Integrated stacked transformer

Patent metadata

Field	Value
Publication number	US-9773606-B2
Application number	US-201514690477-A
Country	US
Kind code	B2
Filing date	Apr 20, 2015
Priority date	Apr 23, 2014
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

An integrated stacked transformer includes a primary inductor and a secondary inductor, and the primary inductor includes at least a first turn and a second turn, and is at least formed by a plurality of windings of a first metal layer and a second metal layer, wherein the first metal layer and the second metal layer are two adjacent metal layers, and the second turn of the primary inductor is disposed inside the first turn; the secondary inductor includes at least a first turn, and the secondary inductor is at least formed by at least one winding formed by the second metal layer, wherein the first turn of the secondary inductor substantially overlaps the first turn of the primary inductor; wherein the second turn of the primary inductor includes a segment of a parallel connection structure constructed by the first metal layer and the second metal layer.

First claim

What is claimed is:

1. An integrated stacked transformer, comprising:
a primary inductor, wherein the primary inductor comprises at least a first turn and a second turn, and the primary inductor is at least formed by a plurality of windings of a first metal layer and a second metal layer, and the second turn of the primary inductor is disposed inside the first turn; and
a secondary inductor, wherein the secondary inductor comprises at least a first turn, and the secondary inductor is at least formed by at least one winding of the second metal layer, and the first turn of the secondary inductor and the first turn of the primary inductor are substantially overlapped;
wherein the second turn of the primary inductor comprises a parallel connection structure formed by a segment of the first metal layer and a segment of the second metal layer, and the segment of the first metal layer and the segment of the second metal layer are overlapped.

2. The integrated stacked transformer of claim 1 , wherein the primary inductor is symmetric, and except areas around bridges, the first turn of the primary inductor is substantially formed by the first metal layer, and the second turn of the primary inductor is a parallel connection structure constructed by the first metal layer and the second metal layer.

3. The integrated stacked transformer of claim 1 , wherein the integrated stacked transformer is formed by only the first metal layer and the second metal layer without other metal layers.

4. The integrated stacked transformer of claim 1 , wherein the primary inductor further comprises a third turn, and the third turn of the primary inductor is disposed inside the second turn; and the secondary inductor further comprises a second turn, and the second turn of the secondary inductor is disposed inside the first turn.

5. The integrated stacked transformer of claim 4 , wherein except areas around bridges, the third turn of the primary inductor and the second turn of the secondary inductor are substantially only formed by the second metal layer.

6. The integrated stacked transformer of claim 4 , wherein the secondary inductor further comprises a third turn, and the third turn of the secondary inductor is disposed inside the second turn, and the third turn of the secondary inductor is substantially formed by the first metal layer, and at least a portion of the third turn of the secondary inductor overlaps at least a portion of the third turn of the primary inductor.

7. The integrated stacked transformer of claim 4 , wherein except areas around bridges, the second turn of the secondary inductor comprises a segment of a parallel connection structure formed by the first metal layer and the second metal layer.

8. The integrated stacked transformer of claim 4 , wherein except areas around bridges, the second turn of the secondary inductor is formed by a helical connection of the first metal layer and the second metal layer.

9. The integrated stacked transformer of claim 4 , the secondary inductor further comprises a third turn, and the third turn of the secondary inductor is disposed inside the second turn, and the third turn of the primary inductor is disposed between the second turn and the third turn of the secondary inductor.

10. The integrated stacked transformer of claim 9 , wherein except areas around bridges, the third turn of the primary inductor and the second turn, the third turn of the secondary inductor are substantially only formed by the second metal layer.

11. The integrated stacked transformer of claim 1 , wherein a center of either the primary inductor or the secondary inductor is connected to a center tap, and the center tap is formed by a third metal layer.

12. The integrated stacked transformer of claim 1 , wherein the first metal layer is re-distribution layer, and the second metal layer is ultra-thick metal layer.

13. The integrated stacked transformer of claim 1 , wherein the primary inductor and the secondary inductor form a mutual inductance by a vertical coupling, a diagonal coupling and a horizontal coupling.

Assignees

• Realtek Semiconductor Corp

Inventors

• Yen Hsiao-Tsung
• Jean Yuh-Sheng
• Yeh Ta-Hsun

Classifications

• H01F2027/2809

  on stacked layers · CPC title

• H01F5/00

  Coils (superconducting coils H01F6/06; fixed inductances of the signal type H01F17/00) · CPC title

• H01F27/2804 Primary

  Printed windings · CPC title

• H01F19/04

  Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range (resonant circuits H03H) · CPC title