Semiconductor laser diode on tiled gallium containing material

Patent metadata

Field	Value
Publication number	US-9762032-B1
Application number	US-201615218690-A
Country	US
Kind code	B1
Filing date	Jul 25, 2016
Priority date	Feb 7, 2014
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

First claim

The invention claimed is:

1. A system comprising:
a laser diode device configured from a gallium and nitrogen containing semiconductor substrate, the gallium and nitrogen containing semiconductor substrate (“substrate”) having a plurality of epitaxially grown layers overlaying a top-side of the substrate, the substrate being aligned to a spatial region configured in a selected direction of a first handle substrate, the substrate being bonded to a portion of a surface region of the first handle substrate using a first bonding medium provided between the first handle substrate and the substrate while maintaining alignment between a reference crystal orientation and the selected direction of the first handle substrate, the device comprising a metal contact and/or a metal bond pad formed to p-type and/or n-type gallium and nitrogen containing layers, wherein the reference crystal orientation for the substrate is substantially parallel to within 5 degrees or less to the spatial region configured in the selected direction.

2. The system of claim 1 wherein the reference crystal orientation for the substrates is substantially parallel to within 3 degrees or less to the spatial region configured in the selected direction.

3. The system of claim 1 wherein the reference crystal orientation for the substrates is substantially parallel to within 1 degree or less to the spatial region configured in the selected direction.

4. The system of claim 1 wherein the reference crystal orientation is provided by cleaving the substrate to expose the reference crystal orientation, is provided by X-ray diffraction, or is provided by an orienting flat or otherwise from a determined shape of a portion of the substrate.

5. The system of claim 1 wherein the first handle substrate is patterned with one or more alignment marks or discontinuous regions of bonding media configured to align the spatial region to the substrate.

6. The system of claim 1 further comprising, a ridge or some other means of inducing lateral optical mode confinement to form a laser stripe.

7. The system of claim 1 further comprising a dielectric passivation layer.

8. The system of claim 1 further comprising a pair of cleaved region to form facets.

9. The system of claim 1 further comprising a pair of facets, which are opposite of each other, and provided by an etching process selected from at least one of reactive ion etching (RIE), chemical assisted ion beam etching (CAIBE), or inductively coupled plasma etching (ICP).

10. A system comprising:
a laser diode device configured from a substrate containing gallium and nitrogen, the substrate having a plurality of epitaxially grown layers overlaying a top-side of the substrate, the substrate being aligned to a spatial region configured in a selected direction of a first handle substrate, the substrate being bonded to a portion of a surface region of the first handle substrate using a first bonding medium provided between the first handle substrate and the substrate while maintaining alignment between a reference crystal orientation for the substrate and the selected direction of the first handle substrate, the device comprising a metal contact and/or a metal bond pad formed to p-type and/or n-type gallium and nitrogen containing layers, wherein the reference crystal orientation for the substrate is substantially parallel to within 5 degrees or less to the spatial region configured in the selected direction.

11. The system of claim 10 wherein the reference crystal orientation for the substrates is substantially parallel to within 3 degrees or less to the spatial region configured in the selected direction.

12. The system of claim 10 wherein the reference crystal orientation for the substrates is substantially parallel to within 1 degree or less to the spatial region configured in the selected direction.

13. The system of claim 10 wherein the reference crystal orientation is provided by cleaving the substrate to expose the reference crystal orientation, is provided by X-ray diffraction, is provided by an orienting flat, or is provided by a shape of a portion of the substrate.

14. The system of claim 10 wherein the first handle substrate is patterned with one or more alignment marks or discontinuous regions of bonding media for aligning the spatial region to the substrate.

15. The system of claim 10 wherein the device further comprises a ridge to form a laser stripe.

16. The system of claim 10 wherein the device further comprises a dielectric passivation layer.

17. The system of claim 10 wherein the device further comprises a pair of cleaved region to form facets.

18. The system of claim 10 wherein the device further comprises a pair of facets, which are opposite of each other, and provided by an etching process selected from at least one of reactive ion etching (RIE), chemical assisted ion beam etching (CAIBE), or inductively coupled plasma etching (ICP).

19. A system comprising:
a laser diode device configured from a substrate containing gallium and nitrogen, the substrate having a plurality of epitaxially grown layers overlaying a top-surface of the substrate, the substrate being aligned to a spatial region configured in a selected direction of a first handle substrate, the substrate being bonded to a portion of a surface region of the first handle substrate using a first bonding medium provided between the first handle substrate and the substrate while maintaining alignment between a reference crystal orientation for the substrate and the selected direction of the first handle substrate, the device comprising a metal formed to gallium and nitrogen containing layers, wherein the reference crystal orientation for the substrate is substantially parallel to within 5 degrees or less to the spatial region configured in the selected direction.

20. The system of claim 19 wherein the reference crystal orientation for the substrates is substantially parallel to within 3 degrees or less to the spatial region configured in the selected direction.

Assignees

• Soraa Laser Diode Inc

Inventors

• Mclaurin Melvin
• Sztein Alexander
• Hsu Po Shan
• Raring James W

Classifications

• H01S5/32025

  non-polar orientation · CPC title

• H10W72/30

  Die-attach connectors · CPC title

• H01S5/0215

  Bonding to the substrate · CPC title

• H01S5/0202

  Cleaving · CPC title

• H01S5/2201

  in a specific crystallographic orientation · CPC title