Completely utilizing hamming distance for SECDED based ECC DIMMs

Patent metadata

Field	Value
Publication number	US-9754684-B2
Application number	US-201514640005-A
Country	US
Kind code	B2
Filing date	Mar 5, 2015
Priority date	Nov 6, 2014
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

In an Error Correction Code (ECC)-based memory, a Single Error Correction Double Error Detection (SECDED) scheme is used with data aggregation to correct more than one error in a memory word received in a memory burst. By completely utilizing the Hamming distance of the SECDED (128,120) code, 8 ECC bits can potentially correct one error in 120 data bits. Each memory burst is effectively “expanded” from its actual 64 data bits to 120 data bits by “sharing” additional 56 data bits from all of the other related bursts. When a cache line of 512 bits is read, the SECDED (128,120) code is used in conjunction with all the received 64 ECC bits to correct more than one error in the actual 64 bits of data in a memory word. The data mapping of the present disclosure translates to a higher rate of error correction than the existing (72,64) SECDED code.

First claim

What is claimed is:

1. A method comprising:
receiving a burst-specific content from each burst in a plurality of bursts from a memory module, wherein the burst-specific content includes a first pre-determined number of bits of burst-specific data along with corresponding bits of burst-specific Error Correcting Code (ECC), and wherein the first pre-determined number of bits and corresponding burst-specific ECC bits are received substantially simultaneously in a single transfer within a group of successive transfers from the memory module;
storing the burst-specific content from each burst in the plurality of bursts; and
using all received ECC bits from the plurality of bursts as part of a Single Error Correction Double Error Detection (SECDED) code to correct more than one error in the first pre-determined number of bits of burst-specific data from at least one of the plurality of bursts, wherein using all received ECC bits as part of the SECDED code includes:
for each burst in the plurality of bursts, selecting a burst-specific second pre-determined number of bits of data from all other bursts in the plurality of bursts, and
for each burst in the plurality of bursts, applying the corresponding bits of burst-specific ECC to the corresponding first pre-determined number of bits of burst-specific data as well as to the burst-specific second pre-determined number of bits of data.

2. The method of claim 1 , wherein the SECDED code is a SECDED (128,120) code.

3. The method of claim 1 , wherein the corresponding bits of burst-specific ECC include 8 bits of burst-specific ECC,
and wherein a total of the first pre-determined number of bits and the second pre-determined number of bits is at least 120.

4. The method of claim 3 , wherein selecting the burst-specific second pre-determined number of bits of data includes:
for each burst in the plurality of bursts, selecting an identical number of bits from the burst-specific data associated with each of the other bursts to generate the second pre-determined number of bits of data.

5. The method of claim 1 , wherein the plurality of bursts is eight bursts.

6. The method of claim 1 , wherein the first pre-determined number of bits is 64 bits.

7. The method of claim 1 , wherein the memory module is an ECC Dual In-line Memory Module (ECC-DIMM).

8. The method of claim 1 , further comprising:
receiving a data content to be stored in the memory module through a plurality of successive memory accesses;
dividing the data content into a plurality of access-specific data, wherein each access-specific data contains the first pre-determined number of bits;
for each access-specific data, selecting an additional third pre-determined number of bits of data from all other access-specific data in the plurality of access-specific data, wherein a total of the first pre-determined number of bits and the third pre-determined number of bits is at least 120;
for each memory access, applying the SECDED code to a combination of the access-specific data and associated additional third pre-determined number of bits of data to determine access-specific 8 bits of ECC; and
during each successive memory access, storing the access-specific data along with the access-specific 8 bits of ECC in the memory module.

9. The method of claim 8 , wherein the plurality of successive memory accesses is eight accesses.

10. The method of claim 8 , wherein selecting the additional third pre-determined number of bits of data includes:
for each access-specific data, selecting an identical number of bits from each of the other access-specific data to generate the additional third pre-determined number of bits of data.

11. A memory controller comprising:
a control unit;
a buffer coupled to the control unit, wherein the buffer is operative by the control unit to:
receive a burst-specific content from each burst in a plurality of bursts from a memory module, wherein the burst-specific content includes a pre-determined number of bits of burst-specific data along with corresponding bits of burst-specific Error Correcting Code (ECC), and wherein the pre-determined number of bits and corresponding burst-specific ECC bits are received substantially simultaneously in a single transfer within a group of successive transfers from the memory module, and
store the burst-specific content from each burst in the plurality of bursts; and

a decoder unit coupled to the buffer and the control unit, wherein the decoder unit is operative by the control unit to:
use all received ECC bits from the plurality of bursts as part of a Single Error Correction Double Error Detection (SECDED) (128,120) code to correct more than one error in the pre-determined number of bits of burst-specific data from at least one of the plurality of bursts,

wherein, for each burst in the plurality of bursts, the control unit is operative to:
select an identical number of bits from the burst-specific data associated with each of the other bursts to generate a burst-specific additional bits of data, wherein a total of the pre-determined number of bits and the burst-specific additional bits is at least 120, and

wherein, for each burst in the plurality of bursts, the decoder is further operative by the control unit to:
apply the burst-specific ECC bits to the corresponding pre-determined number of bits of burst-specific data as well as to the burst-specific additional bits of data.

12. The memory controller of claim 11 , wherein the corresponding bits of burst-specific ECC include 8 bits of burst-specific ECC, and wherein the burst-specific additional bits of data include 56 bits of additional data for each burst in the plurality of bursts.

13. The memory controller of claim 11 , wherein the pre-determined number of bits is 64 bits.

14. The memory controller of claim 11 , wherein the memory module is an ECC Dual In-line Memory Module (ECC-DIMM).

15. The memory controller of claim 11 , wherein the memory controller further comprises:
an encoder unit coupled to the buffer and the control unit,
wherein the buffer is further operative by the control unit to:
receive a data content to be stored in the memory module through a plurality of successive memory accesses,

wherein the control unit is further operative to:
divide the data content into a plurality of access-specific data, wherein each access-specific data contains the pre-determined number of bits, and
for each access-specific data, select an identical number of bits from each of the other access-specific data to generate an additional 56 bits of data, wherein a total of the pre-determined number of bits and the additional 56 bits is at least 120,

wherein, for each memory access, the encoder unit is operative by the control unit to:
apply the SECDED (128,120) code to a combination of the access-specific data and the associated additional 56 bits of data to determine access-specific 8 bits of ECC,

wherein, during each successive memory access, the control unit is further operative to:
store the access-specific data along with the access-specific 8 bits of ECC in the memory module.

16. The memory controller of claim 15 , wherein the plurality of bursts is eight bursts, and wherein the plurality of successive memory accesses is eight accesses.

17. A system comprising:
a memory module configured to store electronic content; and
a processor coupled to the memory module and configured to perform a memory read operation on the memory module,
wherein, as part of the memory read operation, the processor is operative to perform the following:

Assignees

• Samsung Electronics Co Ltd

Inventors

• Hu Chaohong
• Zheng Hongzhong
• Nair Prashant Jayaprakash

Classifications

• G11C2029/0411

  Online error correction · CPC title

• G06F11/1048

  using arrangements adapted for a specific error detection or correction feature · CPC title

• H03M13/19 Primary

  Single error correction without using particular properties of the cyclic codes, e.g. Hamming codes, extended or generalised Hamming codes · CPC title

• G11C29/52 Primary

  Protection of memory contents; Detection of errors in memory contents · CPC title