Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations

Patent metadata

Field	Value
Publication number	US-9768016-B2
Application number	US-201414899552-A
Country	US
Kind code	B2
Filing date	Jun 25, 2014
Priority date	Jul 2, 2013
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

First claim

The invention claimed is:

1. A material processing apparatus for applying a material coating layer onto a coating surface of a substrate comprising:
an Atomic Layer Deposition reaction chamber including a substrate support disposed therein for supporting the substrate thereon wherein the ALD reaction chamber is operable to carry out a deposition process that includes depositing the material coating layer onto the coating surface wherein the deposition process is carried out at a deposition temperature ranging between 80 and 800° C. and at a reaction chamber internal pressure ranging between 1 and 500 mTorr;
a process gas module operable to deliver doses of process gases into the reaction chamber;
an exhaust system operably to remove process gases for the reaction chamber;
a laser annealing module operable to perform in-situ laser annealing of the coating surface;
a linear motion stage disposed to transport the substrate along a first linear axis during the laser annealing; and
a controller operable to carry out ALD material deposition cycles and to carry out laser annealing of the material layer.

2. The material processing apparatus of claim 1 further comprising a substantially transparent window disposed in a wall of the ALD reaction chamber.

3. The material processing apparatus of claim 2 wherein the laser annealing module directs a laser beam onto the coating surface from outside the ALD reaction chamber wherein the laser beam passes through the substantially transparent window.

4. The material processing apparatus of claim 1 wherein the laser annealing module comprises a laser having a radiation beam output power in the range of 50-200 W wherein the radiation beam has a narrow spectral bandwidth with a center of the narrow spectral bandwidth having a wavelength in the range of 350 to 1000 nm.

5. The material processing apparatus of claim 4 further comprising beam forming and deflecting elements operable to form a substantially focused laser beam, to direct the focused laser beam onto the coating surface.

6. The material processing apparatus of claim 5 wherein the substantially focused laser beam is a line beam having a Full Width Half Maximum line width of less than 300 μm and a longitudinal line length that exceeds at least one dimension of the coating surface wherein the line beam and the coating surface are moved relatively to one another such that a dwell time of the line beam on the coating surface is in the range of 200-2000 μsec.

7. The material processing apparatus of claim 5 wherein the substantially focused laser beam is a substantially circular beam having a Full Width Half Maximum diameter of less than 300 μm wherein the substantially circular beam and the coating surface are moved relatively to one another such that a dwell time of the circular beam on the coating surface is in the range of 200-2000 μsec.

8. The material processing apparatus of claim 1 wherein the laser annealing module comprises an emission detector and an associated temperature conversion module wherein the emission detector is disposed to collect radiation from the coating surface during the laser annealing and the temperature conversion module is operable to determine a peak annealing temperature at the coating surface.

9. The material processing apparatus of claim 8 further comprising a laser power control module operable in cooperation with the temperature conversion module to modify laser input power as needed to modify the peak annealing temperature at the coating surface.

Assignees

• Ultratech Inc

Inventors

• Hawryluk Andrew M
• Sundaram Ganesh
• Bhatia Ritwik

Classifications

• H10P95/904

  of Group III-V semiconductors · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P14/3822

  Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing · CPC title

• H10P14/3808

  using laser beams · CPC title

• H10P14/3458

  Monocrystalline · CPC title