Supply voltage modular photodiode bias

Patent metadata

Field	Value
Publication number	US-9755760-B2
Application number	US-201514875228-A
Country	US
Kind code	B2
Filing date	Oct 5, 2015
Priority date	Oct 5, 2015
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

An optical communication system, circuit, and Integrated Circuit (IC) chip are disclosed. The disclosed optical communication system includes a photodiode configured to receive light energy and convert the light energy into an electrical signal, an amplifier configured to receive the electrical signal from the photodiode and output an amplified electrical signal, and a control circuit comprising a biasing network that generates a modular logic level that scales with a bias voltage of the photodiode.

First claim

What is claimed is:

1. An optical communication system, comprising:
a photodiode configured to receive light energy and convert the light energy into an electrical signal;
an amplifier configured to receive the electrical signal from the photodiode and output an amplified electrical signal, wherein the amplifier is driven by a supply voltage Vcc; and
a control circuit comprising a biasing network having a plurality of switching elements connected in series between a photodiode biasing supply voltage Vpd and a bias resistor that is connected to a common reference voltage or ground, wherein the supply voltage Vcc is less than the photodiode biasing supply voltage Vpd, wherein the amplifier is also connected to the common reference voltage or ground, and wherein the biasing network provides a balanced high frequency ground path between the photodiode and the amplifier.

2. The optical communication system of claim 1 , wherein the photodiode comprises a P-I-N diode.

3. The optical communication system of claim 1 , wherein plurality of switching elements comprise at least four switching elements.

4. The optical communication system of claim 1 , wherein the plurality of switching elements comprise a plurality of Bipolar Junction Transistors (BJTs) connected in series between the bias resistor and the photodiode biasing supply voltage Vpd.

5. The optical communication system of claim 4 , wherein the plurality of BJTs are connected to a filter transistor that is part of a filter circuit for the amplifier.

6. The optical communication system of claim 5 , wherein the filter transistor comprises a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and wherein the plurality BJTs control a bias voltage provided to the MOSFET.

7. The optical communication system of claim 5 , wherein the filter circuit further comprises a filter resistor and a filter capacitor that bias the photodiode to maintain the balanced high frequency ground path between the photodiode and the amplifier.

8. The optical communication system of claim 5 , wherein the plurality of BJTs are connected to the filter transistor across a logic gate.

9. The optical communication system of claim 8 , wherein the logic gate comprises a NAND gate.

10. The optical communication system of claim 5 , wherein the filter circuit, the amplifier, and the control circuit are provided on a common Integrated Circuit (IC) chip.

11. A circuit, comprising:
a photodiode that receives optical signals and produces electrical signals in response thereto, wherein the photodiode is driven by an external supply voltage Vpd;
a trans-impedance amplifier that receives the electrical signals produced by the photodiode, wherein the trans-impedance amplifier is driven by a supply voltage Vcc that is less than the external supply voltage Vpd; and
a filter circuit that biases the photodiode to provide a balanced high frequency ground path between the photodiode and the trans-impedance amplifier, wherein the filter circuit receives a biasing voltage from a control circuit that shares a common reference or ground voltage with the trans-impedance amplifier, wherein the control circuit comprises a plurality of switching elements connected in series between the external supply voltage Vpd and a bias resistor, wherein the bias resistor is connected to the common reference or ground voltage, and wherein the control circuit is driven by the external supply voltage Vpd.

12. The circuit of claim 11 , wherein the plurality of switching elements comprises at least four switching elements.

13. The circuit of claim 11 , wherein the plurality of switching elements comprise a plurality of Bipolar Junction Transistors (BJTs) connected in series between the bias resistor and the external supply voltage Vpd.

14. The circuit of claim 13 , wherein the plurality of BJTs are connected to a transistor that is part of the filter circuit for the amplifier.

15. The circuit of claim 14 , wherein the plurality BJTs control the biasing voltage provided to the transistor.

16. The circuit of claim 15 , wherein the plurality of BJTs are connected to the transistor across a logic gate.

17. The circuit of claim 11 , wherein the filter circuit further comprises a filter resistor and a filter capacitor.

18. An Integrated Circuit (IC) chip, comprising:
a trans-impedance amplifier configured to receive an input electrical signal from a photodiode and provide an amplified version of the input electrical signal as an output, wherein the trans-impedance amplifier is driven by a supply voltage Vcc, wherein the photodiode is driven by an external supply voltage Vpd, and wherein the external supply voltage Vpd is greater than the supply voltage Vcc;
a control circuit that controls a bias voltage of the photodiode when the IC chip is connected to the photodiode, that is also driven by the external supply voltage Vpd, and that shares a common reference or ground voltage with the trans-impedance amplifier, wherein the control circuit comprises a plurality of switching elements connected in series between the external supply voltage Vpd and a bias resistor, and wherein the bias resistor is connected to the common reference or ground voltage; and
a filter circuit that biases the photodiode to ensure a balanced high frequency ground path between the photodiode and the trans-impedance amplifier.

19. The IC chip of claim 18 , wherein the filter circuit receives a biasing voltage from the control circuit, wherein the plurality of switching elements comprise a plurality of Bipolar Junction Transistors (BJTs) connected in series between the bias resistor and the external supply voltage Vpd.

20. The IC chip of claim 19 , wherein the plurality of BJTs are connected to a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that is part of the filter circuit for the amplifier and wherein the plurality of BJTs are connected to the MOSFET via a logic gate that is responsive to an output of the plurality of switching elements.

Assignees

• Avago Technologies General Ip

Inventors

• Asmanis Georgios
• Chaahoub Faouzi
• Robinson Michael A

Classifications

• H03K17/60

  the devices being bipolar transistors (bipolar transistors having four or more electrodes H03K17/72) · CPC title

• H03K17/6877

  the control circuit comprising active elements different from those used in the output circuit · CPC title

• H03F3/087

  with IC amplifier blocks (H03F3/085 takes precedence) · CPC title

• H01L27/08

  Electricity · mapped topic

• H04B10/616 Primary

  Details of the electronic signal processing in coherent optical receivers · CPC title