Storage device head using high magnetic moment material including a rare earth material and a transition metal

Patent metadata

Field	Value
Publication number	US-9773512-B2
Application number	US-201514975214-A
Country	US
Kind code	B2
Filing date	Dec 18, 2015
Priority date	Dec 19, 2014
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

A write pole structure includes a write pole and a trailing shield wherein the write pole includes a high magnetic moment (HMM) material layer on a surface of the write pole facing the trailing shield, wherein the HMM material layer includes a laminated layer including a rare earth material layer and a transition metal layer.

First claim

What is claimed is:

1. A write pole structure comprising:
a write pole;
a trailing shield;
a first high magnetic moment (HMM) material layer on a surface of the write pole facing the trailing shield, the first HMM material layer not being in physical contact with the trailing shield, wherein the first HMM material layer includes a first laminated layer including a rare earth material layer and a transition metal layer;
a second HMM material layer on a surface of the trailing shield facing the write pole, the second HMM material layer not being in physical contact with the write pole, wherein the second HMM material layer includes a second laminated layer including another rare earth material layer and another transition metal layer, the first HMM material layer and the second HMM material layer being separated by a gap.

2. The write pole structure of claim 1 , wherein:
the first laminated layer further comprises a first intermediate layer between the rare earth material layer and the transition metal layer, wherein the first intermediate layer is made of a transition metal that can mediate RKKY coupling effect.

3. The write pole structure of claim 2 , wherein the intermediate layer has a thickness of less than three atoms of the transition metal that can mediate RKKY coupling effect.

4. The write pole structure of claim 2 , wherein the transition metal that can mediate RKKY coupling effect is any d-block transition metal.

5. The write pole structure of claim 2 , wherein the transition metal that can mediate RKKY coupling effect is at least one of palladium (Pd) and manganese (Mn).

6. The write pole structure of claim 2 , wherein the transition metal that can mediate RKKY coupling effect is an alloy of at least one of d-block transition metals.

7. The write pole structure of claim 1 , wherein thickness of the rare earth material layer is between 5 nm and 100 nm.

8. The write pole structure of claim 1 , wherein thickness of the transition metal layer is between 5 nm and 100 nm.

9. The write pole structure of claim 1 , wherein the rare earth material layer comprises at least one of terbium (Tb), gadolinium (Gd), and dysprosium (Dy).

10. The write pole structure of claim 1 , wherein the transition metal layer comprises at least one of iron (Fe) and iron-cobalt (FeCo).

11. The write pole structure of claim 1 , wherein the second laminated layer includes a second intermediate layer between the another rare earth material layer and the another transition metal layer, wherein the second intermediate layer is made of another transition metal layer that can mediate RKKY coupling effect.

12. An apparatus comprising:
a trailing shield including a first plurality of laminated layers, each of the first plurality of laminated layers including a rare earth material layer and a transition metal layer; and
a write pole, wherein the write pole is made of a second plurality of laminated layers, each of the second plurality of laminated layers including a rare earth material layer and a transition metal layer;
wherein the first plurality of laminated layers is not in physical contact with the second plurality of laminated layers.

13. The apparatus of claim 12 wherein each of the plurality of laminated layers further comprises an intermediate layer between the rare earth material layer and the transition metal layer, wherein the intermediate layer is made of at least one of a d-block transition metal and an alloy of a d-block transition metal.

14. The apparatus of claim 13 wherein the intermediate layer has a thickness equivalent to at least one of one atom, three atoms, and five atoms.

15. The apparatus of claim 12 wherein the rare earth material layer comprises at least one of terbium (Tb), gadolinium (Gd), and dysprosium (Dy).

16. The apparatus of claim 12 wherein the transition metal layer comprises at least one of iron (Fe) and iron-cobalt (FeCo).

17. The apparatus of claim 12 wherein thickness of the rare earth material layer is between 5 nm and 100 nm and wherein thickness of the transition metal layer is between 5 nm and 100 nm.

18. A magnetoresistive sensor, comprising:
a reader sensor structure including one or more side shields, a top shield, and a bottom shield, wherein the top shield, the bottom shield, and at least one of the one or more side shields includes a plurality of laminated layers, each of the plurality of laminated layers including a rare earth material layer and a transition metal layer.

19. The magnetoresistive sensor of claim 18 , further comprising a write pole structure including another plurality of laminated layers, each of the another plurality of laminated layers including another rare earth material layer and another transition metal layer.

Assignees

• Seagate Technology Llc

Inventors

• Gubbins Mark Anthony
• Venugopal Vijayaharan A
• Mooney Marcus Benedict
• Lapicki Adam Andrzej
• Bashir Muhammad Asif
• Gangmei Prim

Classifications

• G11B5/3912

  Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

• G11B5/3143

  including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding (G11B5/3116, G11B5/312 take precedence) · CPC title

• G11B5/3116 Primary

  Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks (G11B5/3113, G11B5/245 take precedence) · CPC title

• G11B5/3906

  Details related to the use of magnetic thin film layers or to their effects · CPC title