Optical device and a method of fabricating an optical device

Patent metadata

Field	Value
Publication number	US-9761756-B2
Application number	US-201514861497-A
Country	US
Kind code	B2
Filing date	Sep 22, 2015
Priority date	Feb 12, 2015
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

An optical device comprising: a photonic crystal structure, comprising: a layer of a first material, the layer comprising a quantum emitter; and a plurality of regions of a second material in the layer of the first material, the regions arranged in a regular lattice having at least one region missing from the lattice so that a defect is formed, wherein the quantum emitter is located in the defect part of the photonic crystal structure; wherein the second material has a different refractive index to the first material; and an electrode which is electrically contacted to only the defect part of the photonic crystal structure.

First claim

The invention claimed is:

1. An optical device, comprising:
a photonic crystal structure, comprising:
a layer of a first material, the layer comprising a quantum emitter;
a plurality of regions of a second material in the layer of the first material, the regions arranged in a regular lattice having at least one region missing from the lattice so that a defect is formed, wherein the quantum emitter is located in a defect part of the photonic crystal structure;

wherein the second material has a different refractive index to the first material;
a solid layer of electrically insulating material overlying and in contact with the layer of the first material; and
a region of a third material in the solid layer of the electrically insulating material, which overlies and is in contact with a surface of the layer of the first material at the defect part of the photonic crystal structure, wherein the third material is electrically conducting.

2. The optical device of claim 1 , further comprising:
an electrode, which is electrically contacted to the defect part through the third material.

3. The optical device of claim 2 , wherein the electrically insulating material is the same as the second material.

4. The optical device of claim 1 , wherein the second material has a refractive index of less than 1.6 and is suitable for use as an electron-beam resist.

5. The optical device of claim 1 , wherein the second material is hydrogen silsesquioxane.

6. The optical device of claim 1 , wherein the photonic crystal structure is overlying and in contact with a material having a lower refractive index than the first material.

7. The optical device of claim 1 , wherein the photonic crystal structure is overlying and in contact with a layer comprising a material which is the same as the second material.

8. The optical device of claim 2 , wherein the electrode is a p-type electrode and further comprising:
an n-type electrode that is electrically contacted to the opposite surface of the photonic crystal structure to the p-type electrode, forming a p-n junction in a direction substantially perpendicular to a plane of the layers.

9. The optical device of claim 1 , wherein the first material is a semiconducting material.

10. The optical device of claim 1 , wherein the first material is GaAs and wherein the layer of the first material comprises a layer of low density InAs quantum dots.

11. The optical device of claim 2 , wherein the third material is indium tin oxide.

12. The optical device of claim 1 , wherein the defect part is a waveguide region along a direction substantially parallel to the plane of the layer.

13. The optical device of claim 1 , wherein the defect part is a cavity region.

14. The optical device of claim 13 , further comprising:
a waveguide region which is a second defect part of the lattice formed by a plurality of regions of the second material missing from the lattice; and
wherein the waveguide region is optically coupled to the cavity region.

15. The optical device of claim 1 , further comprising:
an interferometer which is a plurality of defect parts of the lattice formed by a plurality of regions of the second material missing from the lattice; and
wherein the interferometer is optically coupled to the defect part in which the quantum emitter is located.

Assignees

• Toshiba Kk

Inventors

• Kalliakos Sokratis
• Skiba-Szymanska Joanna Krystyna
• Ellis David Julian Peter
• Shields Andrew James

Classifications

• G06N99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H01L2933/0025

  Electricity · mapped topic

• H01L33/44

  Electricity · mapped topic

• H01L33/42

  Electricity · mapped topic

• H01L2933/0016

  Electricity · mapped topic