Deformation pattern recognition method, pattern transferring method, processing device monitoring method, and lithographic apparatus

Patent metadata

Field	Value
Publication number	US-9753377-B2
Application number	US-201314420311-A
Country	US
Kind code	B2
Filing date	Jun 27, 2013
Priority date	Aug 29, 2012
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

First claim

What is claimed is:

1. A deformation pattern recognition method comprising:
a) providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by one or more processing devices when said substrate is processed by said one or more processing devices;
b) transferring a first pattern to a substrate, said first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position in the first pattern;
c) processing the substrate by said one or more processing devices;
d) measuring a position of the N alignment marks and determining an alignment mark displacement for each of the N alignment marks from the respective nominal position by comparing the respective nominal position of an alignment mark with the respective measured position of said alignment mark;
e) fitting at least one of the one or more deformation patterns to the measured alignment mark displacements;
f) determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit;
g) using the determined accuracy value, determining whether an associated deformation pattern is present in the measured alignment mark displacements.

2. A deformation pattern recognition method according to claim 1 , wherein determining whether a deformation pattern is present in the measured alignment mark displacements comprises determining whether the associated accuracy value is above or below a predefined threshold.

3. A deformation pattern recognition method according to claim 1 , wherein the one or more deformation patterns are provided in the form of a set of pattern displacements associated with the N alignment marks, and wherein fitting a deformation pattern to the measured alignment mark displacements includes comparing the respective set of pattern displacements with the measured alignment mark displacements.

4. A deformation pattern recognition method according to claim 1 , wherein the one or more deformation patterns are provided in the form of a set of parameter values of a first model, and wherein fitting a deformation pattern to the measured alignment mark displacements includes:
fitting the first model to the measured alignment mark displacements to obtain parameter values corresponding to the measured alignment mark displacements; and
comparing the obtained parameter values corresponding to the measured alignment mark displacements with the set of parameter values of the respective deformation pattern.

5. A deformation pattern recognition method according to claim 1 , wherein the at least one deformation pattern is fitted in magnitude to the measured alignment mark displacements.

6. A deformation pattern recognition method according to claim 1 , wherein the at least one deformation pattern is fitted in orientation to the measured alignment mark displacements.

7. A deformation pattern recognition method according to claim 1 , wherein at least two deformation patterns are provided, wherein the at least two deformation patterns comprise a first subset of deformation patterns including a characteristic pattern feature and a second subset of deformation patterns lacking the characteristic pattern feature, wherein prior to e) the method comprises determining whether the measured alignment mark deformations comprise the characteristic pattern feature or not, wherein only the deformation patterns of the first subset are used in f) when the characteristic pattern feature is present, and wherein only the deformation patterns of the second subset are used in f) when the characteristic pattern feature is absent.

8. A pattern transferring method comprising:
1) providing a correction recipe for each of the one or more deformation patterns, each correction recipe prescribing how a pattern has to be transferred to a substrate deformed in accordance with the associated deformation pattern in order to compensate for the deformation of the substrate;
2) carrying out the method steps of the deformation pattern recognition method according to claim 1 to determine which of the one or more deformation patterns are present in the measured alignment mark displacements;
3) transferring a second pattern to the substrate using the correction recipes of the fitted deformation patterns that are present in the measured alignment mark displacements in order to align the second pattern with respect to the first pattern.

9. A pattern transferring method according to claim 8 , wherein a correction recipe for an associated deformation pattern is determined by carrying out:
4) subjecting one or more substrates including the first pattern to the associated deformation pattern;
5) transferring the second pattern to the one or more substrates using different correction recipes; and
6) choosing the correction recipe that results in minimal overlay errors between the first and second pattern.

10. A pattern transferring method according to claim 9 , wherein the correction recipe is varied until the correction recipe is found that results in minimal overlay errors between the first and second pattern.

11. A processing device monitoring method comprising:
1) carrying out the method steps of the deformation pattern recognition method according to claim 1 to determine which of the one or more deformation patterns is present in the measured alignment mark displacements; and
2) using the obtained accuracy values of the fitted deformation patterns in order to determine whether the corresponding one or more processing devices were used during processing of the substrate and/or were malfunctioning during processing of the substrate.

12. A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, the apparatus comprising:
a substrate table constructed to hold a substrate;
an alignment sensor configured to measure the positions of alignment marks on the substrate relative to a reference;
a control unit configured to control the transfer onto the substrate by reference to the positions of the alignment marks on the substrate measured by said alignment sensor;
wherein the control unit comprises a storage medium configured to store at least one deformation pattern which is representative of a deformation of a substrate that may be caused by a processing device when said substrate is processed by said processing device, and wherein the control unit is configured:
to control the lithographic apparatus in order to transfer a first pattern to a substrate,
said first pattern including at least N alignment marks,
to receive data from the alignment sensor representative for a position of the N alignment marks in order to determine an alignment mark displacement for each of the N alignment marks from the respective nominal position by comparing the respective nominal position of an alignment mark with the respective measured position of said alignment mark, each alignment mark displacement being representative of a respective local deformation of the substrate resulting from the processing of the substrate,
to fit the at least one deformation pattern to the measured alignment mark displacements,
to determine an accuracy value for each fitted deformation pattern, each accuracy value being representative for the accuracy of the corresponding fit, and
to use the obtained accuracy values in order to determine whether an associated deformation pattern is present in the measured alignment mark displacements.

13. A lithographic apparatus according to claim 12 , wherein the control unit comprises a st

Assignees

• Asml Netherlands Bv

Inventors

• Cekli Hakki Ergun
• Lyulina Irina
• Tenner Manfred Gawein
• Van Haren Richard Johannes Franciscus
• Van Der Sanden Stefan Cornelis Theodorus

Classifications

• G03F9/7019

  Calibration · CPC title

• G03F7/70633 Primary

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G03F7/70483

  Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring · CPC title

• G03F7/70616

  Monitoring the printed patterns · CPC title

• G03F7/70258 Primary

  Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system · CPC title