Electrically conductive thin films

Patent metadata

Field	Value
Publication number	US-9767936-B2
Application number	US-201514740583-A
Country	US
Kind code	B2
Filing date	Jun 16, 2015
Priority date	Jun 27, 2014
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure:

A x M y Ch z   Chemical Formula 1
wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, Ch is S, Se, or Te, x is a number from 1 to 3, y is a number from 1 to 3, and z is a number from 2 to 14.

First claim

What is claimed is:

1. An electrically conductive thin film, comprising
a compound represented by any of Chemical Formulas 2 to 10, or a combination thereof:
AMTe z   Chemical Formula 2

wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, and z is 2 or 5;
A 3 MTe 6   Chemical Formula 3

wherein A is V, Nb, or Ta, and M is Si or Ge;
A 2 MTe 4   Chemical Formula 4

wherein A is V, Nb, or Ta, and M is Si or Ge;
AMTe 4   Chemical Formula 5

wherein A is V, Nb, or Ta, and M is Pd, Pt, Ir, Rh, or Ir;
AM 2 Te 2   Chemical Formula 6

wherein A is V, Nb, or Ta, and M is Ni, Co, or Fe;
A 3 M 3 Te 14   Chemical Formula 7

wherein A is V, Nb, or Ta, and M is Ni, Co, Fe, Pd, Pt, Ir, or Rh;
AM x Te 3   Chemical Formula 8

wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, or Rh, and x is 1 or 2;
A 2 M 3 Te 5   Chemical Formula 9

wherein A is V, Nb, or Ta, and M is Ni, Co, Fe, Pd, Pt, Ir, or Rh; and
A 2 MCh z   Chemical Formula 10

wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, or Rh, Ch is S or Se, and z is 5 or 6, wherein the thin film has a thickness of less than or equal to 50 nanometers, and
wherein the thin film has light transmittance of greater than or equal to about 80 percent for light having a wavelength of 550 nanometers.

2. The electrically conductive thin film of claim 1 , wherein the compound comprises NbPdTe 5 , NbNiTe 5 , TaPtTe 5 , TaNiTe 5 , NbCoTe 2 , NbNiTe 2 , NbFeTe 2 , TaCoTe 2 , TaNiTe 2 , Nb 3 SiTe 6 , Nb 3 GeTe 6 , Nb 2 SiTe 4 , Nb 2 GeTe 4 , TaRuTe 4 , TaRhTe 4 , TaIrTe 4 , NbIrTe 4 , TaCo 2 Te 2 , TaNi 2 Te 2 , Ta 3 Pd 3 Te 14 , TaFeTe 3 , TaNi 2 Te 3 , Ta 2 Pd 3 Te 5 , Ta 2 PdS 6 , Ta 2 PdSe 6 , Ta 2 NiSe 6 , Ta 2 NiS 6 , Nb 2 PdSe 6 , Nb 2 PdS 6 , or a combination thereof.

3. The electrically conductive thin film of claim 1 , wherein the electrically conductive thin film has an electrical conductivity of greater than or equal to about 1000 Siemens per centimeter.

4. The electrically conductive thin film of claim 1 , wherein the electrically conductive thin film has an electrical conductivity of greater than or equal to about 6000 Siemens per centimeter.

5. The electrically conductive thin film of claim 1 , wherein a product of α and ρ is less than or equal to about 200 ohms per square, wherein α is an absorption coefficient of the compound for light having a wavelength of 550 nm and ρ is a resistivity of the compound.

6. The electrically conductive thin film of claim 1 , wherein a product of α and ρ is less than or equal to about 20 ohms per square, wherein α is an absorption coefficient of the compound for light having a wavelength of 550 nm and ρ is a resistivity of the compound.

7. The electrically conductive thin film of claim 1 , wherein the layered crystal structure belongs to an orthorhombic system and has a space group of Cmcm; or an orthorhombic system and has a space group of Pnma; or an orthorhombic system and has a space group of Cmca; or an orthorhombic system and has a space group of Pma2; or an orthorhombic system and has a space group of Pmna; or a monoclinic system and has a space group of P2 1 /c1; or a monoclinic system and has a space group of C2/m; or a monoclinic system and has a space group of I12/m1; or a monoclinic system and has a space group of C2/c.

8. The electrically conductive thin film of claim 1 , which comprises a plurality of nanosheets comprising the compound represented by Chemical Formula 1, wherein the nanosheets contact one another to provide an electrical connection therebetween.

