Method of producing a data storage medium
US-2016064014-A1 · Mar 3, 2016 · US
US9754609B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9754609-B2 |
| Application number | US-201514840087-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2015 |
| Priority date | Mar 31, 2006 |
| Publication date | Sep 5, 2017 |
| Grant date | Sep 5, 2017 |
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The present invention relates a method of producing a data storage medium comprising the steps of: a) coating a layer comprising a polymer material onto at least a part of a template surface thereby to obtain a modified template surface; b) clamping the modified template surface produced in step (a) with a target surface thereby to obtain an assembly; and c) introducing a liquid to an environment of the assembly obtained in step (b) thereby to transfer the layer comprising the polymer material of the modified template surface onto at least an adjacent region on the target surface.
Opening claim text (preview).
The invention claimed is: 1. A method for producing a data storage medium comprising: (a) coating a polymer material directly onto at least a part of a template surface so as to form a polymer layer, wherein the polymer layer and the template surface form a modified template surface, wherein the polymer material comprises a polystyrene-r-benzocyclobutene random copolymer and wherein the polymer layer comprises a thickness of 100 nm, wherein the polymer layer of the data storage medium has a root mean square (RMS) surface roughness of less than 0.2 nm when measured in a 0.1 m 2 target area; (b) clamping the modified template surface produced in step (a) with a target surface so as to form an assembly; and (c) introducing a liquid to an environment of the assembly formed in step (b) so as to cause the polymer layer to separate from the template and remain on at least an adjacent region of the target surface; wherein the data storage medium comprises indentation marks having a pitch of 24 nm and a depth of 2 nm such that the data storage medium has a storage density of 1.4 Terabit/square inch and an overall signal-to-noise ratio (SNR) of 8 dB, wherein the data storage medium comprises a pixel to pixel distance of 4 nm, and wherein the data storage medium exhibits an amplitude of the power spectrum of 180 at a period of 0.02/nm.
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