Cascode power amplifier stage using HBT and FET

Patent metadata

Field	Value
Publication number	US-9768744-B1
Application number	US-201514957023-A
Country	US
Kind code	B1
Filing date	Dec 2, 2015
Priority date	Dec 3, 2014
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

A power amplifier comprising a bipolar transistor connected in cascode with a field effect transistor (FET) such as a pseudomorphic high electron mobility transistor (PHEMT) device. The bipolar transistor has a common emitter and the FET a common gate. Advantageously, the bipolar transistor is a heterojunction bipolar transistor (HBT); and the HBT and the FET may be integrated on a single die. Illustrative materials for the HBT and FET are Gallium Nitride, Indium Phosphide, or Gallium Arsenide/Indium Gallium Phosphide.

First claim

What is claimed is:

1. A power amplifier comprising:
a heterojunction bipolar transistor;
a field effect transistor connected in cascode; and
a harmonic trap between the heterojunction bipolar transistor and the field effect transistor.

2. The power amplifier of claim 1 wherein the heterojunction bipolar transistor and the field effect transistor are formed in a Gallium Nitride semiconductor crystal.

3. The power amplifier of claim 1 wherein the heterojunction bipolar transistor and the field effect transistor are formed in an Indium Phosphide semiconductor crystal.

4. The power amplifier of claim 1 wherein the heterojunction bipolar transistor is formed in a Silicon Germanium semiconductor crystal.

5. The power amplifier of claim 1 wherein the heterojunction bipolar transistor has a common emitter and the field effect transistor has a common gate.

6. The power amplifier of claim 1 wherein the field effect transistor is a high electron mobility transistor device.

7. The power amplifier of claim 1 wherein the field effect transistor is a pseudomorphic high electron mobility transistor device.

8. The power amplifier of claim 1 wherein the field effect transistor is a metal-semiconductor field effect transistor device.

9. The power amplifier of claim 1 wherein the heterojunction bipolar transistor and the field effect transistor are integrated on a single die.

10. The power amplifier of claim 9 wherein the single die is formed by an epitaxial growth process.

11. A power amplifier comprising:
a bipolar transistor;
a field effect transistor connected in cascode with the bipolar transmitter having a common emitter and the field effect transistor a common gate; and
a harmonic trap between the bipolar transistor and the field effect transistor.

12. The power amplifier of claim 11 wherein the bipolar transistor is a heterojunction bipolar transistor formed in a Gallium Nitride or Indium Phosphide semiconductor crystal.

13. The power amplifier of claim 11 wherein the bipolar transistor is a heterojunction bipolar transistor formed in a Silicon Germanium semiconductor crystal.

14. The power amplifier of claim 11 wherein the bipolar transistor is a Silicon bipolar transistor.

15. The power amplifier of claim 11 wherein the field effect transistor is formed in a Gallium Nitride or Indium Phosphide semiconductor crystal.

16. The power amplifier of claim 11 wherein the field effect transistor is a high electron mobility transistor (HEMT) device.

17. The power amplifier of claim 11 wherein the field effect transistor is a pseudomorphic high electron mobility transistor device.

18. The power amplifier of claim 11 wherein the field effect transistor is a metal-semiconductor field effect transistor device.

19. The power amplifier of claim 11 wherein the bipolar transistor is a heterojunction bipolar transistor and the heterojunction bipolar transistor and the field effect transistor are integrated on a single die.

20. The power amplifier of claim 19 wherein the single die is formed by an epitaxial growth process.

21. A power amplifier comprising:
a heterojunction bipolar transistor;
a pseudomorphic high electron mobility transistor connected in cascode; and
a harmonic trap between the heterojunction bipolar transistor and the pseudomorphic high electron mobility transistor.

22. The power amplifier of claim 21 wherein the heterojunction bipolar transistor has a common emitter and the pseudomorphic high electron mobility transistor has a common gate.

23. The power amplifier of claim 1 further comprising an additional harmonic trap between an input impedance matching network and the heterojunction bipolar transistor.

24. The power amplifier of claim 1 further comprising an additional harmonic trap between the field effect transistor and an output port.

25. The power amplifier of claim 11 further comprising an additional harmonic trap between an input impedance matching network and the bipolar transistor.

26. The power amplifier of claim 11 further comprising an additional harmonic trap between the field effect transistor and an output port.

27. The power amplifier of claim 21 further comprising an additional harmonic trap between an input impedance matching network and the heterojunction bipolar transistor.

28. The power amplifier of claim 21 further comprising an additional harmonic trap between the pseudomorphic high electron mobility transistor and an output port.

Assignees

• Skyworks Solutions Inc

Inventors

• Arell Thomas William

Classifications

• H03F3/1935

  with junction-FET devices · CPC title

• H03F1/226

  with junction-FET's · CPC title

• H03F1/223

  with MOSFET's · CPC title

• H03F3/193 Primary

  with field-effect devices (H03F3/195 takes precedence) · CPC title

• H03F1/42

  Modifications of amplifiers to extend the bandwidth · CPC title