Semiconductor device, manufacturing method of semiconductor device, and electronic device

Patent metadata

Field	Value
Publication number	US-9768317-B2
Application number	US-201514961016-A
Country	US
Kind code	B2
Filing date	Dec 7, 2015
Priority date	Dec 8, 2014
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

Provided is a semiconductor device which can suppress an increase in oxygen vacancies in an oxide semiconductor layer and a manufacturing method of the semiconductor device. The semiconductor device includes a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer; a fourth semiconductor layer over the source and drain electrode layers, and the third oxide semiconductor layer; a gate insulating layer over the fourth oxide semiconductor layer; a gate electrode layer over the gate electrode layer and overlapping with the source and drain electrode layers, and the fourth oxide semiconductor layer; and a second insulating layer over the first insulating layer, and the source, gate, and drain electrode layers.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first insulating layer;
a first oxide semiconductor layer over the first insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a third oxide semiconductor layer over the second oxide semiconductor layer;
a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer;
a fourth oxide semiconductor layer over the source electrode layer, the drain electrode layer, and the third oxide semiconductor layer;
a gate insulating layer over the fourth oxide semiconductor layer;
a gate electrode layer over the gate insulating layer and overlapping with the source electrode layer, the drain electrode layer, and the fourth oxide semiconductor layer; and
a second insulating layer over the first insulating layer, the source electrode layer, the gate electrode layer, and the drain electrode layer,
wherein the fourth oxide semiconductor layer is in contact with a side surface of the first oxide semiconductor layer, a side surface of the second oxide semiconductor layer and a side surface of the third oxide semiconductor layer in a channel width direction,
wherein an indium content of the third oxide semiconductor layer is higher than an indium content of the second oxide semiconductor layer, and
wherein oxygen is added to the first oxide semiconductor layer.

2. The semiconductor device according to claim 1 , wherein the second insulating layer has a barrier property against water, hydrogen, and oxygen.

3. The semiconductor device according to claim 1 , wherein the second insulating layer is capable of supplying oxygen.

4. The semiconductor device according to claim 1 , wherein the second insulating layer comprises aluminum oxide.

5. An electronic device comprising the semiconductor device according to claim 1 ,
wherein the semiconductor device further comprises a microphone, a speaker, and a housing.

6. A semiconductor device comprising:
a first insulating layer;
a first oxide semiconductor layer over the first insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a third oxide semiconductor layer over the second oxide semiconductor layer;
a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer;
a fourth oxide semiconductor layer over the source electrode layer, the drain electrode layer, and the third oxide semiconductor layer;
a gate insulating layer over the fourth oxide semiconductor layer;
a gate electrode layer over the gate insulating layer and overlapping with the source electrode layer, the drain electrode layer, and the fourth oxide semiconductor layer;
an intermediate layer over the first insulating layer, the source electrode layer, the gate electrode layer, and the drain electrode layer; and
a second insulating layer over the first insulating layer and the intermediate layer,
wherein the intermediate layer surrounds an outer periphery of each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer,
wherein the fourth oxide semiconductor layer is in contact with a side surface of the first oxide semiconductor layer, a side surface of the second oxide semiconductor layer and a side surface of the third oxide semiconductor layer in a channel width direction,
wherein an indium content of the third oxide semiconductor layer is higher than an indium content of the second oxide semiconductor layer, and
wherein oxygen is added to the first oxide semiconductor layer.

7. The semiconductor device according to claim 6 , wherein the second insulating layer has a barrier property against water, hydrogen, and oxygen.

8. The semiconductor device according to claim 6 , wherein the second insulating layer is capable of supplying oxygen.

9. The semiconductor device according to claim 6 , wherein the second insulating layer comprises aluminum oxide.

10. The semiconductor device according to claim 6 , wherein the intermediate layer has a barrier property against water, hydrogen, and oxygen.

11. The semiconductor device according to claim 6 , wherein the intermediate layer comprises any one of aluminum oxide, hafnium oxide, zirconium oxide, titanium oxide, zinc oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, silicon oxide, manganese oxide, nickel oxide, erbium oxide, cobalt oxide, tellurium oxide, barium titanate, titanium nitride, tantalum nitride, aluminum nitride, tungsten nitride, cobalt nitride, silicon nitride, manganese nitride, and hafnium nitride.

12. An electronic device comprising the semiconductor device according to claim 6 ,
wherein the semiconductor device further comprises a microphone, a speaker, and a housing.

13. The semiconductor device according to claim 1 ,
wherein adding oxygen is performed by an ion doping method, an ion implantation method, or a plasma immersion ion implantation method.

14. The semiconductor device according to claim 6 ,
wherein adding oxygen is performed by an ion doping method, an ion implantation method, or a plasma immersion ion implantation method.

Assignees

• Semiconductor Energy Lab

Inventors

• Ito Daigo
• Ishiyama Takahisa
• Hanaoka Kazuya

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P50/69

  using masks for semiconductor materials · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title