Polishing composition containing cationic polymer additive

Patent metadata

Field	Value
Publication number	US-9758697-B2
Application number	US-201514639598-A
Country	US
Kind code	B2
Filing date	Mar 5, 2015
Priority date	Mar 5, 2015
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition comprising:
(a) first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %,
(b) a functionalized heterocycle selected from a functionalized nitrogen-containing heterocycle, a functionalized sulfur-containing heterocycle, a naphthoic acid, and combinations thereof, wherein the functionalized heterocycle is present in the polishing composition at a concentration of about 100 ppm to about 1500 ppm, wherein the functionalized nitrogen-containing heterocycle is selected from the group consisting of picolinic acid, picolylamine, quinaldic acid, and combinations thereof,
(c) a cationic polymer, wherein the cationic polymer is a quaternary amine, and wherein the cationic polymer is present in the polishing composition at a concentration of about 1 ppm to about 250 ppm,
(d) a carboxylic acid, wherein the pKa of the carboxylic acid is about 1 to about 6, and wherein the carboxylic acid is present in the polishing composition at a concentration of about 25 ppm to about 500 ppm,
(e) a pH-adjusting agent wherein the pH-adjusting agent is triethanolamine, and
(f) an aqueous carrier,
wherein the pH of the polishing composition is about 1 to about 6, and wherein the pH of the polishing composition is within about 2 units of the pKa of the carboxylic acid.

2. The chemical-mechanical polishing composition of claim 1 , wherein the first abrasive particles are present in the polishing composition at a concentration of about 0.1 wt. % to about 0.5 wt. %.

3. The chemical-mechanical polishing composition of claim 1 , wherein the polishing composition further comprises second abrasive particles, and wherein the second abrasive particles are wet-process ceria particles, have a median particle size of about 1 nm to about 60 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %.

4. The chemical-mechanical polishing composition of claim 3 , wherein the first abrasive particles and the second abrasive particles, in total, are present in the polishing composition at a concentration of about 0.1 wt. % to about 0.5 wt. %.

5. The chemical-mechanical polishing composition of claim 1 , wherein the functionalized heterocycle comprises a functionalized nitrogen-containing heterocycle, and wherein the functionalized nitrogen-containing heterocycle is picolinic acid.

6. The chemical-mechanical polishing composition of claim 1 , wherein the functionalized heterocycle comprises a functionalized nitrogen-containing heterocycle, and wherein the functionalized nitrogen-containing heterocycle is quinaldic acid.

7. The chemical-mechanical polishing composition of claim 1 , wherein the cationic polymer is poly(vinylimidazolium).

8. The chemical-mechanical polishing composition of claim 7 , wherein the poly(vinylimidazolium) is present in the polishing composition at a concentration of about 1 ppm to about 5 ppm.

9. The chemical-mechanical polishing composition of claim 1 , wherein the pKa of the carboxylic acid is about 3.5 to about 5.

10. The chemical-mechanical polishing composition of claim 9 , wherein the carboxylic acid is acetic acid.

11. The chemical-mechanical polishing composition of claim 1 , wherein the pH of the polishing composition is about 3.5 to about 5.

12. A chemical-mechanical polishing composition comprising:
(a) first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %,
(b) a functionalized heterocycle selected from a functionalized nitrogen-containing heterocycle, a functionalized sulfur-containing heterocycle, a naphthoic acid, and combinations thereof, wherein the functionalized heterocycle is present in the polishing composition at a concentration of about 100 ppm to about 1500 ppm,
(c) a cationic polymer selected from a cationic polyvinyl alcohol and a cationic cellulose, wherein the cationic polymer is present in the polishing composition at a concentration of about 1 ppm to about 250 ppm,
(e) a pH-adjusting agent wherein the pH-adjusting agent is triethanolamine, and
(e) an aqueous carrier,
wherein the pH of the polishing composition is about 1 to about 6.

13. The chemical-mechanical polishing composition of claim 12 , wherein the first abrasive particles are present in the polishing composition at a concentration of about 0.1 wt. % to about 0.5 wt. %.

14. The chemical-mechanical polishing composition of claim 12 , wherein the polishing composition further comprises second abrasive particles, and wherein the second abrasive particles are wet-process ceria particles, have a median particle size of about 1 nm to about 60 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %.

15. The chemical-mechanical polishing composition of claim 14 , wherein the first abrasive particles and the second abrasive particles, in total, are present in the polishing composition at a concentration of about 0.1 wt. % to about 0.5 wt. %.

16. The chemical-mechanical polishing composition of claim 12 , wherein the functionalized heterocycle comprises a functionalized nitrogen-containing heterocycle, and wherein the functionalized nitrogen-containing heterocycle is picolinic acid.

17. The chemical-mechanical polishing composition of claim 12 , wherein the functionalized heterocycle comprises a functionalized nitrogen-containing heterocycle, and wherein the functionalized nitrogen-containing heterocycle is quinaldic acid.

18. The chemical-mechanical polishing composition of claim 12 , wherein the cationic polymer is a cationic polyvinyl alcohol.

19. The chemical-mechanical polishing composition of claim 18 , wherein the cationic polyvinyl alcohol is present in the polishing composition at a concentration of about 1 ppm to about 40 ppm.

20. The chemical-mechanical polishing composition of claim 12 , wherein the pH of the polishing composition is about 3.5 to about 5.

21. A method of polishing a substrate comprising:
(i) providing a substrate;
(ii) providing a polishing pad;
(iii) providing the chemical-mechanical polishing composition of claim 1 ;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

22. A method of polishing a substrate comprising:
(i) providing a substrate;
(ii) providing a polishing pad;
(iii) providing the chemical-mechanical polishing composition of claim 12 ;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

23. A method of polishing a substrate comprising:
(i) providing a substrate, wherein the substrate comprises a silicon oxide layer;
(ii) providing a polishing pad;
(iii) providing a chemical-mechanical polishing composition compris

Assignees

• Cabot Microelectronics Corp

Inventors

• Reiss Brian
• Sauter Van Ness Dana
• Lam Viet
• Jia Renhe

Classifications

• H10P95/04

  Planarisation of conductive or resistive materials · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C23F1/14

  Aqueous compositions · CPC title