Integrated micro/nanogenerator and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9762151-B2
Application number	US-201314650834-A
Country	US
Kind code	B2
Filing date	Apr 8, 2013
Priority date	Dec 10, 2012
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

The present disclosure discloses an integrated micro/nanogenerator and a method of fabricating the same The integrated micro/nanogenerator has a structure comprising a conducting layer, a PET layer, a PDMS layer, a micro-nano hierarchical PDMS array and a metal film layer, the conducting layer being manufactured on a surface of the PET layer, the PET layer being made of polyethylene terephthalate; the PDMS layer being made of polydimethylsiloxane, and the micro-nano hierarchical PDMS array being manufactured on a surface of the PDMS layer. The method comprises steps of: 1) fabricating a micro-scale structure on a substrate through a combination of lithography and chemical etching or physical etching; 2) fabricating a nano-scale structure with high density and high depth-to-width ratio directly on a surface of the micro-scale structure through a mask-free optimized deep reactive ion etching process; 3) using a PDMS casting film transfer process by adjusting and controlling process parameters, by means of using the mold of mirco-nano hierarchical array structure as a template; 4) fabricating a conducting layer on a surface of the PET layer by using an evaporation or sputtering or chemical vapor deposition process; 5) bonding the PDMS layer and the PET layer through high temperature bonding or normal temperature physical pressing; and 6) assembling in sequence and packaging the bonded structure obtained in step 5), the metal film layer, and another bonded structure obtained in step 5).

First claim

What is claimed is:

1. An integrated micro/nanogenerator, the generator has a structure comprising a conducting layer, a PET layer, a PDMS layer, a micro-nano hierarchical PDMS array and a metal film layer, the conducting layer being manufactured on a surface of the PET layer from a metal or semiconductor material having good electrical conductivity; the PET layer being made of polyethylene terephthalate; the PDMS layer being made of polydimethylsiloxane; the micro-nano hierarchical PDMS array being manufactured on a surface of the PDMS layer and being consisted of a micro-array structure and a nano-scale structure; the metal film layer being made of metal having strong ability to capture charges; and one bonded structure of PET layer and PDMS layer, the metal film layer, and another bonded structure of PET layer and PDMS layer being assembled in sequence and packaged.

2. The integrated micro/nanogenerator according to claim 1 , wherein the metal having good electrical conductivity is gold, silver, platinum, copper, aluminum, titanium or tungsten; the semiconductor material comprises indium tin metal oxide (ITO), III-V group compounds or high-doped silicon; and the metal having strong ability to capture charges comprises aluminum, nickel, copper, silver, gold or platinum.

3. The integrated micro/nanogenerator according to claim 1 , wherein the conducting layer has a thickness of 50 nm˜2000 nm.

4. The integrated micro/nanogenerator according to claim 1 , wherein the PET layer has a thickness of 50 μm˜2000 μm.

5. The integrated micro/nanogenerator according to claim 1 , wherein the PDMS layer has a thickness of 50 μm˜2000 μm.

6. The Integrated Micro/nanogenerator according to claim 1 , wherein the metal film layer has a thickness of 20 μm˜2000 μm.

7. The integrated micro/nanogenerator according to claim 1 , wherein the micro-scale structure is a pyramidal array, a grooved grid array or a hemispheric array with a featured size of 1 μm˜200 μm and a spacing of 1 μm˜50 μm; and the nano-scale structure comprises nano sieve pores or nano burrs with a featured size of 2 nm ˜1000 nm and a spacing of 2 nm ˜500 nm.

8. A method of fabricating the integrated micro/nanogenerator according to claim 1 , the method comprising:
fabricating a micro-scale structure on a silicon substrate or a glass substrate or a metal substrate through a combination of lithography and chemical etching or physical etching;
fabricating a nano-scale structure with high density and high depth-to-width ratio directly on a surface of the micro-scale structure through a mask-free optimized deep reactive ion etching process, thereby obtaining a mold of mirco-nano hierarchical array structure;
forming the PDMS layer having a surface with a micro-nano hierarchical PDMS array through a PDMS casting film transfer process by adjusting and controlling process parameters, by means of using the mold of mirco-nano hierarchical array structure as a template;
fabricating the conducting layer on a surface of the PET layer by using an evaporation or sputtering or chemical vapor deposition process;
bonding the PDMS layer and the PET layer through high temperature bonding or normal temperature physical pressing; and
assembling in sequence and packaging one bonded structure of PET layer and PDMS layer, the metal film layer, and another bonded structure of PET layer and PDMS layer.

9. The method of fabricating the integrated micro/nanogenerator according to claim 8 , wherein the mask-free optimized deep reactive ion etching process comprises:
performing a roughening treatment on a surface of the substrate through plasma etching or non-plasma etching;
performing initialization and plasma stabilization of a DRIE apparatus;
directly fabricating the nano-scale structure with high density and high depth-to-width ratio by controlling DRIE process parameters; and
processing the surface through a DRIE post-treatment process so as to reduce surface energy.

10. The method of fabricating the integrated micro/nanogenerator according to claim 9 , wherein the DRIE process parameters for fabricating the nano-scale structure with high density and high depth-to-width ratio comprise: a coil power of 800 W˜900 W; an intensity of pressure of 20 mTorr−30 mTorr; an etching gas of SF 6 with a flow rate of 20 sccm˜45 sccm, a passivation gas of C 4 F 8 or O 2 with a flow rate of 30 sccm˜50 sccm, wherein a ration between the flow rates of the SF 6 gas and the C 4 F 8 gas is 1:1˜1:2; a flat plate power of 6 W˜12 W; an etching/passivation time ratio of 10s: 10s˜4s: 4s; and an etching/passivation time cycle of 60˜200 times.

11. The method of fabricating the integrated micro/nanogenerator according to claim 9 , wherein the DRIE post-treatment process parameters comprise: a coil power of 800 W˜900 W; an intensity of pressure of 20 mTorr−30 mTorr; an etching gas of SF 6 with a flow rate of 0 sccm, a passivation gas of C 4 F 8 or O 2 with a flow rate of 30 sccm˜50 sccm; a flat plate power of 6 W˜12 W; an etching/passivation time ratio of 0s: 10s˜0s: 4s; and an etching/passivation time cycle of 1˜20 times.

12. The method of fabricating the integrated micro/nanogenerator according to claim 8 , wherein the process parameters in forming the PDMS layer comprise a temperature of 50˜100 ° C. and a time period of 30minutes˜2 hours.

13. The method of fabricating the integrated micro/nanogenerator according to claim 8 , wherein the micro-scale structure comprises a pyramidal array, a grooved grid array or a hemispheric array, and the nano-scale structure comprises nano sieve pores or nano burrs.

Assignees

• Univ Beijing

Inventors

• Zhang Haixia
• Zhang Xiaosheng
• Han Mengdi
• Zhu Fuyun

Classifications

• H02N1/04 Primary

  Friction generators · CPC title

• Y10T29/49119

  Brush · CPC title

• H02N11/002 Primary

  Generators · CPC title