Semiconductor transistor device and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9754828-B1
Application number	US-201615200000-A
Country	US
Kind code	B1
Filing date	Jul 1, 2016
Priority date	Jun 13, 2016
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

A semiconductor transistor device includes a substrate having an active area and a trench isolation region surrounding the active area, a gate oxide layer, a gate, a spacer on a sidewall of the gate, a doping region on one side of the gate, an insulating cap layer covering the gate, the spacer and the doping region, and a redistributed contact layer (RCL) on the insulating cap layer. The RCL extends from the active area to the trench isolation region. A contact plug is disposed above the trench isolation region and is electrically connected to the gate or the doping region through the RCL.

First claim

What is claimed is:

1. A semiconductor transistor device, comprising:
a semiconductor substrate having an active area and a trench isolation region surrounding the active area;
a gate oxide layer disposed on the active area;
a gate disposed on the gate oxide layer;
a spacer disposed on a sidewall of the gate;
a source doping region disposed in the active area on one side of the gate;
a drain doping region disposed in the active area on the other side of the gate;
an insulating cap layer covering the gate, the spacer, the source doping region and the drain doping region;
a redistributed contact layer (RCL) on the insulating cap layer, wherein the RCL is in direct contact with at least one of the gate, the source doping region and the drain doping region, and extends from the active area to the trench isolation region; and
a contact plug directly disposed on the RCL vertically above the trench isolation region and is electrically connected to at least one of the gate, the source doping region and the drain doping region through the RCL.

2. The semiconductor transistor device according to claim 1 , wherein the insulating cap layer is in direct contact with the spacer.

3. The semiconductor transistor device according to claim 2 , wherein the insulating cap layer comprises SiOx, SiN or SiON.

4. The semiconductor transistor device according to claim 1 , wherein the RCL comprises metal or metal silicide.

5. The semiconductor transistor device according to claim 1 , wherein the RCL comprises Ti, TiN, W, SiNix, SiCox, SiTix or SiWx.

6. The semiconductor transistor device according to claim 1 , wherein the insulating cap layer comprises an opening disposed on the gate, the source doping region, or the drain doping region, wherein the RCL fills into the opening.

7. The semiconductor transistor device according to claim 1 further comprising a contact etch stop layer (CESL) covering the RCL and the insulating cap layer.

8. The semiconductor transistor device according to claim 7 , wherein the CESL comprises silicon nitride.

9. The semiconductor transistor device according to claim 7 further comprising an inter-layer dielectric (ILD) layer covering the CESL.

10. The semiconductor transistor device according to claim 9 , wherein the contact plug penetrates through the ILD layer and the CESL and is electrically connected to the RCL.

11. The semiconductor transistor device according to claim 1 , wherein the RCL electrically connects the gate with one of the source doping region and the drain doping region.

12. The semiconductor transistor device according to claim 1 , wherein the RCL traverses another gate.

Assignees

• United Microelectronics Corp

Inventors

• Zhou Zhibiao
• Chen Ding-Lung
• Zhang Xing Hua

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10W20/40

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H10W72/00

  Interconnections or connectors in packages · CPC title