Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9768095-B2
Application number	US-201615361151-A
Country	US
Kind code	B2
Filing date	Nov 25, 2016
Priority date	Nov 26, 2015
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

A semiconductor device includes a semiconductor module. The semiconductor module includes a package made of resin. The package contains a semiconductor element and a heat sink. The heat sink has a thermal conductive surface exposed on a part of one surface of the package. The semiconductor device includes an insulating plate, which is a part of a cooler, facing the thermal conductive surface of the heat sink and a resin surface around the thermal conductive surface, and pressed against the semiconductor module. At least a part of the thermal conductive surface comprises a recessed region recessed with respect to the resin surface. A solid heat transfer layer is interposed between the recessed region of the thermal conductive surface and the insulating plate, and is not interposed between the resin surface and the insulating plate.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor module comprising a package containing a semiconductor element and a heat sink, the package being made of resin, the heat sink having a thermal conductive surface exposed on a portion of one surface of the package;
a cooler facing the thermal conductive surface and a resin surface around the thermal conductive surface, the cooler being pressed against the semiconductor module;
wherein
the thermal conductive surface comprises a recessed region recessed with respect to the resin surface,
a solid heat transfer layer is interposed between the recessed region of the thermal conductive surface and the cooler, and the solid heat transfer layer is not interposed between the resin surface and the cooler.

2. The semiconductor device of claim 1 , wherein
the thermal conductive surface includes a flush region that is flush with the resin surface at a boundary between the thermal conductive surface and the resin surface, the recessed region being disposed on an inner side than the flush region,
the solid heat transfer layer is provided within the recessed region, and the solid heat transfer layer is not interposed between the flush region and the cooler.

3. The semiconductor device of claim 2 , wherein
a non-solid heat transfer material is filled between the package and the cooler so that the non-solid heat transfer material surrounds the solid heat transfer layer in a plan view of the one surface of the package.

4. The semiconductor device of claim 3 , wherein the non-solid heat transfer material is filled between the solid heat transfer layer and the cooler.

5. The semiconductor device of claim 1 , wherein
the thermal conductive surface includes a flush region that is flush with the resin surface at a boundary between the thermal conductive surface and the resin surface, the recessed region being disposed on an inner side than the flush region, and
the solid heat transfer layer is provided within both of the recessed region and the flush region.

6. The semiconductor device of claim 5 , wherein
a non-solid heat transfer material is filled between the package and the cooler so that the non-solid heat transfer material surrounds the solid heat transfer layer in a plan view of the one surface of the package.

7. The semiconductor device of claim 6 , wherein the non-solid heat transfer material is filled between the solid heat transfer layer and the cooler.

8. The semiconductor device of claim 1 , wherein
a non-solid heat transfer material is filled between the package and the cooler so that the non-solid heat transfer material surrounds the solid heat transfer layer in a plan view of the one surface of the package.

9. The semiconductor device of claim 8 , wherein the non-solid heat transfer material is filled between the solid heat transfer layer and the cooler.

10. A manufacturing method of the semiconductor device of claim 1 , the method comprising:
forming the package so as to cover the thermal conductive surface of the heat sink with the resin;
grinding a portion of the resin which covers the thermal conductive surface so as to expose the thermal conductive surface, the recessed region being formed at the thermal conductive surface by the grinding;
applying a pre-solidified heat transfer material to the recessed region and planarizing a surface of the pre-solidified heat transfer material while holding the pre-solidified heat transfer material with a holder so as not to spread out the pre-solidified heat transfer material to the resin surface;
solidifying the pre-solidified heat transfer material; and
fixing the cooler and the semiconductor module with the cooler being pressed against the thermal conductive surface of the semiconductor module.

Assignees

• Nippon Soken
• Toyota Motor Co Ltd

Inventors

• Sasaki Tomo
• Kitami Akio
• Yoshida Tadafumi
• Deguchi Masataka
• Uchiyama Kazunori
• Hakamada Naoki

Classifications

• H10W90/766

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W40/613

  for stacked arrangements of a plurality of semiconductor devices · CPC title

• H10W40/70

  Fillings or auxiliary members in containers or in encapsulations for thermal protection or control · CPC title

• H10W90/00 Primary

  Package configurations · CPC title