9777079-B2
Application number	US-201415035897-A
Country	US
Kind code	B2
Filing date	Dec 17, 2014
Priority date	Dec 25, 2013
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

Provided is a curable resin composition for a dry-etching resist, the curable resin composition containing a polymer (A) having, in a side chain, a particular structure including an aromatic group having a vinyl group. The polymer (A) includes 80 to 100 wt % of the particular structure. In addition, provided are a dry-etching resist mask obtained by curing the curable composition for a dry-etching resist, and the dry-etching resist mask having a pattern formed by a nanoimprint method.

First claim

The invention claimed is:

1. A pattern transfer method comprising:
a step of pressing a mold against a curable resin composition for a dry-etching resist, the curable resin composition comprising a polymer (A) having a structure represented by a formula (a-1) below, the polymer (A) including 80 to 100 wt % of the structure represented by the formula (a-1),
[Chem. 1]
X p   (a-1),

in the formula (a-1), X is a structural unit represented by X1 and X2, X1 is represented by a formula (a-2) below, and X2 is represented by a formula (a-3) below, wherein the number of X1 is m and the number of X2 is n in the polymer (A), m is an integer of 3 or more, n is an integer of 0 or 1 or more, and m/(m+n) ranges from 0.2 to 1, and p represents an integer of 3 to 2000,

in the formula (a-2), Ar 1 represents an aromatic group having at least one aromatic ring, Y 1 is a single bond or a divalent linking group including a C1 to C3 hydrocarbon group, Z 1 is a hydrocarbon group having at least one vinyl group, and r1 represents an integer of 1 to 5,

in the formula (a-3), Ar 2 represents an aromatic group having at least one aromatic ring, and Y 2 is a single bond or a divalent linking group including a C1 to C3 hydrocarbon group;
a step of providing a cured product having a pattern by curing the curable resin composition for a dry-etching resist to form the pattern; and
a step of transferring the pattern to a workpiece by performing dry etching using as a resist mask the obtained cured product having the pattern.

2. A pattern transfer method according to claim 1 , wherein X1 in the formula (a-1) is represented by a formula (a-4) below,

in the formula (a-4), Y 3 is a single bond or a divalent linking group including a C1 to C3 hydrocarbon group, Z 2 is a hydrocarbon group having at least one vinyl group, and r2 represents an integer of 1 to 5.

3. A nanoimprint method comprising:
a step of pressing a mold against a curable resin composition for a dry-etching resist, the curable resin composition comprising a polymer (A) having a structure represented by a formula (a-1) below, the polymer (A) including 80 to 100 wt % of the structure represented by the formula (a-1),
[Chem. 1]
X p   (a-1),

in the formula (a-1), X is a structural unit represented by X1 and X2, X1 is represented by a formula (a-2) below, and X2 is represented by a formula (a-3) below, wherein the number of X1 is m and the number of X2 is n in the polymer (A), m is an integer of 3 or more, n is an integer of 0 or 1 or more, and m/(m+n) ranges from 0.2 to 1, and p represents an integer of 3 to 2000,

in the formula (a-2), Ar 1 represents an aromatic group having at least one aromatic ring, Y 1 is a single bond or a divalent linking group including a C1 to C3 hydrocarbon group, Z 1 is a hydrocarbon group having at least one vinyl group, and r1 represents an integer of 1 to 5,

in the formula (a-3), Ar 2 represents an aromatic group having at least one aromatic ring, and Y 2 is a single bond or a divalent linking group including a C1 to C3 hydrocarbon group, wherein the mode is a nanoimprinting mode;
a step of providing a cured product having a pattern by curing the curable resin composition for a dry-etching resist to form the pattern; and
a step of transferring the pattern to a workpiece by performing dry etching using as a resist mask the obtained cured product having the pattern.

4. A nanoimprint method according claim 3 , wherein the step of pressing a mold against the curable resin composition for a dry-etching resist is performed while the curable resin composition for a dry-etching resist is heated.

Assignees

• Dainippon Ink & Chemicals

Inventors

• Ibe Takeshi
• Yada Makoto

Classifications

• H10P50/73

  using masks for insulating materials · CPC title

• C09D125/16

  Homopolymers or copolymers of alkyl-substituted styrenes · CPC title

• B29C59/026

  of layered or coated substantially flat surfaces · CPC title

• C08F12/34

  Monomers containing two or more unsaturated aliphatic radicals · CPC title

• H01L21/31144

  Electricity · mapped topic