Method for producing a plurality of optoelectronic components and optoelectronic component

Patent metadata

Field	Value
Publication number	US-9755114-B2
Application number	US-201314763157-A
Country	US
Kind code	B2
Filing date	Dec 12, 2013
Priority date	Jan 24, 2013
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

The invention relates to a method for producing a plurality of optoelectronic components, comprising the following steps: —providing an auxiliary support wafer ( 1 ) having contact structures ( 4 ), wherein the auxiliary support wafer comprises glass, sapphire, or a semiconductor material, —applying a plurality of radiation-emitting semiconductor bodies ( 5 ) to the contact structures ( 4 ), —encapsulating an least the contact structures ( 4 ) with a potting mass ( 10 ), and —removing the auxiliary support wafer ( 1 ). The invention further relates to an optoelectronic component.

First claim

The invention claimed is:

1. A method for producing a plurality of optoelectronic components having the following steps:
providing an auxiliary carrier wafer having contact structures;
applying a plurality of radiation-emitting semiconductor bodies to the contact structures;
encapsulating the contact structures with a mechanically stabilizing material which terminates flush with a surface of the contact structures, the mechanically stabilizing material being a housing material;
applying a potting mass to the surface, which is formed by the contact structures and the mechanically stabilizing material, such that the potting mass terminates flush with a front side of the semiconductor bodies; and
removing the auxiliary carrier wafer.

2. The method according to claim 1 , wherein the contact structures have a first metallic layer and a second metallic layer, wherein the second metallic layer is galvanically deposited on the first metallic layer.

3. The method according to claim 2 , wherein the second metallic layer has lateral flanks having an undercut.

4. The method according to claim 1 , wherein the potting mass is reflective and/or wavelength-converting.

5. The method according to claim 1 , wherein the potting mass is applied using one of the following methods: casting, dispensing, jetting, molding.

6. The method according to claim 1 , wherein the auxiliary carrier wafer is removed by one of the following methods: laser liftoff, etching, grinding.

7. The method according to claim 1 , wherein a wavelength-converting layer is arranged in a light path of the semiconductor bodies.

8. The method according to claim 1 , wherein an optical element is arranged in the light path of each semiconductor body.

9. The method according to claim 8 , wherein the optical elements are molded above the semiconductor bodies.

10. The method according to claim 1 , wherein the semiconductor bodies are implemented as flip-chips.

11. The method according to claim 1 , wherein the semiconductor bodies have an electrical contact or at least two electrical contacts on their front side.

12. The method according to claim 1 , wherein an upper edge of the potting mass extends up to an upper edge of the semiconductor bodies.

13. The method according to claim 1 , wherein each later component has a plurality of semiconductor bodies.

14. An optoelectronic component, which is produced using a method according to claim 1 .

15. A method for producing a plurality of optoelectronic components having the following steps:
providing an auxiliary carrier wafer having contact structures;
applying a plurality of radiation-emitting semiconductor bodies to the contact structures;
encapsulating the contact structures with a mechanically stabilizing material which terminates flush with a surface of the contact structures, the mechanically stabilizing material being a housing material;
applying a reflective potting mass to the surface, which is formed by the contact structures and the mechanically stabilizing material, such that the potting mass terminates flush with a front side of the semiconductor bodies; and
removing the auxiliary carrier wafer.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Albrecht Tony
• Schlereth Thomas
• Schneider Albert

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W74/127

  characterised by arrangements for sealing or adhesion · CPC title