Silicon carbide-tantalum carbide composite and susceptor

Patent metadata

Field	Value
Publication number	US-9764992-B2
Application number	US-201414652210-A
Country	US
Kind code	B2
Filing date	Jan 28, 2014
Priority date	Feb 6, 2013
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite ( 1 ) includes: a body ( 10 ) whose surface layer is at least partly formed of a first silicon carbide layer ( 12 ); a tantalum carbide layer ( 20 ); and a second silicon carbide layer ( 13 ). The tantalum carbide layer ( 20 ) is disposed over the first silicon carbide layer ( 12 ). The second silicon carbide layer ( 13 ) is interposed between the tantalum carbide layer ( 20 ) and the first silicon carbide layer ( 12 ). The second silicon carbide layer ( 13 ) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer ( 13 ) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

First claim

The invention claimed is:

1. A silicon carbide-tantalum carbide composite comprising: a body whose surface layer is at least partly formed of a first silicon carbide layer;
a tantalum carbide layer disposed over the first silicon carbide layer; and
a second silicon carbide layer interposed between the tantalum carbide layer and the first silicon carbide layer,
wherein the second silicon carbide layer has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy.

2. The silicon carbide-tantalum carbide composite according to claim 1 , wherein the second silicon carbide layer has a C/Si composition ratio of not more than 6.0 as measured by X-ray photoelectron spectroscopy.

3. A silicon carbide-tantalum carbide composite comprising: a body whose surface layer is at least partly formed of a first silicon carbide layer;
a tantalum carbide layer disposed over the first silicon carbide layer; and
a second silicon carbide layer interposed between the tantalum carbide layer and the first silicon carbide layer,
wherein the second silicon carbide layer has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

4. The silicon carbide-tantalum carbide composite according to claim 3 , wherein the second silicon carbide layer has a peak intensity ratio G/D of not more than 7.5 between the G-band and D-band of carbon as measured by Raman spectroscopy.

5. The silicon carbide-tantalum carbide composite according to claim 1 , wherein the second silicon carbide layer has a crystallite diameter of not more than 753 Angstroms.

6. The silicon carbide-tantalum carbide composite according to claim 1 , wherein the body includes a graphite base material and the first silicon carbide layer disposed on the graphite base material.

7. The silicon carbide-tantalum carbide composite according to claim 1 , wherein the second silicon carbide layer has a thickness of not less than 0.05 μm.

8. A susceptor comprising the silicon carbide-tantalum carbide composite according to claim 1 , the susceptor including a recess of which at least one of a bottom surface and a side surface is formed of tantalum carbide layer.

Assignees

• Toyo Tanso Co

Inventors

• Shinohara Masato

Classifications

• H10P72/70

  for supporting or gripping · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• C30B29/36

  Carbides · CPC title

• C04B41/4519

  application under an other specific atmosphere · CPC title

• C04B41/009

  characterised by the material treated · CPC title