Tunable laser with directional coupler

Patent metadata

Field	Value
Publication number	US-9774164-B2
Application number	US-201514982902-A
Country	US
Kind code	B2
Filing date	Dec 29, 2015
Priority date	Mar 7, 2014
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

A tunable laser has a first mirror, a second mirror, a gain medium, and a directional coupler. The first mirror and the second mirror form an optical resonator. The gain medium and the directional coupler are, at least partially, in an optical path of the optical resonator. The first mirror and the second mirror comprise binary super gratings. Both the first mirror and the second mirror have high reflectivity. The directional coupler provides an output coupler for the tunable laser.

First claim

What is claimed is:

1. A laser comprising:
an output;
a first reflective element;
a second reflective element;
a gain medium between the first reflective element and the second reflective element;
a coupler between the first reflective element and the second reflective element, the coupler comprising:
a first port;
a second port;
a third port; and
a core, configured to guide light, wherein the core forms at least a part of the first port, the second port, and the third port, such that light is coupled directly, not evanescently, in the core;

a first waveguide optically coupling the first port with the gain medium;
a second waveguide optically coupling the second port with the second reflective element; and
a third waveguide optically coupling the third port with the output.

2. The laser as recited in claim 1 , wherein the first reflective element and/or the second reflective element is a tunable wavelength selective element.

3. The laser as recited in claim 1 , wherein the first reflective element and/or the second reflective element comprises a binary super grating.

4. The laser as recited in claim 1 , wherein the first reflective element and the second reflective element each have a reflectance value greater than 90%.

5. The laser as recited in claim 1 , wherein:
the first reflective element, the second reflective element, and the coupler comprise silicon; and
the gain medium comprises a III-V compound.

6. The laser as recited in claim 1 further comprising an optical sensor, wherein the optical sensor is optically coupled with a fourth port of the coupler.

7. The laser as recited in claim 1 , wherein the first reflective element, the second reflective element, the gain medium, and the coupler are disposed on a substrate.

8. The laser as recited in claim 1 , wherein the coupler has a core that has a thickness in a range from 0.5 μm and 2.5 μm.

9. The laser as recited in claim 1 , wherein:
the coupler further comprises:
a substrate; and
a cladding layer; and

the cladding layer is between the substrate and the core.

10. The laser as recited in claim 9 , wherein the substrate is crystalline silicon and the core is crystalline silicon.

11. The laser as recited in claim 9 , wherein:
the core comprises a shoulder and a ridge;
the shoulder extends from the first port to the second port and to the third port; and
the ridge extends from the first port to the second port and not to the third port.

12. A method for using a directional coupler to output light from a lasing cavity, the method comprising:
generating light with a gain medium;
guiding light from the gain medium to a first reflective element;
guiding light from the gain medium to a first port of a coupler;
guiding light from a second port of the coupler to a second reflective element;
coupling light from the first port to the third port using a core of the directional coupler, wherein:
the core is configured to guide light; and
the core forms at least part of the first port, the second port, and the third port, such that light is coupled directly, not evanescently, from the first port to the third port; and

guiding light from a third port of the coupler to an output of a laser.

13. The method for using a directional coupler as recited in claim 12 wherein:
the coupler comprises:
a substrate; and
a cladding layer; and

the cladding layer is between the substrate and the core.

14. The method as recited in claim 13 , wherein the substrate is crystalline silicon and the core is crystalline silicon.

15. The method as recited in claim 13 , wherein:
the core comprises a shoulder and a ridge;
the shoulder extends from the first port to the second port and to the third port; and
the ridge extends from the first port to the second port and not to the third port.

16. The method as recited in claim 13 , wherein the first reflective element, the second reflective element, the coupler, and the gain medium are disposed on a substrate.

17. The method as recited in claim 13 , wherein the first reflective element and/or the second reflective element is a wavelength selective elements that is tunable.

18. A directional coupler for providing output of a semiconductor laser, the directional coupler comprising:
a substrate;
a cladding;
a core, wherein:
the cladding is between the substrate and the core; and
the core forms:
a first port optically coupled with a gain medium;
a second port optically coupled with a reflective element; and
a third port optically coupled with a laser output, wherein the core is configured to couple light directly, not evanescently, from the first port to the third port.

19. The directional coupler as recited in claim 18 , wherein the substrate is crystalline silicon and the core is crystalline silicon.

20. The directional coupler as recited in claim 18 , wherein:
the core comprises a shoulder and a ridge;
the shoulder extends from the first port to the second port and to the third port; and
the ridge extends from the first port to the second port and not to the third port.

Assignees

• Skorpios Tech Inc

Inventors

• Chaouch Hacene
• Li Guoliang

Classifications

• G02B2006/12147

  Coupler · CPC title

• G02B6/1228

  Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

• H01S3/0315

  Waveguide lasers · CPC title

• H01S5/021

  Silicon based substrates · CPC title

• H01S5/3013

  AIIIBV compounds · CPC title