Atomic layer or cyclic plasma etching chemistries and processes

Patent metadata

Field	Value
Publication number	US-9773683-B2
Application number	US-201514730917-A
Country	US
Kind code	B2
Filing date	Jun 4, 2015
Priority date	Jun 9, 2014
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

Atomic layer or cyclic plasma etching chemistries and processes to etch films are disclosed. Films include Si, Ti, Ta, W, Al, Pd, Ir, Co, Fe, B, Cu, Ni, Pt, Ru, Mn, Mg, Cr, Au, alloys thereof, oxides thereof, nitrides thereof, and combinations thereof.

First claim

We claim:

1. A method of removing a material from a substrate, the method comprising:
(a) introducing a vapor of a halide-containing compound into a chamber containing the substrate having the material disposed thereon;
(b) igniting a plasma in the chamber;
(c) purging the chamber;
(d) introducing a vapor of a volatile organic compound into the chamber; and
(e) purging the chamber,

wherein the volatile organic compound is selected from the group consisting of N,N′-bis(1-methylethyl)-ethanimidiamide (CAS 106500-93-0), methanol, ethanol, isopropanol, acetic acid, 4-ethylamino-pent-3-en-2-one, N,N-diethylpentadiamine, bis(trimethylsilyl)amide, and bis(silyl)amide having the formula R 3 SiNHSiR 3 , wherein each R is independently selected from a C1 to C5 alkyl group.

2. The method of claim 1 , further comprising repeating steps (a) through (e).

3. The method of claim 1 , further comprising igniting a plasma after introduction of the vapor of the volatile organic compound.

4. The method of claim 3 , further comprising repeating the halide-containing compound introduction, ignition, purging, volatile organic compound introduction, ignition, and purging steps.

5. The method of claim 1 , wherein the material is selected from the group consisting of Ti, Ta, W, Al, Pd, Ir, Co, Fe, B, Cu, Ni, Pt, Ru, Mn, Mg, Cr, Au, alloys thereof, oxides thereof, nitrides thereof, and combinations thereof.

6. The method of claim 1 , wherein the halide-containing compound is selected from the group consisting of F 2 , Cl 2 , Br 2 , I 2 , FCl, ClF 3 , BCl 3 , BBr 3 , BF 3 , Bl 3 , HCl, HBr, HI, CF 4 , CH 2 F 2 , CHF 3 , CF 3 I, CF 3 Br, FNO, NF 3 , SOCl 2 , SO 2 Cl 2 , and combinations thereof.

7. The method of claim 1 , wherein the volatile organic compound is N,N′-bis(1-methylethyl)-ethanimidiamide (CAS 106500-93-0).

8. The method of claim 1 , wherein the volatile organic compound is selected from the group consisting of methanol, ethanol, and isopropanol.

9. The method of claim 1 , wherein the volatile organic compound is acetic acid.

10. The method of claim 1 , wherein the volatile organic compound is 4-ethylamino-pent-3-en-2-one.

11. The method of claim 1 , wherein the volatile organic compound is N,N-diethylpentadiamine.

12. The method of claim 1 , wherein the volatile organic compound has the formula R 3 Si—NH—SiR 3 , wherein each R is independently selected from a C1 to C5 alkyl group.

13. The method of claim 12 , wherein the volatile organic compound is bis(trimethylsilyl)amide.

14. The method of claim 1 , wherein performing steps (a) through (e) one time removes one atomic layer of the material.

Assignees

• Air Liquide American

Inventors

• Gupta Rahul
• Pallem Venkateswara R
• Jurcik Jr Benjamin J

Classifications

• H10P50/267 Primary

  using plasmas · CPC title

• H01L43/12

  Electricity · mapped topic

• H01J2237/334

  Etching · CPC title

• C23F4/00

  Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 · CPC title

• H01L21/32136 Primary

  Electricity · mapped topic