Inverted metamorphic multijunction solar cell with lightweight laminate substrate

Patent metadata

Field	Value
Publication number	US-9758261-B1
Application number	US-201514597566-A
Country	US
Kind code	B1
Filing date	Jan 15, 2015
Priority date	Jan 15, 2015
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

A method of manufacturing a solar cell assembly by providing a substrate; depositing on the substrate a sequence of layers of semiconductor material forming a solar cell; mounting a permanent laminate supporting member with a thickness of 50 microns or less on top of the sequence of layers; utilizing the laminate structure for supporting the epitaxial sequence of layers of semiconductor material forming a solar cell during the processes of removing the substrate and depositing and lithographically patterning a plurality of metal grid lines disposed on the top surface of the first solar subcell, and attaching a cover glass over at least the grid lines of the solar cell.

First claim

The invention claimed is:

1. A method of manufacturing a solar cell comprising:
providing a growth substrate;
depositing on the growth substrate an epitaxial sequence of layers of semiconductor material forming subcells of a multijunction solar cell,
depositing a laminate structure having a thickness of 50 microns or less including a bottom metal contact layer and a sequence of supporting layers separated by bonding layers over the sequence of layers of semiconductor material, wherein the laminate structure has a weight of less than 11.0 mg per square centimeter; and
removing the first substrate.

2. A method as defined in claim 1 , wherein the laminate structure is composed of an alternating sequence of a metal layer and a bonding layer.

3. A method as defined in claim 2 , wherein each of the metal layers in the laminate structure below the bottom metal contact layer are between 1.0 and 2.0 microns in thickness, and the each of the bonding layers in the laminate structure are between 2.0 and 10.0 microns in thickness.

4. A method as defined in claim 1 , wherein the bottom metal layer is composed of a sequence of metal layers including titanium, gold and silver applied by an evaporative deposition or sputtering process.

5. A method as defined in claim 1 , further comprising utilizing the laminate structure for supporting the epitaxial sequence of layers of semiconductor material forming a solar cell during subsequent processing steps including depositing and lithographically patterning a plurality of metal grid lines disposed on the top surface of the top solar subcell, and attaching a cover glass supporting member over the metal grid lines including a ceria glass having a thickness of about 4 mils.

6. A method as defined in claim 1 , wherein the laminate structure provides sufficient rigidity and support of the sequence of layers of semiconductor material forming a solar cell during the removal of the growth substrate by a process including grinding or lapping to remove over 80% of the thickness of the growth substrate, followed by an etching step to remove the remaining portion of the growth substrate.

7. A method as defined in claim 1 , wherein said step of depositing a sequence of layers of semiconductor material includes forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; forming a grading interlayer over said second subcell having a third band gap larger than said second band gap; forming a third solar subcell over said grading interlayer having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell, and the graded interlayer is compositionally graded to lattice match the second subcell on one side and the third subcell on the other side.

8. A method as defined in claim 7 , wherein the graded interlayer is composed of (In x Ga 1-x ) y Al 1-y As, with 0<x<1 and 0<y<1, and selected such that the band gap of the interlayer material remains constant throughout its thickness.

9. A method as defined in claim 7 , wherein the band gap of the interlayer material remains constant at a predetermined value in the range of 1.6 eV±3% throughout its thickness.

10. A method as defined in claim 1 , wherein said first substrate is composed of GaAs.

11. A method as defined in claim 7 , wherein said first solar subcell is composed of an InGa(Al)P emitter region and an InGa(Al)P base region.

12. A method as defined in claim 7 , wherein said second solar subcell is composed of an InGaP emitter region and a GaAs base region.

13. A method as defined in claim 7 , wherein said third solar subcell is composed of InGaAs.

14. A method of manufacturing a solar cell comprising:
providing a growth substrate;
depositing on the growth substrate an epitaxial sequence of layers of semiconductor material forming subcells of a multijunction solar cell,
depositing a laminate structure having a thickness of 50 microns or less including a bottom metal contact layer and a sequence of supporting layers separated by bonding layers over the sequence of layers of semiconductor material, wherein the laminate structure is composed of an alternating sequence of bonding layer and a carbon fiber layer deposited over the bottom metal contact layer; and
removing the first substrate.

15. A method of manufacturing a solar cell comprising:
providing a growth substrate;
depositing on the growth substrate an epitaxial sequence of layers of semiconductor material forming subcells of a multijunction solar cell,
depositing a laminate structure having a thickness of 50 microns or less including a bottom metal contact layer and a sequence of supporting layers separated by bonding layers over the sequence of layers of semiconductor material, wherein the laminate structure is composed of an alternating sequence of a metal layer and a bonding layer, wherein the metal layer in the laminate structure is composed of titanium and the bonding layer is a polyimide, and the thickness of each of the bonding layers is at least twice that of each of the metal layers in the laminate structure below the bottom metal contact layer, and wherein each of the metal layers in the laminate structure below the bottom metal contact layer are between 1.0 and 2.0 microns in thickness, and the each of the bonding layers in the laminate structure are between 2.0 and 10.0 microns in thickness; and
removing the first substrate.

16. A method of manufacturing a solar cell assembly comprising:
providing a growth substrate;
depositing on the growth substrate using an MOCVD process a sequence of layers of semiconductor material forming a solar cell, including forming a first solar subcell having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; forming a grading interlayer over said second subcell having a third band gap larger than said second band gap and is compositionally graded to lattice match the middle subcell on one side and the bottom subcell on the other side, is composed of (In x Ga 1-x ) y Al 1-y As with 0<x<1 and 0<y<1, and selected such that the band gap of the interlayer material remains constant throughout its thickness; and forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell;
mounting a supporting member on top of the sequence of layers including a bottom metal contact layer and a laminate structure directly adjacent to the contact layer and having a thickness in the range of 30 to 60 microns or less and a weight of less than 11.0 mg per square centimeter;
removing the growth substrate;
utilizing the laminate structure for supporting the epitaxial sequence of layers of semiconductor material forming a solar cell during subsequent processing steps including depositing and lithographically patterning a plurality of metal grid lines disposed on the top surface of the first solar subcell, including at least one metal contact pad electrically connected to said grid lines and disposed adjacent to a first peripheral edge of said first solar subcell;
providing a metal interconnection member with a first end portion;
bonding the metal interconnection member to the first terminal; and
attaching a glass supporting member over at least the grid lines of the first solar subcell.

17. A method as defined in claim 16 , further comprisi

Assignees

• Solaero Tech Corp

Inventors

• Steinfeldt Jeffrey

Classifications

• C23C16/301

  AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi · CPC title

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• B64G1/443 Primary

  Photovoltaic cell arrays · CPC title

• H01L31/1844

  Electricity · mapped topic

• H01L31/041

  Electricity · mapped topic