Method for forming carbon nanotube film

Patent metadata

Field	Value
Publication number	US-9776871-B2
Application number	US-201414316747-A
Country	US
Kind code	B2
Filing date	Jun 26, 2014
Priority date	Apr 14, 2014
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A method for forming a carbon nanotube film is provided. An elastic substitute substrate and a carbon nanotube array transferred on a surface of the elastic substitute substrate are used. The carbon nanotube array is configured for drawing a carbon nanotube film therefrom. The carbon nanotube film has carbon nanotubes joined end to end. The elastic substitute substrate is stretched along a plurality of directions to increase lengths of the carbon nanotube array along the plurality of directions. The carbon nanotube film is drawn from the stretching carbon nanotube array.

First claim

What is claimed is:

1. A method for forming a carbon nanotube film, the method comprising:
providing a carbon nanotube array transferred onto a surface of an elastic substitute substrate, the carbon nanotube array being configured for drawing a carbon nanotube film therefrom, the carbon nanotube film comprising a plurality of carbon nanotubes joined end to end;
stretching the elastic substitute substrate along a plurality of stretching directions thereby forming a stretched carbon nanotube array having increases in lengths along the plurality of stretching directions; and
drawing the carbon nanotube film from the stretched carbon nanotube array.

2. The method of claim 1 , wherein the carbon nanotube array is transferred to the elastic substitute substrate by:
providing a growing substrate having the carbon nanotube array grown thereon, the carbon nanotube array having a bottom surface adjacent to the growing substrate and a top surface away from the growing substrate; and
transferring the carbon nanotube array from the growing substrate to the elastic substitute substrate, the carbon nanotube array still being configured for drawing the carbon nanotube film from the elastic substitute substrate.

3. The method of claim 2 , wherein the transferring the carbon nanotube array from the growing substrate to the elastic substitute substrate comprises:
contacting the surface of the elastic substitute substrate to the top surface of the carbon nanotube array; and
separating the elastic substitute substrate from the growing substrate, thereby separating the bottom surface of the carbon nanotube array from the growing substrate.

4. The method of claim 3 , wherein the surface of the elastic substitute substrate and the top surface of the carbon nanotube array are combined only by van der Waals attractive forces.

5. The method of claim 3 , wherein the surface of the substitute substrate has a plurality of microstructures located thereon.

6. The method of claim 3 , wherein the substitute substrate is spaced from the growing substrate by a spacing element, the spacing element has a height between the substitute substrate and the growing substrate less than or equal to the height of the carbon nanotube array.

7. The method of claim 2 , wherein the transferring the carbon nanotube array from the growing substrate to the elastic substitute substrate comprises:
placing the elastic substitute substrate on the top surface of the carbon nanotube array and sandwiching liquid medium between the elastic substitute substrate and the carbon nanotube array;
solidifying the liquid medium between the elastic substitute substrate and the carbon nanotube array into solid medium;
separating the elastic substitute substrate from the growing substrate, thereby separating the bottom surface of the carbon nanotube array from the growing substrate; and
removing the solid medium between the elastic substitute substrate and the carbon nanotube array.

8. The method of claim 7 , wherein the sandwiching the liquid medium between the elastic substitute substrate and the carbon nanotube array comprises:
forming the liquid medium on the top surface of the carbon nanotube array; and
contacting the surface of the elastic substitute substrate and the liquid medium on the top surface with each other.

9. The method of claim 8 , wherein the solidifying the liquid medium between the substitute substrate and the carbon nanotube array comprises contacting the substitute substrate having a temperature below a freezing point with the liquid medium on the top surface of the carbon nanotube array.

10. The method of claim 7 , wherein the sandwiching the liquid medium between the substitute substrate and the carbon nanotube array comprises:
forming the liquid medium on the surface of the substitute substrate; and
contacting the top surface of the carbon nanotube array and the liquid medium on the surface of the substitute substrate with each other.

11. The method of claim 7 , wherein the liquid medium is in a shape of a plurality of droplets, mist, or film, and a diameter of the droplet and a thickness of the film is in a range from about 10 nanometers to about 300 microns.

12. The method of claim 7 , wherein the solidifying the liquid medium between the substitute substrate and the carbon nanotube array comprises placing a lamination of the growing substrate, the carbon nanotube array, the liquid medium, and the substitute substrate into a freezer, the freezer having an internal temperature below a freezing point of the liquid medium.

13. The method of claim 1 , wherein an area-change rate of the carbon nanotube array is larger than 0 and smaller than or equal to 300%.

14. The method of claim 1 further comprising forming at least one groove on the carbon nanotube array, a length direction of the at least one groove is substantially perpendicular to at least one of the plurality stretching directions.

15. The method of claim 14 , wherein the at least one groove is formed by laser etching.

16. The method of claim 14 , wherein the at least one groove is a circular groove coaxially arranged with the carbon nanotube array.

17. The method of claim 14 , wherein the at least one groove comprises a plurality of grooves having length directions along two directions substantially perpendicular to each other.

18. The method of claim 14 , wherein a depth of the at least one groove is smaller than a height of the carbon nanotube array.

19. The method of claim 14 , wherein a depth of the at least one groove is about 30% to about 60% of a height of the carbon nanotube array.

20. The method of claim 14 , wherein a width of the at least one groove is about 10 microns to about 100 microns.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Wei Yang
• Fan Shou-Shan

Classifications

• C01B32/16 Primary

  Preparation · CPC title

• C01B32/168

  After-treatment · CPC title

• C01B32/164

  involving continuous processes · CPC title

• C01B2202/08

  Aligned nanotubes · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title