Physical vapor deposition methods and systems to form semiconductor films using counterbalance magnetic field generators

Patent metadata

Field	Value
Publication number	US-9761441-B2
Application number	US-201514792597-A
Country	US
Kind code	B2
Filing date	Jul 6, 2015
Priority date	Aug 31, 2009
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate.

First claim

The invention claimed is:

1. A plasma implementation system comprising:
a chamber configured to facilitate plasma processing;
a wafer chuck positioned to support a semiconductor substrate in the chamber; and
a bowtie-shaped arrangement of magnet elements positioned in the chamber and configured to yield a field that induces ionization of a target material positioned between the magnet elements and the wafer chuck to enable a target material to be deposited on a semiconductor substrate,
wherein the magnet elements are configured to rotate about an axis of rotation,
wherein the bowtie-shaped arrangement of magnet elements comprises
a first magnetic field generator having a first triangular-shaped periphery in a plane that is perpendicular to the axis of rotation, and
a second magnetic field generator having a second triangular-shaped periphery in a plane that is perpendicular to the axis of rotation, and
wherein each triangular-shaped periphery of each magnetic field generator comprises a distal portion between a pair of lateral portions that are angled toward each other in a direction away from the distal portion.

2. The plasma implementation system of claim 1 wherein
each pair of lateral portions defines an angle with a vertex that is defined at a reference point, which is located either coincident with the axis of rotation or adjacent to the axis of rotation.

3. The plasma implementation system of claim 1 further comprising a shield within the chamber that defines a plasma processing region;
wherein the magnet elements
apply magnetic flux to the plasma processing region such that the magnet flux has peak magnitudes of magnetic strength at its perimeter, which is adjacent to a periphery of a semiconductor substrate, and a minimum magnitude of magnetic strength between the peak magnitudes.

4. The plasma implementation system of claim 3
wherein the peak magnitudes and the minimum magnitude of magnetic strength are disposed substantially along a diameter that rotates in synchronization with a medial line passing through the bowtie-shaped arrangement of magnet elements.

5. The plasma implementation system of claim 1 wherein the bowtie-shaped arrangement of magnet elements comprises:
a first group of magnets disposed along the triangular-shaped periphery of the first magnetic field generator; and
a second group of magnets disposed along the triangular-shaped periphery of the second magnetic field generator,
wherein the first and the second groups of magnets are polarized so that magnet flux passes from the first group of magnets to the second group of magnets.

6. The plasma implementation system of claim 5 wherein the first and the second groups of magnets comprise:
subsets of magnets having different magnetic characteristics to generate different amounts of flux.

7. The plasma implementation system of claim 5 wherein the first and the second groups of magnets respectively comprise:
a first magnet pole and a second magnet pole.

8. The plasma implementation system of claim 7 wherein the first magnet pole comprises:
a peripheral structure to establish the first magnetic pole,
wherein the peripheral structure includes a sawtooth-shaped edge in a plane of rotation.

9. The plasma implementation system of claim 1 further comprising:
a supplemental magnetic element disposed adjacent to an external side of the lateral portion of the triangular-shaped periphery of one of the magnetic field generators.

10. The plasma implementation system of claim 1 further comprises:
a radio-frequency (“RF”) power generator configured to apply an RF voltage to the wafer chuck.

11. The plasma implementation system of claim 1 wherein each distal portion has an arc-shaped periphery.

12. A plasma implementation system comprising:
a chamber configured to facilitate plasma processing;
a wafer chuck positioned to support a semiconductor substrate in the chamber; and
a bowtie-shaped arrangement of magnet elements positioned in the chamber and configured to yield a field that induces ionization of a target material positioned between the magnet elements and the wafer chuck to enable a target material to be deposited on a semiconductor substrate,
wherein the magnet elements are configured to rotate about an axis of rotation,
wherein the bowtie-shaped arrangement of magnet elements comprises

a first magnetic field generator having a first triangular-shaped periphery in a plane that is perpendicular to the axis of rotation, and
a second magnetic field generator having a second triangular-shaped periphery in a plane that is perpendicular to the axis of rotation,
wherein each triangular-shaped periphery of each magnetic field generator comprises a distal portion between a pair of lateral portions that are angled toward each other in a direction away from the distal portion; and
wherein the second magnetic field generator comprises a mass approximately equivalent to that of the first magnetic field generator to counteract a force generated by rotation about the axis of rotation.

13. The plasma implementation system of claim 12 wherein each pair of lateral portions defines an angle with a vertex that is defined at a reference point, which is located either coincident with the axis of rotation or adjacent to the axis of rotation.

14. The plasma implementation system of claim 12 wherein the bowtie-shaped arrangement of magnet elements comprises:
a first group of magnets disposed along the triangular-shaped periphery of the first magnetic field generator; and
a second group of magnets disposed along the triangular-shaped periphery of the second magnetic field generator,
wherein the first and the second groups of magnets are polarized so that magnet flux passes from the first group of magnets to the second group of magnets.

15. The plasma implementation system of claim 14 wherein the first and the second groups of magnets comprise:
subsets of magnets having different magnetic characteristics to generate different amounts of flux.

16. The plasma implementation system of claim 14 wherein each of the first and the second groups of magnets comprises:
a first magnet pole and a second magnet pole.

17. The plasma implementation system of claim 16 wherein the first magnet pole comprises:
a peripheral structure to establish the first magnetic pole,
wherein the peripheral structure includes a sawtooth-shaped edge in a plane of rotation.

18. The plasma implementation system of claim 12 further comprising:
a supplemental magnetic element disposed adjacent to an external side of the lateral portion of the triangular-shaped periphery of one of the magnetic field generators.

19. The plasma implementation system of claim 12 wherein each distal portion has an arc-shaped periphery.

20. A plasma implementation system comprising:
a chamber configured to facilitate plasma processing;
a shield within the chamber that defines a plasma processing region;
a wafer chuck positioned to support a semiconductor substrate in the chamber;
a bowtie-shaped arrangement of magnet elements positioned in the chamber and configured to yield a field that induces ionization of a target material positioned between the magnet elements and the wafer chuck to enable a target material to be deposited on a semiconductor substrate,
wherein the magnet elements are configured to rotate about an axis of rotation,
wherein the bowtie-shaped arrangement of magnet elements comprises
a first magnetic field generator having a

Assignees

• Samsung Electronics Co Ltd
• Semicat Inc

Inventors

• Park Jeonghee
• Park Jae Yeol

Classifications

• H10P14/6329 Primary

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H01J37/3452

  Magnet distribution · CPC title

• H01J37/345

  Magnet arrangements in particular for cathodic sputtering apparatus (material of magnets or magnets in general H01F1/00, H01F7/00) · CPC title

• H01J2237/332

  Coating · CPC title

• C23C14/35 Primary

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title