Thin epitaxial silicon carbide wafer fabrication

Patent metadata

Field	Value
Publication number	US-9761493-B2
Application number	US-201414163432-A
Country	US
Kind code	B2
Filing date	Jan 24, 2014
Priority date	Jan 24, 2014
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

Techniques for fabricating thin epitaxial SiC device wafers are described. A bulk SiC wafer is used to provide a seed layer of a thin layer of SiC for epitaxially growing SiC. The seed layer is exfoliated from the bulk SiC after bonding the bulk SiC to a handle substrate. The bulk SiC wafer from which the thin layer of SiC is exfoliated may be re-used in fabricating subsequent thin film epitaxial SiC wafers. After growing epitaxial SiC from the seed layer on the handle substrate, devices may be fabricated in the epitaxial SiC and the handle substrate can be removed. The handle substrate can be re-used in fabricating subsequent thin film epitaxial SiC wafers. The epitaxial SiC can be cut into dies and packaged as an SiC chip or bonded to another substrate, such as a silicon substrate with devices formed thereon.

First claim

I claim:

1. A method of fabricating thin epitaxial SiC device wafers comprising:
bonding a bulk SiC wafer consisting of single crystal silicon carbide to a first substrate to form a bonded bulk SiC wafer and first substrate;
performing an exfoliation process to the bonded bulk SiC wafer and first substrate such that a first portion of the bulk SiC wafer remains on the first substrate as a seed layer and a second portion of the bulk SiC is separated;
after separation, processing the second portion of the bulk SiC for subsequent bonding to a second substrate;
growing epitaxial SiC on a Si-face of the seed layer remaining on the first substrate after the exfoliation process that separated the seed layer and the second portion of the bulk SiC; and
debonding the first substrate from the epitaxial SiC to provide a stand-alone thin epitaxial SiC device wafer, wherein the thin epitaxial SiC device wafer has a thickness of 30-150 μm.

2. The method of claim 1 , wherein the first substrate comprises a GaN layer on sapphire substrate.

3. The method of claim 2 , wherein debonding the first substrate from the epitaxial SiC comprises performing a laser liftoff to remove the sapphire substrate from the GaN layer.

4. The method of claim 3 , further comprising removing the GaN layer from the epitaxial SiC.

5. The method of claim 1 , wherein the first substrate comprises a SiC wafer.

6. The method of claim 5 , wherein the first substrate further comprises an opaque layer on the SiC wafer.

7. The method of claim 6 , wherein the opaque layer comprises InGaN.

8. The method of claim 1 , further comprising fabricating devices on a front side of the epitaxial SiC.

9. The method of claim 8 , wherein the devices are fabricated before debonding the first substrate from the epitaxial SiC.

10. The method of claim 8 , wherein the devices are fabricated after debonding the first substrate from the epitaxial SiC.

11. The method of claim 8 , further comprising performing back side metallization on a back side of the epitaxial SiC.

12. The method of claim 1 , further comprising bonding the epitaxial SiC to a complementary metal oxide semiconductor (CMOS) substrate.

13. The method of claim 1 , further comprising, after debonding the first substrate from the epitaxial SiC, processing the portion of the first substrate to form the second substrate.

14. A method of fabricating thin epitaxial SiC device wafers comprising:
bonding a bulk SiC wafer consisting of single crystal silicon carbide to a first substrate to form a bonded bulk SiC wafer and first substrate;
performing an exfoliation process to the bonded bulk SiC wafer and first substrate such that a first portion of the bulk SiC wafer remains on the first substrate as a seed layer and a second portion of the bulk SiC is separated;
growing epitaxial SiC on a Si-face of the seed layer remaining on the first substrate after the exfoliation process that separated the seed layer and the second portion of the bulk SiC;
fabricating devices on a front side of the epitaxial SiC; and
debonding the first substrate from the epitaxial SiC to provide a stand-alone thin epitaxial SiC device wafer, wherein the thin epitaxial SiC device wafer has a thickness of 30-150 μm.

15. The method of claim 14 , wherein the devices are fabricated before debonding the first substrate from the epitaxial SiC.

16. The method of claim 14 , wherein the devices are fabricated after debonding the first substrate from the epitaxial SiC.

17. A method of fabricating thin epitaxial SiC device wafers comprising:
preparing a bulk SiC substrate consisting of single crystal silicon carbide for exfoliation of a donation layer;
preparing a handle substrate by depositing support and/or bonding material;
bonding the bulk SiC substrate to the handle substrate such that the donation layer faces the support and/or bonding material;
performing an exfoliation process such that the donation layer remains on the support and/or bonding material and a remaining portion of the bulk SiC is separated;
growing epitaxial SiC on a Si-face of the donation layer to form a thin epitaxial SiC wafer remaining on the handle substrate after the exfoliation process that separates the donation layer from the remaining portion of the bulk SiC, wherein the thin epitaxial SiC wafer has a thickness of 30-150 μm;
forming SiC devices on the thin epitaxial SiC wafer;
performing a laser liftoff process to remove the handle substrate from the thin epitaxial SiC wafer; and
removing the support and/or bonding material.

18. The method of claim 17 , further comprising preparing the remaining portion for exfoliation of another donation layer, the bulk SiC substrate being used for exfoliation of a plurality of donation layers for subsequently fabricated epitaxial SiC device wafers.

19. The method of claim 17 , wherein the handle substrate comprises sapphire or SiC.

20. The method of claim 17 , further comprising implanting p-type dopants to the donation layer, wherein growing the epitaxial SiC comprises growing p-type SiC on the donation layer.

21. The method of claim 17 , further comprising implanting n-type dopants to the donation layer, wherein growing the epitaxial SiC comprises growing n-type SiC on the donation layer.

Assignees

• Univ Rutgers

Inventors

• Celler George K

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/36

  characterised by treatments done before the formation of the materials · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title