Light-emitting element having a plurality of light-emitting structures

Patent metadata

Field	Value
Publication number	US-9768227-B2
Application number	US-201414470396-A
Country	US
Kind code	B2
Filing date	Aug 27, 2014
Priority date	Aug 27, 2013
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a first semiconductor layer having an uppermost surface and a bottommost surface opposite to the uppermost surface;
a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer;
a first electrode formed on the first semiconductor layer;
a second electrode formed on the first light-emitting structure;
a first trench formed between the first light-emitting structure and the second light-emitting structure, comprising a bottom portion exposing a first surface of the first semiconductor layer; and
a second trench formed in the first light-emitting structure, exposing a second surface of the first semiconductor layer; and
a bridge part comprising a same structure as the first light-emitting structure and the second light-emitting structure, connecting the first and the second light-emitting structures;
wherein the first trench passes through the uppermost surface of the first semiconductor layer but does not extend to the bottommost surface of the first semiconductor layer and is devoid of the first electrode and the second electrode formed therein;
wherein the first electrode is formed in the second trench.

2. The light-emitting device of claim 1 , further comprising:
another second electrode formed on the second light-emitting structure;
another second trench formed in the second light-emitting structure; and
another first electrode formed in the another second trench in the second light-emitting structure.

3. The light-emitting device of claim 1 , wherein the first light-emitting structure and the second light-emitting structure comprise a same pattern from a top view.

4. The light-emitting device of claim 1 , further comprising a second semiconductor layer comprises a side, and a distance between the side and the first electrode is 60 μm to 100 μm.

5. The light-emitting device of claim 1 , wherein the first trench separates the first light-emitting structure and the second light-emitting structure.

6. The light-emitting device of claim 1 , wherein the first light-emitting structure and the second light-emitting structure respectively comprise:
an active layer formed on the first semiconductor layer;
a second semiconductor layer formed on the active layer; and
a transparent conductive layer formed on the second semiconductor layer.

7. The light-emitting device of claim 1 , wherein the first electrode comprises a plurality of first extending parts and the second electrode comprises a plurality of second extending parts, wherein at least one of the first extending parts locates between the two second extending parts.

8. The light-emitting device of claim 6 , wherein the first electrode comprises a first pad and the second electrode comprises a second pad, the second semiconductor layer comprises a first side and a second side opposite to the first side; wherein the first pad is close to the first side and the second pad is close to the second side.

9. The light-emitting device of claim 8 , further comprising a gap set between the first pad and the first side, and the gap is equal to the size of the first pad.

10. The light-emitting device of claim 2 , further comprising an electrical connecting line connecting the two first electrodes.

11. The light-emitting device of claim 1 , further comprising:
a third trench not parallel with the first trench in a plain view and exposing the second surface of the first semiconductor layer; and
a first bridge part formed in the second trench.

12. The light-emitting device of claim 1 , wherein the first semiconductor layer on which the first light-emitting structure and the second light-emitting structure are formed is continuous and current is distributed in the first semiconductor layer.

13. The light-emitting device of claim 1 , wherein the bottom portion of the first trench is composed by the first surface of the first semiconductor layer.

14. The light-emitting device of claim 13 , wherein the first surface of the first semiconductor layer is parallel to a plane surface of the substrate.

15. The light-emitting device of claim 1 , further comprising an insulating part formed between the first semiconductor layer in the second trench and the second electrode.

16. The light-emitting device of claim 6 , wherein polarities of the first semiconductor layer and the second semiconductor layer are different.

17. A light-emitting device, comprising:
a first semiconductor layer;
a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer;
a first electrode formed on the first semiconductor layer;
a second electrode formed on the first light-emitting structure;
a first trench formed between the first light-emitting structure and the second light-emitting structure, comprising a bottom portion exposing a first upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein; and
a bridge part comprising a same structure as the first light-emitting structure and the second light-emitting structure, connecting the first and the second light-emitting structures.

Assignees

• Epistar Corp

Inventors

• Ou Chen
• Chang Chun-Wei
• Wu Chih-Wei
• Wang Sheng-Chih
• Tsai Hsin-Mei
• Tsai Chia-Chen
• Chang Chuan-Cheng

Classifications

• H01L27/15 Primary

  Electricity · mapped topic

• H01L33/38

  Electricity · mapped topic

• H01L33/20

  Electricity · mapped topic

• H01L33/08

  Electricity · mapped topic

• H10H20/831

  characterised by their shape · CPC title