Devices having transition metal dichalcogenide layers with different thicknesses and methods of manufacture

Patent metadata

Field	Value
Publication number	US-9768313-B2
Application number	US-201514874879-A
Country	US
Kind code	B2
Filing date	Oct 5, 2015
Priority date	Oct 5, 2015
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

An embodiment is a structure including a first active device in a first region of a substrate, the first active device including a first layer of a two-dimensional (2-D) material, the first layer having a first thickness, and a second active device in a second region of the substrate, the second active device including a second layer of the 2-D material, the second layer having a second thickness, the 2-D material including a transition metal dichalcogenide (TMD), the second thickness being different than the first thickness.

First claim

What is claimed is:

1. A method comprising:
depositing a transition metal dichalcogenide (TMD) material onto a substrate;
etching a trench in the TMD material to form a first plurality of TMD sublayers and a second plurality of TMD sublayers having the same number of sublayers;
forming a mask layer over the second plurality of TMD sublayers, the first plurality of TMD sublayers being exposed through the mask layer;
removing one or more of a first number of sublayers from the first plurality of TMD sublayers; removing the mask layer;
removing one or more of a second number of sublayers from the second plurality of TMD sublayers, the second number different from the first number;
forming a first gate stack over the remaining first plurality of TMD sublayers; and
forming a second gate stack over the remaining second plurality of TMD sublayers.

2. The method of claim 1 , wherein the depositing the transition metal dichalcogenide (TMD) material further comprises depositing a plurality of stacked, horizontally orientated TMD sublayers.

3. The method of claim 2 , wherein the removing one or more of a second number of layers from the second plurality of TMD sublayers comprises:
forming a second mask layer over the first plurality of TMD sublayers with the second plurality of TMD sublayers being exposed through the second mask layer; and
removing more than one of the second plurality of TMD sublayers in a sublayer-by-sublayer process.

4. The method of claim 3 , further comprising:
forming isolation regions surrounding sidewalls of the first plurality of TMD sublayers and the second plurality of TMD sublayers;
performing a first plasma treatment to form a defect in a first TMD sublayer of the second plurality of TMD sublayers, the first TMD sublayer being a topmost TMD sublayer of the second plurality of TMD sublayers; and
performing a first etch process to laterally etch the defected first TMD sublayer of the second plurality of TMD sublayers starting at the defect, the first etch process removing the first TMD sublayer of the second plurality of TMD sublayers and stopping on a top surface of a second TMD sublayer of the second plurality of TMD sublayers, the second TMD sublayer being a nearest underlying TMD sublayer of the second plurality of TMD sublayers.

5. The method of claim 4 , further comprising:
removing the second mask layer to expose the first plurality of TMD sublayers;
performing a second plasma treatment to form a defect in a third TMD sublayer of the first plurality of TMD sublayers and a defect in the second TMD sublayer of the second plurality of TMD sublayers, the third TMD sublayer being a topmost TMD sublayer of the first plurality of TMD sublayers; and
performing a second etch process to laterally etch the defected third TMD sublayer and the defected second TMD sublayer starting at the defects, the second etch process removing the third TMD sublayer and the second TMD sublayer and stopping on top surfaces of a fourth TMD sublayer of the first plurality of TMD sublayers and a fifth TMD sublayer of the second plurality of TMD sublayers, the fourth TMD sublayer being a nearest underlying TMD sublayer of the first plurality of TMD sublayers, the fifth TMD sublayer being a nearest underlying TMD sublayer of the second plurality of TMD sublayers.

6. A method comprising:
forming a plurality of transition metal dichalcogenide (TMD) layers over a substrate, each of the TMD layers having a major surface parallel to a major surface of the substrate;
etching a trench through the plurality of TMD layers to form a first plurality of TMD layers and a second plurality of TMD layers, the first plurality of TMD layers being on an opposite side of the trench than the second plurality of TMD layers;
depositing an insulating material in the trench to form an isolation region;
removing a first number of layers from the first plurality of TMD layers and a second number of layers from the second plurality of TMD layers, the first number being different than the second number;
forming a first gate stack on the remaining layers of the first plurality of TMD layers;
forming a second gate stack on the remaining layers of the second plurality of TMD layers;
forming a first conductive contact on the remaining layers of the first plurality of TMD layers;
forming a second conductive contact on the remaining layers of the second plurality of TMD layers; and
before removing the first number of layers from the first plurality of TMD layers and the second number of layers from the second plurality of TMD layers, planarizing the insulating material, wherein after the planarizing the insulating material, at least one of the first plurality of TMD layers or the second plurality of TMD layers has a sidewall exposed over a top surface of the insulating material.

7. The method of claim 6 , wherein the removing the first number of layers from the first plurality of TMD layers and the second number of layers from the second plurality of TMD layers further comprises:
forming a first mask layer over the first plurality of TMD layers with the second plurality of TMD layers being exposed through the first mask layer;
removing the second number of TMD layers from the second plurality of TMD layers in a layer-by-layer process;
removing the first mask layer;
forming a second mask layer over the remaining layers of the second plurality of TMD layers with the first plurality of TMD layers being exposed through the second mask layer;
removing the first number of TMD layers from the first plurality of TMD layers in a layer-by-layer process; and
removing the second mask layer.

8. The method of claim 6 , wherein the removing the first number of layers from the first plurality of TMD layers and the second number of layers from the second plurality of TMD layers further comprises:
forming a first mask layer over the first plurality of TMD layers with the second plurality of TMD layers being exposed through the first mask layer;
removing a third number of the TMD layers from the second plurality of TMD layers in a layer-by-layer process, the third number being a difference between the first number and the second number;
removing the first mask layer; and
removing the first number of TMD layers from the first plurality of TMD layers and the remaining layers of the second plurality of TMD layers in a layer-by-layer process.

9. The method of claim 6 , wherein the first conductive contact is contacting the remaining layers of the first plurality of TMD layers and the isolation region, and wherein the second conductive contact is contacting the remaining layers of the second plurality of TMD layers and the isolation region.

10. The method of claim 6 further comprising
removing the at least one of the first plurality of TMD layers or the second plurality of TMD layers with the exposed sidewall.

11. The method of claim 6 , wherein the TMD layers comprise MoS 2 , WS 2 , WSe 2 , MoSe 2 , MoTe 2 , WTe 2 , or a combination thereof.

12. A method comprising:
forming a first active device in a first region of a substrate, the first active device comprising a first layer of a two-dimensional (2-D) material, the first layer having a first thickness; and
forming a second active device in a second region of the substrate, the second active device comprising a second layer of the 2-D material, the second layer having a second thickness, the 2-D material comprising a transition metal dichalcogenide (TMD), the second thickness being different than the first thickness;
forming a first isolation region adjoining and between the first layer and the second layer of the 2-D material; and
recessing

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yeh Ling-Yen
• Wang Chao Hsiung
• Yeo Yee-Chia

Classifications

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H01L27/088

  Electricity · mapped topic

• H01L29/78618

  Electricity · mapped topic