Method for fabricating three-dimensional semiconductor device using buried stop layer in substrate
US-2024268119-A1 · Aug 8, 2024 · US
US9764298B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9764298-B2 |
| Application number | US-201514940278-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 13, 2015 |
| Priority date | Aug 30, 2010 |
| Publication date | Sep 19, 2017 |
| Grant date | Sep 19, 2017 |
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An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.
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What is claimed is: 1. A reaction system for reacting a solid material with a gaseous reagent comprising: (i) a high temperature assembly comprising at least one reaction cavity coupled with a source of gaseous reagent and configured for contacting the gaseous reagent with the solid material for reaction thereof under temperature and pressure conditions effective to form an intermediate species; and a casing disposed in the at least one reaction cavity holding the solid material and comprising at least one opening for allowing an unreacted portion of the gaseous reagent and the intermediate species to exit the reaction cavity; and a heat source configured to heat the reaction cavity and the casing disposed therein; and (ii) a low temperature assembly comprising a low temperature reactor downstream in fluid flow communication with the high temperature assembly and configured to receive the intermediate species and unreacted portion of the gaseous reagent therefrom and effect reaction between the intermediate species and the unreacted portion of the gaseous reagent to form an end product; and a coolant source configured to cool the low temperature reactor. 2. The reaction system of claim 1 , wherein the high temperature assembly comprises multiple, independent reaction cavities. 3. The reaction system of claim 1 , wherein the casing is porous. 4. The reaction system of claim 1 , wherein the casing comprises a plurality of openings along the surface of the casing. 5. The reaction system of claim 4 , wherein the plurality of openings have size that is variable along a predetermined direction, wherein the size of openings increases along the predetermined direction, or wherein the size of openings decreases along the predetermined direction. 6. The reaction system of claim 4 , wherein the reactant fluid comprises BF 3 and the solid reactant comprises elemental boron solids. 7. The reaction system of claim 4 , wherein the plurality of openings comprises perforated openings. 8. The reaction system of claim 6 , further comprising a process control system that is arranged to effect said temperature and pressure conditions in the reaction cavity, wherein the process control system is constructed and arranged to establish and maintain (i) temperature in the reaction cavity in a range of from 1000° C. to 2200° C. and (ii) pressure in the reaction cavity in a range of from 0.1 torr to 10 torr. 9. The reaction system of claim 1 , wherein the at least one reaction cavity comprises a vertically elongate reactor. 10. The reaction system of claim 1 , wherein the reaction cavity comprises multipass high-temperature reaction zones along an extended flow path configured for multiple passes of fluid gaseous reagent with solid material. 11. The reaction system of claim 1 , wherein the low temperature assembly comprises a cold trap. 12. The reaction system of claim 1 , wherein the low temperature assembly comprises multiple cold traps. 13. The reaction system of claim 1 , further comprising a passageway for flowing additional gaseous reagent into the low temperature assembly.
into semiconductor materials, e.g. for doping · CPC title
Pressure · CPC title
the beds being concentric · CPC title
using electromagnetic heating · CPC title
Heating or cooling the reactor (for tubular reactors in furnaces B01J8/062) · CPC title
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