Epitaxial wafer and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9773932-B2
Application number	US-201415028225-A
Country	US
Kind code	B2
Filing date	Aug 18, 2014
Priority date	Oct 22, 2013
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×10 15 cm −3 .

First claim

The invention claimed is:

1. An epitaxial wafer comprising:
a III-V semiconductor substrate; and
a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer, wherein sulfur, selenium, and tellurium are contained as impurities,
wherein a total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×10 15 cm −3 , and
wherein the multiple quantum well structure contains antimony as a constituent element thereof.

2. The epitaxial wafer according to claim 1 , wherein silicon, germanium, and tin are further contained as impurities, and a total concentration of sulfur, selenium, tellurium, silicon, germanium, and tin contained as impurities is less than or equal to 5×10 15 cm −3 .

3. The epitaxial wafer according to claim 1 , wherein
the substrate comprises InP, and
in the multiple quantum well structure, the first layer comprises a semiconductor that contains at least Ga, As, and Sb, and the second layer comprises a semiconductor that contains at least In, Ga, and As.

4. The epitaxial wafer according to claim 1 , further comprising:
a first conductivity type III-V semiconductor layer disposed on a side, facing the substrate, of the multiple quantum well structure; and
a second conductivity type III-V semiconductor layer disposed on the multiple quantum well structure.

5. A photodiode manufactured by using the epitaxial wafer according to claim 1 .

6. The epitaxial wafer according to claim 1 , wherein the antimony is contained as a constituent element in only the first layer, and an aggregate concentration of sulfur, selenium, tellurium, silicon, germanium, and tin contained as impurities in the first layer is less than or equal to 1×10 16 cm −3 .

7. The epitaxial wafer according to claim 6 , wherein the total concentration of sulfur, selenium, tellurium, silicon, germanium, and tin contained as impurities in the second layer is less than or equal to 1×10 15 cm −3 .

8. The epitaxial wafer according to claim 1 , further comprising:
a diffusive-concentration-distribution-adjusting layer disposed on the multiple quantum well structure, and comprising a III-V semiconductor; and
a window layer disposed on the diffusive-concentration-distribution-adjusting layer, and comprising a III-V semiconductor.

9. The epitaxial wafer according to claim 8 , wherein the window layer comprises InP, and a regrown interface on which at least one of oxygen, carbon, and hydrogen is accumulated is absent at a boundary portion between the InP window layer and a layer beneath the InP window layer.

10. A method for manufacturing an epitaxial wafer on a III-V semiconductor substrate, comprising the steps of;
growing a III-V semiconductor buffer layer on the substrate; and
growing a multiple quantum well structure comprising a III-V semiconductor on the buffer layer, wherein sulfur, selenium, and tellurium are contained as impurities, and wherein the multiple quantum well structure contains antimony as a constituent element thereof,
wherein in the step of growing the multiple quantum well structure, the multiple quantum well structure is grown by metal-organic vapor phase epitaxy so that a total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×10 15 cm −3 .

11. The method for manufacturing the epitaxial wafer according to claim 10 , wherein, in the step of growing the multiple quantum well structure, a metal-organic source in which a total concentration of sulfur, selenium, tellurium, silicon, germanium, and tin is less than or equal to 0.5 ppm is used as a source of antimony used for the metal-organic vapor phase epitaxy.

Assignees

• Sumitomo Electric Industries

Inventors

• Fujii Kei
• Nishizuka Koji
• Kyono Takashi
• Shibata Kaoru
• Akita Katsushi

Classifications

• H10P14/3421

  Arsenides · CPC title

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title

• H10P14/3222

  Antimonides · CPC title

• H10P14/3221

  Arsenides · CPC title

• H10P14/3218

  Phosphides · CPC title