Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-9761437-B2
Application number	US-201514803336-A
Country	US
Kind code	B2
Filing date	Jul 20, 2015
Priority date	Mar 23, 2011
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a film containing a specific element, oxygen, carbon and nitrogen or a film containing the specific element, oxygen and carbon on a substrate, by performing a cycle of alternately performing n times (n is an integer of one or more) (a) forming a first layer containing the specific element, carbon and nitrogen and (b) forming a second layer, while interposing purging a residual gas in-between,
wherein (a) comprises alternately performing m times (m is an integer of two or more) (a-1) supplying a first source gas to the substrate and (a-2) supplying a second source gas to the substrate, while interposing purging a residual gas in-between,
wherein the first source gas contains the specific element and a halogen-group; and
wherein the second source gas contains the specific element and an amino-group; and

wherein (b) comprises oxidizing the first layer by supplying an oxygen-containing gas, or the oxygen-containing gas and a hydrogen-containing gas to the substrate.

2. The method of claim 1 , wherein the first layer includes a layer which contains the specific element, nitrogen and carbon, and in which a carbon concentration is higher than a nitrogen concentration.

3. The method of claim 1 , wherein in (b), the oxygen-containing gas which is thermally activated, or the oxygen-containing gas and the hydrogen-containing gas which are thermally activated, are supplied to the substrate.

4. The method of claim 1 , wherein in (b), the oxygen-containing gas which is thermally activated by non-plasma, or the oxygen-containing gas and the hydrogen-containing gas which are thermally activated by non-plasma, are supplied to the substrate.

5. The method of claim 1 , wherein in (b), an oxidation reaction of the first layer is not saturated.

6. The method of claim 1 , wherein the specific element includes a semiconductor element or a metal element.

7. The method of claim 1 , wherein the first source gas includes a chlorosilane-based source or a fluorosilane-based source gas, and the second source gas includes an aminosilane-based source gas.

8. The method of claim 1 , wherein the specific element includes at least one selected from the group consisting of Si, Ti, Zr, Hf, Ta, Al and Mo.

9. The method of claim 1 , wherein n is set to be an integer of two or more.

10. The method of claim 1 , wherein a composition ratio of the film is controlled by controlling a gas supply time or an oxidizing power in (b).

11. A method of manufacturing a semiconductor device, comprising:
forming a film containing a specific element, oxygen, carbon and nitrogen or a film containing the specific element, oxygen and carbon on a substrate, by performing a cycle n times (n is an integer of one or more), the cycle including asynchronously performing:
(a) forming a first layer containing the specific element, carbon and nitrogen by performing a set m times (m is an integer of two or more), the set including asynchronously performing:
(a-1) supplying a first source gas containing the specific element and a halogen-group to the substrate;
(a-2) purging a residual gas including the first source gas on the substrate;
(a-3) supplying a second source gas containing the specific element and an amino-group to the substrate; and
(a-4) purging a residual gas including the second source gas on the substrate, and

(b) forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, or the oxygen-containing gas and a hydrogen-containing gas to the substrate.

12. The method of claim 11 , wherein n is set to be an integer of two or more.

13. The method of claim 11 , wherein a composition ratio of the film is controlled by controlling a gas supply time or an oxidizing power in (b).

14. A method of manufacturing a semiconductor device, comprising:
forming a film containing silicon, oxygen, carbon and nitrogen or a film containing silicon, oxygen and carbon on a substrate, by performing a cycle n times (n is an integer of one or more), the cycle including asynchronously performing:
(a) forming a first layer containing silicon, carbon and nitrogen by performing a set m times (m is an integer of two or more), the set including asynchronously performing:
(a-1) supplying a first source gas containing silicon and a halogen-group to the substrate;
(a-2) purging a residual gas including the first source gas on the substrate;
(a-3) supplying a second source gas containing silicon and an amino-group to the substrate; and
(a-4) purging a residual gas including the second source gas on the substrate, and

(b) forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, or the oxygen-containing gas and a hydrogen-containing gas to the substrate.

15. The method of claim 14 , wherein n is set to be an integer of two or more.

16. The method of claim 14 , wherein a composition ratio of the film is controlled by controlling a gas supply time or an oxidizing power in (b).

Assignees

• Hitachi Int Electric Inc

Inventors

• Ota Yosuke
• Hirose Yoshiro

Classifications

• H10P14/6322

  Formation by thermal treatments (formation by plasma treatment H10P14/6319) · CPC title

• H10P14/6319

  Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title