Photoelectric conversion device

Patent metadata

Field	Value
Publication number	US-9761749-B2
Application number	US-201514627298-A
Country	US
Kind code	B2
Filing date	Feb 20, 2015
Priority date	Oct 5, 2011
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

First claim

What is claimed is:

1. A photoelectric conversion device comprising:
a crystalline silicon substrate;
a first silicon semiconductor layer on one surface of the crystalline silicon substrate, the first silicon semiconductor layer having a p-type conductivity;
a second silicon semiconductor layer which is partially over the first silicon semiconductor layer, the second silicon semiconductor layer having a p-type conductivity;
a first light-transmitting conductive film over the second silicon semiconductor layer;
a first electrode over the first light-transmitting conductive film;
a third silicon semiconductor layer under the crystalline silicon substrate, the third silicon semiconductor layer having an n-type conductivity or an i-type conductivity;
a fourth silicon semiconductor layer under the third silicon semiconductor layer, the fourth silicon semiconductor layer partially overlapping with the third silicon semiconductor layer and having an n-type conductivity;
a second light-transmitting conductive film under the fourth silicon semiconductor layer; and
a second electrode under the second light-transmitting conductive film,
wherein the second electrode partially overlaps with the fourth silicon semiconductor layer,
wherein the third silicon semiconductor layer includes a portion not overlapped with the fourth silicon semiconductor layer nor the second electrode,
wherein the first electrode partially overlaps with the second silicon semiconductor layer,
wherein the first silicon semiconductor layer includes a portion not overlapped with the second silicon semiconductor layer nor the first electrode,
wherein the first silicon semiconductor layer has a lower concentration of impurities than the second silicon semiconductor layer, and
wherein a surface on the first electrode side serves as a light-receiving surface of the photoelectric conversion device.

2. The photoelectric conversion device according to claim 1 , wherein at least one of the one surface and a surface which is opposite to the one surface has a plurality of projections.

3. The photoelectric conversion device according to claim 1 , wherein the second silicon semiconductor layer has a higher carrier concentration than the first silicon semiconductor layer.

4. The photoelectric conversion device according to claim 1 , wherein the fourth silicon semiconductor layer has a higher carrier concentration than the third silicon semiconductor layer.

5. A photoelectric conversion device comprising:
a crystalline silicon substrate;
a first silicon semiconductor layer on one surface of the crystalline silicon substrate, the first silicon semiconductor layer having a p-type conductivity;
a second silicon semiconductor layer which is partially over the first silicon semiconductor layer, the second silicon semiconductor layer having a p-type conductivity;
a first light-transmitting conductive film over the second silicon semiconductor layer; and
a first electrode over the first light-transmitting conductive film, wherein the first electrode partially overlaps with the second silicon semiconductor layer,
wherein the first silicon semiconductor layer includes a portion not overlapped with the second silicon semiconductor layer nor the first electrode,
wherein the first silicon semiconductor layer has a lower concentration of impurities than the second silicon semiconductor laver, and
wherein a surface on the first electrode side serves as a light-receiving surface of the photoelectric conversion device.

6. The photoelectric conversion device according to claim 5 , further comprising:
a third silicon semiconductor layer under the crystalline silicon substrate, the third silicon semiconductor layer having an n-type conductivity or an i-type conductivity;
a fourth silicon semiconductor layer under the third silicon semiconductor layer, the fourth silicon semiconductor layer having an n-type conductivity; and
a second electrode under the fourth silicon semiconductor layer.

7. The photoelectric conversion device according to claim 5 , further comprising:
a third silicon semiconductor layer under the crystalline silicon substrate, the third silicon semiconductor layer having an n-type conductivity or an i-type conductivity;
a fourth silicon semiconductor layer under the third silicon semiconductor layer, the fourth silicon semiconductor layer partially overlapping with the third silicon semiconductor layer and having an n-type conductivity;
a second light-transmitting conductive film under the fourth silicon semiconductor layer; and
a second electrode under the second light-transmitting conductive film,
wherein the second electrode partially overlaps with the fourth silicon semiconductor layer, and
wherein the third silicon semiconductor layer includes a portion not overlapped with the fourth silicon semiconductor layer nor the second electrode.

8. The photoelectric conversion device according to claim 5 , wherein at least one of the one surface and a surface which is opposite to the one surface has a plurality of projections.

9. The photoelectric conversion device according to claim 5 , wherein the second silicon semiconductor layer has a higher carrier concentration than the first silicon semiconductor layer.

10. The photoelectric conversion device according to claim 7 , wherein the fourth silicon semiconductor layer has a higher carrier concentration than the third silicon semiconductor layer.

Assignees

• Semiconductor Energy Lab

Inventors

• Hirose Takashi
• Kusumoto Naoto

Classifications

• H01L31/022425

  Electricity · mapped topic

• H01L31/068 Primary

  Electricity · mapped topic

• H01L31/077

  Electricity · mapped topic

• H01L31/028

  Electricity · mapped topic

• H01L31/202

  Electricity · mapped topic