Photosensitive composition and photoresist
US-9170490-B2 · Oct 27, 2015 · US
US9758610B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9758610-B2 |
| Application number | US-201514974329-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 18, 2015 |
| Priority date | Dec 18, 2015 |
| Publication date | Sep 12, 2017 |
| Grant date | Sep 12, 2017 |
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An acid-labile hyperbranched copolymer is formed by copolymerizing monomers that include a difunctional monomer and a mono(meth)acrylate ester. The difunctional monomer includes at least one formal group, acetal group, or ketal group that makes the copolymer acid-labile. The copolymer is useful as a component of a photoresist composition that provides low line width roughness, among other desirable photolithographic properties.
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The invention claimed is: 1. An acid-labile hyperbranched copolymer, comprising the product of copolymerizing monomers comprising an acid-labile difunctional monomer having the structure wherein each occurrence of R 1 is independently hydrogen, fluoro, methyl, trifluoromethyl, or cyano; each occurrence of R 2 and R 3 is independently hydrogen, unsubstituted or substituted C 1-18 linear or branched alkyl, unsubstituted or substituted C 3-18 cycloalkyl, unsubstituted or substituted C 6-18 aryl, or unsubstituted or substituted C 3-18 heteroaryl, and R 2 and R 3 are not covalently linked, or covalently linked to each other to form a ring that includes —R 2 —C—R 3 —; each occurrence of L 1 , L 2 , and L 3 is independently unsubstituted or substituted C 1-8 -alkylene, unsubstituted or substituted —C(═O)—C 1-8 -alkylene, unsubstituted or substituted —C(═O)—(C 1-8 -alkylene)-C(═O)—, unsubstituted or substituted —(C 1-8 -alkylene)-O—(C 1-8 -alkylene)-, unsubstituted or substituted —C(═O)—(C 1-8 -alkylene)-O—(C 1-8 -alkylene)-, or unsubstituted or substituted —C(═O)—(C 1-8 -alkylene)-O—(C 1-8 -alkylene)-C(═O)—; each occurrence of X is independently 1,2-phenylene, 1,3-phenylene, 1,4-phenylene, or —C(═O)—O—wherein the carbonyl carbon is bound to the adjacent carbon atom that is itself bound to R 1 ; and x is 1, 2, or 3; and a mono(meth)acrylate ester comprising a base-solubility-enhancing mono(meth)acrylate ester, an acid-labile mono(meth)acrylate ester, a photoacid-generating mono(meth)acrylate ester, or a combination thereof to form a copolymer having a weight average molecular weight of 10,000 to 1,000,000 grams/mole; wherein the copolymerized monomers exclude styrene and substituted styrenes. 2. The copolymer of claim 1 , wherein each occurrence of L 1 , L 2 , and L 3 is independently C 2-4 -alkylene, and each occurrence of X is —C(═O)—O— wherein the carbonyl carbon is bound to the adjacent carbon atom that is itself bound to R 1 . 3. The copolymer of claim 1 , wherein each occurrence of R 2 and R 3 is independently hydrogen, methyl, or ethyl; or R 2 and R 3 are covalently linked to each other to form tetramethylene (—(CH 2 ) 4 —) or pentamethylene (—(CH 2 ) 5 —). 4. The copolymer of claim 1 , wherein x is 1. 5. The copolymer of claim 1 , wherein the acid-labile difunctional monomer has the structure wherein R 1 , R 2 , R 3 , and L are defined as in claim 1 . 6. The copolymer of claim 1 , wherein the monomers comprise 5 to 30 mole percent of the acid-labile difunctional monomer, 20 to 88 mole percent of the base-solubility-enhancing mono(meth)acrylate monomer, 5 to 50 mole percent of acid-labile mono(meth)acrylate monomer, and 2 to 20 mole percent of the photoacid-generating mono(meth)acrylate monomer. 7. An acid-labile hyperbranched copolymer, comprising the product of copolymerizing monomers comprising an acid-labile difunctional monomers selected from the group consisting of and combinations thereof; and a mono(meth)acrylate ester comprising a base-solubility-enhancing mono(meth)acrylate ester, an acid-labile mono(meth)acrylate ester, a photoacid-generating mono(meth)acrylate ester, or a combination thereof to form a copolymer. 8. A photoresist composition comprising the copolymer of claim 1 . 9. A method of forming an electronic device, comprising: (a) applying a layer of the photoresist composition of claim 8 on a substrate; (b) pattern-wise exposing the photoresist composition to activating radiation; and (c) developing the exposed photoresist composition layer to provide a resist relief image.
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