9. The electrically conductive thin film of claim 1 , wherein the thin film is a continuous deposition film including the compound represented by Chemical Formula 1.

10. An electronic device comprising an electrically conductive thin film comprising a compound represented by any of Chemical Formulas 2 to 10, or a combination thereof:
AMTe z   Chemical Formula 2

wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, and z is 2 or 5;
A 3 MTe 6   Chemical Formula 3

wherein A is V, Nb, or Ta, and M is Si or Ge;
A 2 MTe 4   Chemical Formula 4

wherein A is V, Nb, or Ta, and M is Si or Ge;
AMTe 4   Chemical Formula 5

wherein A is V, Nb, or Ta, and M is Pd, Pt, Ir, Rh, or Ir;
AM 2 Te 2   Chemical Formula 6

wherein A is V, Nb, or Ta, and M is Ni, Co, or Fe;
A 3 M 3 Te 14   Chemical Formula 7

wherein A is V, Nb, or Ta, and M is Ni, Co, Fe, Pd, Pt, Ir, or Rh;
AM x Te 3   Chemical Formula 8

wherein A is V, Nb, or Ta, and B is Ni, Co, Fe, Pd, Pt, Ir, or Rh, x is 1 or 2; or
A 2 M 3 Te 5   Chemical Formula 9

wherein A is V, Nb, or Ta, and M is Ni, Co, Fe, Pd, Pt, Ir, or Rh; and
A 2 MCh z   Chemical Formula 10

wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, or Rh, Ch is S or Se, and z is 5 or 6,
wherein the thin film has a thickness of less than or equal to 50 nanometers, and
wherein the thin film has light transmittance of greater than or equal to about 80 percent for light having a wavelength of 550 nanometers.

11. The electronic device of claim 10 , wherein the electrically conductive thin film comprises NbPdTe 5 , NbNiTe 5 , TaPtTe 5 , TaNiTe 5 , NbCoTe 2 , NbNiTe 2 , NbFeTe 2 , TaCoTe 2 , TaNiTe 2 , Nb 3 SiTe 6 , Nb 3 GeTe 6 , Nb 2 SiTe 4 , Nb 2 GeTe 4 , TaRuTe 4 , TaRhTe 4 , TaIrTe 4 , NbIrTe 4 , TaCo 2 Te 2 , TaNi 2 Te 2 , Ta 3 Pd 3 Te 14 , TaFeTe 3 , TaNi 2 Te 3 , Ta 2 Pd 3 Te 5 , Ta 2 PdS 6 , Ta 2 PdSe 6 , Ta 2 NiSe 6 , Ta 2 NiS 6 , Nb 2 PdSe 6 , Nb 2 PdS 6 , or a combination thereof.

12. The electronic device of claim 10 , wherein the electrically conductive thin film has an electrical conductivity of greater than or equal to about 1000 Siemens per centimeter, and a product of α and ρ is less than or equal to about 200 ohms per square, wherein α is an absorption coefficient of the compound for light having a wavelength of 550 nm and ρ is a resistivity of the compound.

13. The electronic device of claim 10 , wherein the electrically conductive thin film has electrical conductivity of greater than or equal to about 6000 Siemens per centimeter, and a product of α and ρ is less than or equal to 20 ohms per square, wherein α is an absorption coefficient of the compound for light having a wavelength of 550 nm and ρ is a resistivity of the compound.

14. The electronic device of claim 10 , wherein the electrically conductive thin film comprises a plurality of nanosheets comprising the compound represented by Chemical Formula 1, and wherein the nanosheets contact one another to provide an electrical connection therebetween.

15. The electronic device of claim 10 , wherein the electronic device is a flat panel display, a touch screen panel, a solar cell, an e-window, an electrochromic mirror, a heat mirror, a transparent transistor, or a flexible display.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Hwang Sungwoo
• Lee Kimoon
• Jung Doh Won
• Kim Sang Il
• Moon Kyoung-Seok
• Lee Woojin

Classifications

• C01P2006/60

  Optical properties, e.g. expressed in CIELAB-values · CPC title

• C01P2004/24

  Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer · CPC title

• C01B19/002

  Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions · CPC title

• C01B19/02

  Elemental selenium or tellurium · CPC title

• C04B2235/404

  Refractory metals · CPC title