Gas barrier laminated body, method for producing same, member for electronic device, and electronic device

Patent metadata

Field	Value
Publication number	US-9763345-B2
Application number	US-201214004960-A
Country	US
Kind code	B2
Filing date	Feb 27, 2012
Priority date	Mar 30, 2011
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

Provided is a gas barrier laminate that can be produced inexpensively as compared with the case of using an inorganic film without requiring a complex production process, and exhibits an excellent gas barrier capability and excellent flexibility, and also provided are a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member. A gas barrier laminate including a base and a gas barrier layer, the gas barrier layer being provided on the base, the gas barrier layer being obtained by implanting ions into an organosilicon compound thin film formed by a CVD method that utilizes an organosilicon compound as a deposition raw material, a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member are provided.

First claim

The invention claimed is:

1. A method for producing a gas barrier laminate, comprising a sheet-shaped base and a gas barrier layer formed on the base, the method comprising a step (a) of forming an organosilicon compound thin film having a refractive index of 1.49 to 1.54 and formed of an organosilicon compound on the base using a CVD method that utilizes the organosilicon compound, which comprises a silazane, as a deposition raw material, the CVD method introducing the organosilicon compound in a gaseous state into a reaction chamber having an internal pressure of 30 to 150 Pa together with an oxidizing gas and an inert gas, and generating plasma by applying an electric power of 300 to 500 W to an electrode to deposit the organosilicon compound thin film on the base that is disposed on the electrode, and a step (b) of implanting ions into the organosilicon compound thin film formed in said step (a),
wherein a material for forming the base is a synthetic resin,
wherein a flow rate of a reaction gas that comprises the organosilicon compound is 1 to 100 ml/min, a flow rate of the oxidizing gas is 1 to 100 ml/min, and a flow rate of a carrier gas that comprises the inert gas is 1 to 200 ml/min, and wherein the organosilicon compound thin film is a silazane thin film.

2. The method according to claim 1 , wherein the ions implanted are obtained by ionizing at least one gas selected from the group consisting of hydrogen, nitrogen, oxygen, argon, helium, neon, xenon, krypton, and a silicon compound.

3. The method according to claim 1 , wherein ion implantation is performed by a plasma ion implantation method.

4. The method according to claim 1 , wherein the thickness Of the organosilicon compound thin film is 30-500 nm.

5. The method according to claim 1 , wherein the synthetic resin is at least one resin selected from the group consisting of polyimides, polyamides, polyamideimides, polyphenylene ethers, polyetherketones, polyether ether ketones, polyolefins, polyesters, polycarbonates, polysulfones, polyether sulfones, polyphenylene sulfides, polyallylates, acrylic resins, cycloolefin polymers, and aromatic polymers.

6. The method according to claim 1 , wherein the synthetic resin is at least one resin selected from the group consisting of polyesters, polyamides, and cycloolefin polymers.

7. The method according to claim 1 , wherein the step (b) implants the ions into a surface area of organosilicon compound thin film while feeding the base on which the organosilicon compound thin film is formed in a given direction.

Assignees

• Naganawa Satoshi
• Lintec Corp

Inventors

• Naganawa Satoshi

Classifications

• C23C14/48 Primary

  Ion implantation · CPC title

• C23C16/56

  After-treatment · CPC title

• H05K5/0213 Primary

  Venting apertures; Constructional details thereof · CPC title

• Y10T428/265

  1 mil or less · CPC title

• H05K13/00

  Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components · CPC title