Fin field effect transistor and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-9768170-B2
Application number	US-201615071224-A
Country	US
Kind code	B2
Filing date	Mar 16, 2016
Priority date	Feb 5, 2016
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

Fin field effect transistors (FinFETs) and method for fabricating the same are disclosed. One of the FinFETs includes a substrate, an insulator, a first gate, a second gate, an opening and a first dielectric layer. The substrate includes a first semiconductor fin, a second semiconductor fin and a trench between the first semiconductor fin and the second semiconductor fin. The insulator is disposed in the trench. The first gate is disposed on the first semiconductor fin. The second gate is disposed on the second semiconductor fin. The opening is disposed between the first gate and the second gate. The first dielectric layer is disposed in the opening to electrically insulate the first gate and the second gate, wherein the first dielectric layer includes an air gap therein.

First claim

What is claimed is:

1. A fin field effect transistor (FinFET), comprising:
a substrate comprising a first semiconductor fin, a second semiconductor fin and a trench between the first semiconductor fin and the second semiconductor fin;
an insulator disposed in the trench;
a first gate disposed on the first semiconductor fin;
a second gate disposed on the second semiconductor fin;
an opening disposed between the first gate and the second gate; and
a first dielectric layer being a single layer and disposed in the opening to electrically insulate the first gate and the second gate, wherein the first dielectric layer comprises an air gap therein, and the air gap is entirely surrounded by the first dielectric layer.

2. The FinFET of claim 1 , wherein a top critical dimension of the opening is different from a bottom critical dimension of the opening.

3. The FinFET of claim 1 , wherein the opening includes a top portion and a bottom portion, the top portion has straight sidewalls, and the bottom portion has inclined sidewalls.

4. The FinFET of claim 1 , wherein a top critical dimension of the opening is substantially equal to a bottom critical dimension of the opening.

5. The FinFET of claim 1 further comprising a second dielectric layer disposed between the first semiconductor fin and the first gate, between the second semiconductor fin and the second gate, and on sidewalls of the first dielectric layer.

6. The FinFET of claim 5 further comprising a third dielectric layer disposed between the first semiconductor fin and the second dielectric layer and between the second semiconductor fin and the second dielectric layer.

7. A fin field effect transistor (FinFET), comprising:
a substrate comprising a first semiconductor fin, a second semiconductor fin and a trench between the first semiconductor fin and the second semiconductor fin;
an insulator disposed in the trench;
a first gate disposed on the first semiconductor fin;
a second gate disposed on the second semiconductor fin;
an opening disposed between the first gate and the second gate; and
a first dielectric layer disposed in the opening to electrically insulate the first gate and the second gate, wherein the first dielectric layer comprises an air gap therein, and a bottom of the air gap is higher than a bottom of at least one of the first gate and the second gate.

8. The FinFET of claim 7 , wherein a top critical dimension of the opening is different from a bottom critical dimension of the opening.

9. The FinFET of claim 7 , wherein the opening includes a top portion and a bottom portion, the top portion has straight sidewalls, and the bottom portion has inclined sidewalls.

10. The FinFET of claim 9 , wherein a top critical dimension of the opening is substantially equal to a bottom critical dimension of the opening.

11. The FinFET of claim 7 further comprising a second dielectric layer disposed between the first semiconductor fin and the first gate, between the second semiconductor fin and the second gate, and on sidewalls of the first dielectric layer.

12. The FinFET of claim 7 , wherein a top of the air gap is lower than a top of at least one of the first gate and the second gate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Che-Cheng
• Lin Chih-Han
• Tseng Horng-Huei

Classifications

• H01L21/823431

  Electricity · mapped topic

• H01L21/823481

  Electricity · mapped topic

• H01L29/66545

  Electricity · mapped topic

• H01L27/0886 Primary

  Electricity · mapped topic

• H01L29/0649

  Electricity · mapped topic