Thin film transistor array substrate and organic light-emitting diode display

Patent metadata

Field	Value
Publication number	US-9768241-B2
Application number	US-201615064526-A
Country	US
Kind code	B2
Filing date	Mar 8, 2016
Priority date	Sep 19, 2012
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

A thin film transistor (TFT) array substrate includes: a substrate; a first insulation layer on the substrate; a capacitor including a lower electrode on the first insulation layer, and an upper electrode arranged to overlap with the whole lower electrode and having an opening, and the upper electrode is insulated from the lower electrode by a second insulation layer; an inter-layer insulation film covering the capacitor; a node contact hole in the inter-layer insulation film and the second insulation layer, and within the opening; and a connection node on the inter-layer insulation film and electrically coupling the lower electrode and at least one TFT to each other through the node contact hole.

First claim

What is claimed is:

1. A thin film transistor (TFT) array substrate comprising:
a substrate;
a capacitor on the substrate, and comprising a lower electrode, an upper electrode arranged to overlap with the lower electrode, and an insulation layer interposed between the lower electrode and the upper electrode, the upper electrode having an opening which has a shape of a simple closed curve in a top view; and
a connection node on the upper electrode and electrically coupling at least one TFT,
wherein an end portion of the connection node is coupled to the lower electrode through the opening.

2. The TFT array substrate of claim 1 , wherein the simple closed curve is a polygon.

3. The TFT array substrate of claim 1 , wherein the opening overlaps with the lower electrode.

4. The TFT array substrate of claim 1 , further comprising a node contact hole within the opening, wherein the connection node is coupled to the lower electrode via the node contact hole.

5. The TFT array substrate of claim 4 , wherein the size of the opening in the top view is greater than that of the node contact hole in the top view.

6. The TFT array substrate of claim 4 , further comprising an inter-layer insulation film disposed between the upper electrode and the connection node, wherein the node contact hole is defined in the insulation layer and the inter-layer insulation film.

7. The TFT array substrate of claim 4 , wherein a width of the opening is greater than that of the node contact hole.

8. The TFT array substrate of claim 1 , further comprising a driving TFT arranged to overlap with the capacitor,
wherein the lower electrode overlaps a driving semiconductor layer of the driving TFT.

9. A organic light-emitting diode (OLED) display comprising:
a pixel circuit comprising at least one thin film transistor (TFT) and a capacitor; and
an OLED for emitting light by receiving the driving voltage from the pixel circuit,
wherein the capacitor comprises a lower electrode, an upper electrode arranged to overlap with the lower electrode, and an insulation layer interposed between the lower electrode and the upper electrode, the upper electrode having an opening which has a shape of a simple closed curve in a top view, and
a connection node on the upper electrode, and electrically coupling the lower electrode and the at least one TFT to each other, an end portion of the connection node is coupled to the lower electrode through the opening.

10. The OLED display of claim 9 , wherein the simple closed curve is a polygon.

11. The OLED display of claim 9 , wherein the opening overlaps with the lower electrode.

12. The OLED display of claim 9 , further comprising a driving TFT arranged to overlap with the capacitor, wherein the lower electrode overlaps a driving semiconductor layer of the driving TFT.

13. The OLED display of claim 9 , further comprising a node contact hole within the opening, wherein the connection node is coupled to the lower electrode via the node contact hole.

14. The OLED display of claim 13 , wherein a width of the opening is greater than that of the node contact hole.

15. The OLED display of claim 13 , wherein the size of the opening in the top view is greater than that of the node contact hole in the top view.

16. The OLED display of claim 13 , further comprising an inter-layer insulation film disposed between the upper electrode and the connection node, wherein the node contact hole is defined in the insulation layer and the inter-layer insulation film.

Assignees

• Samsung Display Co Ltd
• Samsung Display Co Ltd

Inventors

• Lee Won-Se
• Kwak Won-Kyu
• Kim Se-Ho

Classifications

• H01L28/40

  Electricity · mapped topic

• H01L51/50

  Electricity · mapped topic

• H01L27/3265 Primary

  Electricity · mapped topic

• H01L27/1255

  Electricity · mapped topic

• H01L27/3276

  Electricity · mapped topic