Optoelectronic component and method for producing same
US-12176444-B2 · Dec 24, 2024 · US
US9773750B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9773750-B2 |
| Application number | US-201313749647-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 24, 2013 |
| Priority date | Feb 9, 2012 |
| Publication date | Sep 26, 2017 |
| Grant date | Sep 26, 2017 |
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Official abstract text for this publication.
Electrostatic transfer head array assemblies and methods of transferring and bonding an array of micro devices to a receiving substrate are described. In an embodiment, a method includes picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads, contacting a receiving substrate with the array of micro devices, transferring energy from the electrostatic transfer head assembly to bond the array of micro devices to the receiving substrate, and releasing the array of micro devices onto the receiving substrate.
Opening claim text (preview).
What is claimed is: 1. A method comprising: picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads; contacting a micro device bonding layer with a receiving substrate bonding layer on a receiving substrate for each respective micro device, wherein each receiving substrate bonding layer has a lower ambient liquidus temperature than a respective micro device bonding layer, and each receiving substrate bonding layer is characterized by a width extending in a direction parallel to a corresponding micro device bonding layer contact surface that contacts the receiving substrate bonding layer in which each micro device bonding layer contact surface is wider than each receiving substrate bonding layer; transferring thermal energy from the electrostatic transfer head assembly, liquefying the receiving substrate bonding layers, and bonding the array of micro devices to the receiving substrate; releasing the array of micro devices onto the receiving substrate; wherein each micro device has a maximum width of 1-100 μm parallel to a contact surface of the array of electrostatic transfer heads for picking up the array of micro devices; wherein the array of electrostatic transfer heads includes an array of mesa structures protruding from a base substrate supporting the array of electrostatic transfer heads, with each mesa structure corresponding to a separate electrostatic transfer head, and each electrostatic transfer head has a contact surface for picking up a single micro device and each electrostatic transfer head contact surface has a maximum width of 1-100 μm; wherein a substrate supporting the array of electrostatic transfer heads is maintained above room temperature during the sequence of: picking up the array of micro devices from the carrier substrate with the electrostatic transfer head assembly supporting the array of electrostatic transfer heads; contacting the micro device bonding layer with the receiving substrate bonding layer on the receiving substrate for each respective micro device; transferring thermal energy from the electrostatic transfer head assembly to liquefy the receiving substrate bonding layers, and bonding the array of micro devices to the receiving substrate; and releasing the array of micro devices onto the receiving substrate; and wherein the substrate supporting the array of electrostatic transfer heads is maintained above the ambient liquidus temperature of the receiving substrate bonding layers and below the ambient liquidus temperature of the micro device bonding layers. 2. The method of claim 1 , wherein each electrostatic transfer head contact surface has a maximum width of 3-20 μm.
Means for applying energy, e.g. ovens or lasers · CPC title
Thermally treating (reflowing H10W72/01357) · CPC title
Connecting techniques · CPC title
Soldering or alloying · CPC title
Compression bonding, e.g. thermocompression bonding · CPC title
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