Optoelectronic component and method of producing an optoelectronic component

Patent metadata

Field	Value
Publication number	US-9768360-B2
Application number	US-201615265487-A
Country	US
Kind code	B2
Filing date	Sep 14, 2016
Priority date	Dec 18, 2009
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

First claim

What is claimed is:

1. An optoelectronic component comprising:
at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during, operation, and
a sealing material directly applied by atomic layer deposition,
wherein the semiconductor component is applied on a carrier,
the carrier comprises electrical connection layers,
the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and
the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element, and all exposed surfaces of the carrier including the electrical connection layers apart from an electrical connection region of the carrier, and
wherein a bottom exposed surface of the carrier directly overlaps with an exposed upper surface of the electrical connection layer that is not covered by the sealing material.

2. The component according to claim 1 , wherein the semiconductor component is applied with a mounting area on the carrier.

3. The component according to claim 1 , wherein the semiconductor component and the sealing material are at least partly enclosed with a housing material.

4. The component according to claim 1 , wherein the optoelectronic component has a plurality of semiconductor components, and the sealing material is applied on at least one surface region of each of the plurality of semiconductor components.

5. The component according to claim 1 , wherein the semiconductor component has at least one micro-opening in at least one surface region, and the sealing material seals the micro-opening.

6. The component according to claim 5 , wherein the surface region having the at least one micro-opening is part of a surface of a substrate and/or of an epitaxially grown layer of a semiconductor layer sequence.

7. The component according to claim 5 , wherein the semiconductor component has a passivation layer and/or a growth protection layer, and
the surface region having the at least one micro-opening is part of a surface of the passivation layer and/or of the growth protection layer.

8. The component according to claim 1 , wherein a surface of the semiconductor component is at least partly shaded.

9. A method of producing the optoelectronic component according to claim 1 comprising a semiconductor component comprising:
applying the sealing material to a semiconductor layer assemblage by atomic layer deposition, and
singulating the semiconductor layer assemblage into a plurality of semiconductor components.

10. A method of producing the optoelectronic component according to claim 1 comprising a semiconductor component, comprising:
mounting the semiconductor component on a carrier, and
depositing the sealing material by atomic layer deposition.

11. An optoelectronic component comprising:
a plurality of inorganic optoelectronically active semiconductor components, each of the plurality of inorganic optoelectronically active semiconductor components having an active region that emits or receives light during operation, and
a sealing material directly applied by atomic layer deposition,
wherein the each of the plurality of inorganic optoelectronically active semiconductor components is applied on a carrier,
the carrier comprises electrical connection layers,
each of the plurality of inorganic optoelectronically active semiconductor components electrically connects to one of the electrical connection layers via an electrical contact element, and
the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of each of the plurality of inorganic optoelectronically active semiconductor components and the electrical contact elements and all exposed surfaces of the carrier including the electrical connection layers apart from an electrical connection region of the carrier, and
wherein a bottom exposed surface of the carrier directly overlaps with an exposed upper surface of the electrical connection layer that is not covered by the sealing material.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Fehrer Michael
• Lell Alfred
• Müller Martin
• Schlenker Tilman
• Tautz Sönke
• Strauβ Uwe

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/22

  the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/01515

  Forming coatings · CPC title